高功率电子器件产热传热特性的理论研究
发布时间：2018-10-15 10:34
【摘要】：晶体管是大规模集成电路的核心器件,在雷达、通信卫星中继器及各种无线装置中广泛使用,近年来其发展趋势呈现出特征尺寸逐步减小与功率大幅提高的特点,导致其局部热流密度极具上升(达到200W/cm2以上).如果未采取有效的冷却措施,将导致器件内部温度迅速增高,温度梯度增大,甚至达到或超过其正常工作温度,高温下降加速电极的劣化,大大降低电子元器件的使用寿命。因此,器件热管理技术对于保障晶体管等高功率电子器件的正常工作至关重要。研究电子器件的产热与传热特性,掌握其不同工作状态的温度分布特征,是建立高功率电子器件热管理技术的前提。本文的主要工作包括：1高热流密度微/纳尺度电子器件热电模型建立随着半导体器件特征尺寸的减小以及功率的增加,器件内部热流密度急剧增加,此时器件的特征尺寸与器件内部热载子的平均自由程相当,运用传统的方法研究时,将产生较大的误差,此时应该从器件的产热机理出发,从微观或介观尺度描述电子、声子的迁移过程和电子、声子间的散射作用,研究器件内部的产热与传热过程。本文首先运用格子-Boltzmann方法,建立了微/纳尺度的场效应晶体管的产热与传热模型,该模型中考虑了电子与声子的耦合过程,在声子方程中加入了由外加电场产生源项,分析不同工作状况下器件内部的温度分布,此外改变热管理方式时,例如增加上、下边界对流换热系数,计算不同热管理方式时,器件内部的温度分布,为热设计提供一定的理论依据。其次,本文建立了非能量平衡微/纳尺晶体管产热传热模型。在运用格子-Boltzmann建立的传热模型中,忽略了声子的分类。声子根据频率的不同分为光学声子和声学声子,光学声子的群速度较小趋近于0,声学声子的群速度较大,因此声学声子是器件中传热的主要载子,因此为了提高计算的准确度,运用非能量平衡方法,考虑晶体管中电子、光学声子、声学声子的相互作用,计算晶体管内部的热电特性,包括电场强度、电势、温度以及焦耳热分布等。2双指器件热电特性的模拟对于电子器件而言,其结构呈现出周期性的特征。在之前的文献中大多是以单指器件为一个结构单元,而在实际的结构中,其最小结构单元多是双指器件。二者最大的差别在于源极、栅极以及漏极的位置分布不同。而在器件中,电极分布的位置对电场强度分布有着至关重要的影响,而电场强度的分布又决定了器件内部的温度分布以及焦耳热分布。因此以双指器件为最小结构单元更符合实际情况,计算更准确3器件温度影响因素分析在微／纳尺度半导体器件中,其产热机理可以简单描述为：在外加的高电场作用下,电子获得了极高的能量,随后高能电子将能量传递给声子,在通过声子的运动将能量传播开来。在实际的过程中,其温度分布受到了多种因素的影响。以双指器件为例,首先,外加电压的不同,会引起器件内部温度分布的差异。其次,掺杂浓度对于半导体器件而言,也是一个重要的影响因素,最高温度随着掺杂浓度的增加而升高。第三,热管理方式的不同,对内部温度分布以及焦耳热分布产生的影响有所不同。因此,本文研究了上、下对流换热系数、衬底温度、漏极电压以及掺杂浓度对器件的热电特性的影响,分析不同参数对器件的影响,找到维持器件正常工作条件下的参数,对热设计工作者提供一定理论依据。
[Abstract]:The transistor is a core device of large-scale integrated circuit and is widely used in radar, communication satellite relay and various wireless devices, resulting in a very high local heat flow density (up to 200W/ cm2). if the effective cooling measures are not adopted, the internal temperature of the device is rapidly increased, the temperature gradient is increased, even the normal working temperature is reached or exceeded, the degradation of the accelerated electrode at the high temperature is reduced, and the service life of the electronic component is greatly reduced. As a result, device thermal management techniques are critical to normal operation of high power electronics, such as transistors. The thermal and heat transfer characteristics of electronic devices are studied, and the temperature distribution characteristics of different working states are mastered, which is the premise of establishing the thermal management technology of high-power electronic devices. the main work of this paper includes: 1 high heat flux density micro/ nano-scale electronic device thermoelectric model builds up with the reduction of the feature size of the semiconductor device and the increase of power, the heat flow density of the device increases sharply, At this time, the feature size of the device is equivalent to the average free path of the thermal carrier in the device, and when the traditional method is applied, a larger error will be generated. At this time, the migration process and the electrons of the electrons and the acoustic sub-carriers should be described from the micro or meso scale according to the thermal mechanism of the device. The heat and heat transfer process inside the device is studied by the scattering effect between the acoustic photons. In this paper, the thermal and heat transfer model of a field effect transistor with micro/ nano scale is established by using the lattice Boltzmann method. In this model, the coupling process of the electron and the phonon is taken into account, and the source term generated by the applied electric field is added into the acoustic sub-equation. The temperature distribution inside the device under different working conditions is analyzed. In addition, when the thermal management mode is changed, for example, the convection heat transfer coefficient of upper and lower boundary is increased, the temperature distribution inside the device is calculated when different thermal management modes are calculated, and a certain theoretical basis is provided for the thermal design. Secondly, the heat transfer model of non-energy balance micro/ nano-scale transistor is established in this paper. In the heat transfer model established by lattice-Boltzmann, the classification of acoustic sub-particles is neglected. The acoustic phonon is divided into optical phonon and acoustic phonon according to the frequency, the group velocity of the optical phonon is small approaching to 0, the group velocity of the acoustic phonon is larger, so the acoustic phonon is the main carrier of heat transfer in the device, therefore, in order to improve the accuracy of calculation, the non-energy balance method is applied, considering the interaction of the electrons, the optical phonon, the acoustic phonon in the transistor, the thermoelectric characteristics inside the transistor are calculated, including the electric field strength, the electric potential, the temperature, and the jjjj thermal distribution, etc. The simulation of the thermoelectric characteristics of the two-finger device is for the electronic device, the structure of which exhibits periodic characteristics. Most of the previous literatures are single-finger devices as one structural unit, while in the actual structure, the smallest structural unit is a double-finger device. The difference between the source, the grid and the drain is different. In the device, the position of the electrode distribution plays an important role in the intensity distribution of the electric field, and the distribution of the electric field intensity also determines the temperature distribution inside the device and the Joule heat distribution. in that micro/ nano-scale semiconductor device, the heat mechanism of the micro/ nano-scale semiconductor device can be simply described as follows: under the action of the applied high electric field, the electrons obtain extremely high energy, The energetic electrons then pass energy to the phonon and propagate energy through the motion of the phonon. In the actual process, the temperature distribution is influenced by many factors. In the case of double-finger device, the difference of temperature distribution inside the device is caused by the difference of applied voltage. Second, the doping concentration is also an important influencing factor for the semiconductor device, and the highest temperature increases as the doping concentration increases. Third, the heat management mode is different, and the influence on internal temperature distribution and Joule heat distribution is different. Therefore, the influence of different parameters on the thermoelectric properties of the device under the influence of different parameters on the thermoelectric properties of the device is studied, and the parameters under normal operating conditions of the device are found. and provides a theoretical basis for the thermal design workers.
