SiC功率MOSFET器件研制进展
发布时间：2018-10-21 09:34
【摘要】：碳化硅(SiC)功率金属-氧化物半导体场效应管(MOSFET)以其优越的性能受到广泛关注,但受限于器件设计和工艺技术水平,器件的潜力尚未得到充分发挥。介绍了SiC功率MOSFET的结构设计和加工工艺,采用一氧化氮(NO)栅氧退火工艺技术研制出击穿电压为1 800 V、比导通电阻为8mΩ·cm~2的SiC MOSFET器件,测试评价了器件的直流和动态特性,关断特性显著优于Si IGBT。评估了SiC MOSFET器件栅氧结构的可靠性,器件的栅氧介质寿命及阈值电压稳定性均达到工程应用要求。
[Abstract]:Silicon carbide (SiC) power metal-oxide semiconductor field effect transistor (MOSFET) has attracted wide attention for its superior performance. However, due to the level of device design and technology, the potential of the device has not been fully utilized. The structure design and fabrication process of SiC power MOSFET are introduced. A SiC MOSFET device with a breakdown voltage of 1 800 V and a specific on-resistance of 8 m 惟 cm~2 is developed by using the nitric oxide (NO) gate oxygen annealing technology. The DC and dynamic characteristics of the device are tested and evaluated. Turn-off characteristics are significantly better than Si IGBT. The reliability of gate oxygen structure of SiC MOSFET device is evaluated. The lifetime of gate oxygen medium and the stability of threshold voltage of SiC MOSFET device meet the requirements of engineering application.
【作者单位】： 宽禁带半导体电力电子器件国家重点实验室南京电子器件研究所;
【分类号】：TN386
[Abstract]:Silicon carbide (SiC) power metal-oxide semiconductor field effect transistor (MOSFET) has attracted wide attention for its superior performance. However, due to the level of device design and technology, the potential of the device has not been fully utilized. The structure design and fabrication process of SiC power MOSFET are introduced. A SiC MOSFET device with a breakdown voltage of 1 800 V and a specific on-resistance of 8 m 惟 cm~2 is developed by using the nitric oxide (NO) gate oxygen annealing technology. The DC and dynamic characteristics of the device are tested and evaluated. Turn-off characteristics are significantly better than Si IGBT. The reliability of gate oxygen structure of SiC MOSFET device is evaluated. The lifetime of gate oxygen medium and the stability of threshold voltage of SiC MOSFET device meet the requirements of engineering application.
【作者单位】： 宽禁带半导体电力电子器件国家重点实验室南京电子器件研究所;
【分类号】：TN386
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