超宽带微波固态功率放大器研究
发布时间：2018-10-16 14:17
【摘要】：本文基于GaN HEMT设计了S-C波段的超宽带功率放大器。介绍了最近几年的宽带功率放大器的研究状况以及功率放大器设计的种类指标参数的定义,介绍了目前宽带功率放大器实现的方法,并设计制作了加电时序电路。共设计制作了三款宽带功率放大器模块,其中两个3-8GHz中功率的宽带功率放大器模块(中级)和一个大功率(末级)的宽带功率放大器模块。前者最大输出功率为38.5dBm,后者输出功率为45dBm。首先本文查阅了九十年代以来国内外对超宽带射频功率放大器研究的成果和进展状况。意识到了实现宽带大功率放大器的紧迫性。通过对当前国内外成果的调查,分析出了国内外对宽带功率放大器已经研究的内容和未来发展的方向。然后简单的讨论和分析了射频功率放大器的分类以及各自应用的特点。介绍了功率放大器中基本的设计指标和参数,说明了在设计过程中应该注意那些问题。强调了“零”点电容的作用,介绍了基于GaN的新型负反馈电路结构以及微带线理论,分析了微带线在匹配过程中应该注意的问题。介绍了屏蔽腔体设计过程注意的事项以及整个设计要具有工程性。强调了设计初始要了解整个微组装的流程。最后仿真并制作了三个不同的3-8GHz的宽带功率放大器模块,驱动级最大输出功率为38.5dBm,末级输出功率为45d Bm。利用ADS分别对放大器的芯片进行了建模,并且对金丝键合线在HFSS中和ADS中的仿真模型进行了对比。本文对设计的功率放大器进行了加工制作和测试并对仿真结果和测试结果进行对比与分析。另外还制作了加电时序电路,并进行了测试。本文采用的TriQuint公司的GaN HEMT芯片TGF2023-02和TGF2023-20两种裸片,分别用于驱动级和末级的设计。设计中采用自己项目组建立的芯片模型,并使用键合线进行连接微带线和芯片。设计的功率放大器工作在AB类,末级设计的3-8GHz宽带功率放大器,输出功率为45dBm。从目前检索的文献来看这是在国内外非常罕见的。
[Abstract]:In this paper, an S-C band UWB power amplifier is designed based on GaN HEMT. This paper introduces the research status of wideband power amplifier in recent years and the definition of the parameters of power amplifier design. It also introduces the realization method of wideband power amplifier at present, and designs and manufactures the power supply sequential circuit. Three kinds of broadband power amplifier modules are designed and fabricated, including two power broadband power amplifier modules (intermediate) and one high-power (last stage) broadband power amplifier module in 3-8GHz. The maximum output power of the former is 38.5 dBmand the latter is 45dBm. Firstly, this paper reviews the research achievements and progress of UWB RF power amplifier since 1990's. Realize the urgency of realizing broadband high power amplifier. Based on the investigation of domestic and foreign achievements, the contents and future development of broadband power amplifiers are analyzed. Then the classification of RF power amplifier and the characteristics of their applications are discussed and analyzed briefly. This paper introduces the basic design indexes and parameters of power amplifier, and explains the problems that should be paid attention to in the process of design. This paper emphasizes the function of "zero" point capacitance, introduces the new negative feedback circuit structure based on GaN and the theory of microstrip line, and analyzes the problems that should be paid attention to in the matching process of microstrip line. This paper introduces the matters needing attention in the design process of shielded cavity and the engineering character of the whole design. Emphasis is placed on the initial understanding of the entire microassembly process. Finally, three different 3-8GHz broadband power amplifier modules are simulated and fabricated. The maximum output power of the drive stage is 38.5 dBmand the final output power is 45 d Bm.. The chip of amplifier is modeled by ADS, and the simulation model of gold wire bonding line in HFSS and ADS is compared. In this paper, the power amplifier is fabricated and tested, and the simulation results and test results are compared and analyzed. In addition, the power-up sequential circuit is made and tested. In this paper, TriQuint GaN HEMT chip TGF2023-02 and TGF2023-20 are used for driver stage and final stage design, respectively. In the design, the chip model established by our project group is used, and the bonding line is used to connect the microstrip wire and the chip. The designed power amplifier works in the AB class, the last stage of the 3-8GHz wideband power amplifier, the output power is 45dBmm. This is very rare at home and abroad as far as the literature is concerned.
【学位授予单位】：杭州电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN722.75
本文编号：2274630
[Abstract]:In this paper, an S-C band UWB power amplifier is designed based on GaN HEMT. This paper introduces the research status of wideband power amplifier in recent years and the definition of the parameters of power amplifier design. It also introduces the realization method of wideband power amplifier at present, and designs and manufactures the power supply sequential circuit. Three kinds of broadband power amplifier modules are designed and fabricated, including two power broadband power amplifier modules (intermediate) and one high-power (last stage) broadband power amplifier module in 3-8GHz. The maximum output power of the former is 38.5 dBmand the latter is 45dBm. Firstly, this paper reviews the research achievements and progress of UWB RF power amplifier since 1990's. Realize the urgency of realizing broadband high power amplifier. Based on the investigation of domestic and foreign achievements, the contents and future development of broadband power amplifiers are analyzed. Then the classification of RF power amplifier and the characteristics of their applications are discussed and analyzed briefly. This paper introduces the basic design indexes and parameters of power amplifier, and explains the problems that should be paid attention to in the process of design. This paper emphasizes the function of "zero" point capacitance, introduces the new negative feedback circuit structure based on GaN and the theory of microstrip line, and analyzes the problems that should be paid attention to in the matching process of microstrip line. This paper introduces the matters needing attention in the design process of shielded cavity and the engineering character of the whole design. Emphasis is placed on the initial understanding of the entire microassembly process. Finally, three different 3-8GHz broadband power amplifier modules are simulated and fabricated. The maximum output power of the drive stage is 38.5 dBmand the final output power is 45 d Bm.. The chip of amplifier is modeled by ADS, and the simulation model of gold wire bonding line in HFSS and ADS is compared. In this paper, the power amplifier is fabricated and tested, and the simulation results and test results are compared and analyzed. In addition, the power-up sequential circuit is made and tested. In this paper, TriQuint GaN HEMT chip TGF2023-02 and TGF2023-20 are used for driver stage and final stage design, respectively. In the design, the chip model established by our project group is used, and the bonding line is used to connect the microstrip wire and the chip. The designed power amplifier works in the AB class, the last stage of the 3-8GHz wideband power amplifier, the output power is 45dBmm. This is very rare at home and abroad as far as the literature is concerned.
【学位授予单位】：杭州电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN722.75
【参考文献】
相关期刊论文 前2条
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2 陈雪军,高建峰,陈效建,林金庭;2～26GHzGaAs单片功率放大器[J];电子学报;2000年11期
，本文编号：2274630
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