【学位授予单位】：南京理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN32
本文编号：2272272
[Abstract]:The transistor is a core device of large-scale integrated circuit and is widely used in radar, communication satellite relay and various wireless devices, resulting in a very high local heat flow density (up to 200W/ cm2). if the effective cooling measures are not adopted, the internal temperature of the device is rapidly increased, the temperature gradient is increased, even the normal working temperature is reached or exceeded, the degradation of the accelerated electrode at the high temperature is reduced, and the service life of the electronic component is greatly reduced. As a result, device thermal management techniques are critical to normal operation of high power electronics, such as transistors. The thermal and heat transfer characteristics of electronic devices are studied, and the temperature distribution characteristics of different working states are mastered, which is the premise of establishing the thermal management technology of high-power electronic devices. the main work of this paper includes: 1 high heat flux density micro/ nano-scale electronic device thermoelectric model builds up with the reduction of the feature size of the semiconductor device and the increase of power, the heat flow density of the device increases sharply, At this time, the feature size of the device is equivalent to the average free path of the thermal carrier in the device, and when the traditional method is applied, a larger error will be generated. At this time, the migration process and the electrons of the electrons and the acoustic sub-carriers should be described from the micro or meso scale according to the thermal mechanism of the device. The heat and heat transfer process inside the device is studied by the scattering effect between the acoustic photons. In this paper, the thermal and heat transfer model of a field effect transistor with micro/ nano scale is established by using the lattice Boltzmann method. In this model, the coupling process of the electron and the phonon is taken into account, and the source term generated by the applied electric field is added into the acoustic sub-equation. The temperature distribution inside the device under different working conditions is analyzed. In addition, when the thermal management mode is changed, for example, the convection heat transfer coefficient of upper and lower boundary is increased, the temperature distribution inside the device is calculated when different thermal management modes are calculated, and a certain theoretical basis is provided for the thermal design. Secondly, the heat transfer model of non-energy balance micro/ nano-scale transistor is established in this paper. In the heat transfer model established by lattice-Boltzmann, the classification of acoustic sub-particles is neglected. The acoustic phonon is divided into optical phonon and acoustic phonon according to the frequency, the group velocity of the optical phonon is small approaching to 0, the group velocity of the acoustic phonon is larger, so the acoustic phonon is the main carrier of heat transfer in the device, therefore, in order to improve the accuracy of calculation, the non-energy balance method is applied, considering the interaction of the electrons, the optical phonon, the acoustic phonon in the transistor, the thermoelectric characteristics inside the transistor are calculated, including the electric field strength, the electric potential, the temperature, and the jjjj thermal distribution, etc. The simulation of the thermoelectric characteristics of the two-finger device is for the electronic device, the structure of which exhibits periodic characteristics. Most of the previous literatures are single-finger devices as one structural unit, while in the actual structure, the smallest structural unit is a double-finger device. The difference between the source, the grid and the drain is different. In the device, the position of the electrode distribution plays an important role in the intensity distribution of the electric field, and the distribution of the electric field intensity also determines the temperature distribution inside the device and the Joule heat distribution. in that micro/ nano-scale semiconductor device, the heat mechanism of the micro/ nano-scale semiconductor device can be simply described as follows: under the action of the applied high electric field, the electrons obtain extremely high energy, The energetic electrons then pass energy to the phonon and propagate energy through the motion of the phonon. In the actual process, the temperature distribution is influenced by many factors. In the case of double-finger device, the difference of temperature distribution inside the device is caused by the difference of applied voltage. Second, the doping concentration is also an important influencing factor for the semiconductor device, and the highest temperature increases as the doping concentration increases. Third, the heat management mode is different, and the influence on internal temperature distribution and Joule heat distribution is different. Therefore, the influence of different parameters on the thermoelectric properties of the device under the influence of different parameters on the thermoelectric properties of the device is studied, and the parameters under normal operating conditions of the device are found. and provides a theoretical basis for the thermal design workers.
【学位授予单位】：南京理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN32
【参考文献】
相关期刊论文 前1条
1 翁寿松;摩尔定律与半导体设备[J];电子工业专用设备;2002年04期
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