高深宽比石英结构的NLD刻蚀
发布时间：2018-10-18 13:07
【摘要】：基于磁中性环路放电(NLD)等离子体刻蚀机的原理,研究了Ar和C_4F_8混合气体氛围下,射频(RF)天线功率、偏置电源功率、气压和C4F8体积流量等工艺参数对NLD刻蚀石英的影响,最终获取优化的工艺参数,用于高深宽比石英结构的制备。结果表明,随着RF天线功率的增加,石英刻蚀速率逐渐降低,偏压不断减小;增加偏置电源功率,刻蚀速率及偏压持续增大,刻蚀比不断增大;随着反应压强的增加,偏压变大,而刻蚀速率一直降低;C_4F_8体积流量增加,偏压一直增大,石英刻蚀速率先是快速上升而后逐渐变小。在优化的工艺参数下,刻蚀速率为439 nm/min,深宽比可以达到10∶1。
[Abstract]:Based on the principle of magnetic neutral loop discharge (NLD) plasma etch machine, the effects of RF (RF) antenna power, bias power, air pressure and C4F8 volume flow rate on NLD etched quartz in the mixed gas atmosphere of Ar and C_4F_8 are studied. Finally, the optimized process parameters were obtained for the preparation of quartz structure with high aspect ratio. The results show that with the increase of RF antenna power, the etching rate of quartz decreases gradually, the bias voltage decreases, the etching rate and bias voltage increase, and the etching ratio increases with the increase of the reactive pressure. The bias voltage increases and the etching rate decreases, while the C_4F_8 volume flow rate increases and the bias voltage increases. The etching rate of quartz increases rapidly and then decreases gradually. Under the optimized process parameters, the etching rate is 439 nm/min, and the aspect ratio can reach 10: 1.
【作者单位】： 上海大学材料科学与工程学院;中国科学院苏州纳米技术与纳米仿生研究所纳米加工平台;
【基金】：国家自然科学基金青年科学基金资助项目(11304356)
【分类号】：TN305.7
本文编号：2279218
[Abstract]:Based on the principle of magnetic neutral loop discharge (NLD) plasma etch machine, the effects of RF (RF) antenna power, bias power, air pressure and C4F8 volume flow rate on NLD etched quartz in the mixed gas atmosphere of Ar and C_4F_8 are studied. Finally, the optimized process parameters were obtained for the preparation of quartz structure with high aspect ratio. The results show that with the increase of RF antenna power, the etching rate of quartz decreases gradually, the bias voltage decreases, the etching rate and bias voltage increase, and the etching ratio increases with the increase of the reactive pressure. The bias voltage increases and the etching rate decreases, while the C_4F_8 volume flow rate increases and the bias voltage increases. The etching rate of quartz increases rapidly and then decreases gradually. Under the optimized process parameters, the etching rate is 439 nm/min, and the aspect ratio can reach 10: 1.
【作者单位】： 上海大学材料科学与工程学院;中国科学院苏州纳米技术与纳米仿生研究所纳米加工平台;
【基金】：国家自然科学基金青年科学基金资助项目(11304356)
【分类号】：TN305.7
【参考文献】
相关期刊论文 前2条
1 眭佳星;张赛谦;刘增;阎军;戴忠玲;;A Multi-Scale Study on Silicon-Oxide Etching Processes in C_4F_8/Ar Plasmas[J];Plasma Science and Technology;2016年06期
2 张伟;孙元平;刘彬;;SiC材料的NLD快速均匀刻蚀[J];微纳电子技术;2015年01期
【共引文献】
相关期刊论文 前2条
1 吴亚宁;张伟;王逸群;黄健;缪小虎;王进;金晓盛;;高深宽比石英结构的NLD刻蚀[J];微纳电子技术;2017年09期
2 孙慧勇;;SiC材料在高温洁净炉窑设计中的应用[J];工业设计;2016年06期
【二级参考文献】
相关期刊论文 前1条
1 张庆钊;谢常青;刘明;李兵;朱效立;陈宝钦;;ICP等离子体刻蚀系统射频偏压的实验研究[J];半导体学报;2008年05期
，本文编号：2279218
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