碳化硅功率器件关键工艺研究
发布时间：2018-10-15 17:29
【摘要】：以碳化硅(SiC)材料为代表的第三代宽禁带半导体材料具有宽带隙、高临界击穿电场、高热导率、高载流子饱和漂移速率等特点,特别适合制作耐高温、高电压、大功率的电力电子器件,现已成为制备电力电子器件的理想材料。以碳化硅材料制备的功率器件,具有击穿电压高、功率大、耐高温、可靠性高、损耗低等特点,将成为构建新一代高效输配电网络、满足新能源发展需要、支撑我国国民经济发展的关键性技术。本文的工作是在国家863项目(《基于宽禁带电力电子器件的光伏逆变器研制及示范应用》SQ2014AAJY1062)的支持下进行的,主要从基于碳化硅器件制备中的关键工艺角度来研究制备工艺特性,提高器件的成品率,并改善器件的可靠性。主要内容包括:1、本文针对碳化硅功率器件做了工艺研究,特别是对欧姆接触工艺做了深入研究,从金属与半导体接触理论入手,分析了欧姆接触的形成机理,介绍了欧姆接触获得低接触电阻的条件。针对碳化硅材料研究了碳化硅与金属的接触特性。2、通过对碳化硅欧姆接触特性进行理论和实验调查分析,针对碳化硅欧姆接触设计了实验。本文制备了金属与碳化硅接触样品,并使用快速退火设备进行了不同工艺条件下的金属与碳化硅欧姆接触退火。3、本文针对金属和碳化硅接触性能做了测试和分析,分析了不同退火温度对金属碳化硅接触特性的影响,通过测试比接触电阻随温度的变化关系,发现退火温度越高,比接触电阻率越低,并优化出最佳工艺条件为:1000度退火2分钟,在此工艺条件下得到的比接触电阻为2.3×10-5Ωcm2。4、本文介绍了在使用等离子体刻蚀机刻蚀碳化硅工艺中,调整刻蚀参数使样品底部的微沟道削弱的刻蚀技术,研究了刻蚀机刻蚀功率、反应腔室压力等条件对刻蚀结果的影响,着重阐述了RF功率对刻蚀微沟道效应和刻蚀速率的影响并进行了优化。通过对测试结果的分析,得出了适合实际工艺的优化条件,获得了无微沟道效应的刻蚀工艺,刻蚀速率达到100nm/min,底部粗糙度1.3nm,为设计高压器件提供了工艺保障。
[Abstract]:The third generation wide band gap semiconductor material, represented by silicon carbide (SiC) material, has the characteristics of wide band gap, high critical breakdown electric field, high thermal conductivity, high carrier saturation drift rate and so on, so it is especially suitable for making high temperature resistance and high voltage. High power electronic devices have become an ideal material for power electronic devices. The power device made of silicon carbide material, with the characteristics of high breakdown voltage, high power, high temperature resistance, high reliability and low loss, will become a new generation of high-efficiency transmission and distribution network to meet the needs of new energy development. The key technology that supports our country national economy development. The work of this paper is carried out under the support of the National 863 Project ("Research and demonstration Application of Photovoltaic Inverter based on wide Band-gap Power Electronic Devices"), which is mainly based on the key process of fabrication of silicon carbide devices. Improve the yield of the device and improve the reliability of the device. The main contents are as follows: 1. The process of silicon carbide power devices is studied in this paper, especially the ohmic contact technology. The formation mechanism of ohmic contact is analyzed based on the contact theory of metal and semiconductor. The conditions for obtaining low contact resistance by ohmic contact are introduced. The contact characteristics between silicon carbide and metal were studied. 2. Through theoretical and experimental investigation and analysis of ohmic contact characteristics of silicon carbide, an experiment was designed for ohmic contact of silicon carbide. In this paper, the contact samples of metal and silicon carbide were prepared, and the contact annealing between metal and silicon carbide under different process conditions was carried out by using rapid annealing equipment. 3. The contact properties of metal and silicon carbide were tested and analyzed in this paper. The influence of different annealing temperatures on the contact characteristics of metal silicon carbide is analyzed. By testing the relation between specific contact resistance and temperature, it is found that the higher the annealing temperature, the lower the specific contact resistivity. The optimum process conditions are as follows: annealing at 1000 degree for 2 minutes, and the specific contact resistance of 2.3 脳 10 ~ (-5) 惟 cm2.4, is obtained under this condition. In this paper, the process of silicon carbide etching with plasma etching machine is introduced. The etching technique of adjusting the etching parameters to weaken the microchannel at the bottom of the sample was used to study the influence of etching power and pressure of the reaction chamber on the etching results. The influence of RF power on the etch microchannel effect and etching rate is discussed and optimized. Through the analysis of the test results, the optimum conditions suitable for the practical process are obtained, and the etching process without microchannel effect is obtained. The etching rate is 100 nm / min and the bottom roughness is 1.3 nm, which provides a technological guarantee for the design of high voltage devices.
【学位授予单位】：北京工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304.24
本文编号：2273274
[Abstract]:The third generation wide band gap semiconductor material, represented by silicon carbide (SiC) material, has the characteristics of wide band gap, high critical breakdown electric field, high thermal conductivity, high carrier saturation drift rate and so on, so it is especially suitable for making high temperature resistance and high voltage. High power electronic devices have become an ideal material for power electronic devices. The power device made of silicon carbide material, with the characteristics of high breakdown voltage, high power, high temperature resistance, high reliability and low loss, will become a new generation of high-efficiency transmission and distribution network to meet the needs of new energy development. The key technology that supports our country national economy development. The work of this paper is carried out under the support of the National 863 Project ("Research and demonstration Application of Photovoltaic Inverter based on wide Band-gap Power Electronic Devices"), which is mainly based on the key process of fabrication of silicon carbide devices. Improve the yield of the device and improve the reliability of the device. The main contents are as follows: 1. The process of silicon carbide power devices is studied in this paper, especially the ohmic contact technology. The formation mechanism of ohmic contact is analyzed based on the contact theory of metal and semiconductor. The conditions for obtaining low contact resistance by ohmic contact are introduced. The contact characteristics between silicon carbide and metal were studied. 2. Through theoretical and experimental investigation and analysis of ohmic contact characteristics of silicon carbide, an experiment was designed for ohmic contact of silicon carbide. In this paper, the contact samples of metal and silicon carbide were prepared, and the contact annealing between metal and silicon carbide under different process conditions was carried out by using rapid annealing equipment. 3. The contact properties of metal and silicon carbide were tested and analyzed in this paper. The influence of different annealing temperatures on the contact characteristics of metal silicon carbide is analyzed. By testing the relation between specific contact resistance and temperature, it is found that the higher the annealing temperature, the lower the specific contact resistivity. The optimum process conditions are as follows: annealing at 1000 degree for 2 minutes, and the specific contact resistance of 2.3 脳 10 ~ (-5) 惟 cm2.4, is obtained under this condition. In this paper, the process of silicon carbide etching with plasma etching machine is introduced. The etching technique of adjusting the etching parameters to weaken the microchannel at the bottom of the sample was used to study the influence of etching power and pressure of the reaction chamber on the etching results. The influence of RF power on the etch microchannel effect and etching rate is discussed and optimized. Through the analysis of the test results, the optimum conditions suitable for the practical process are obtained, and the etching process without microchannel effect is obtained. The etching rate is 100 nm / min and the bottom roughness is 1.3 nm, which provides a technological guarantee for the design of high voltage devices.
【学位授予单位】：北京工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304.24
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