星载X波段GaN固态功放技术研究

发布时间：2018-10-25 12:54

【摘要】：随着航天技术的不断发展,卫星数传对发射机有着更高的要求。功率放大器作为决定发射机性能的模块之一,更高的效率、大带宽、小体积、高稳定性等特点是其永恒的设计目标。目前在X波段常用的行波管放大器体积大、成本高,GaAs固态放大器的输出功率和效率偏低,二者均不能完全兼顾以上指标要求。由于GaN半导体技术的发展,GaN功率器件输出功率大、增益高、带宽大、效率高、稳定性好,适用于高效、大带宽功放的设计。论文的研究目的是研制出X波段的30W输出功率GaN固态功率放大器原理样机。论文首先介绍了GaN功放器件的特点、GaN器件对比GaAs器件的优势以及国内外发展动态和现状,并提出了论文的设计目标。之后简单阐述了功放设计的基本原理以及功放的主要参数。在第三章介绍了提取功放实际性能参数的大信号负载牵引测试技术、小信号的去嵌入技术以及相应的TRL校准技术的原理。论文在功放的设计中主要完成了以下工作:(1)通过需求分析和比较器件性能,制定了以SGK7785-30A作为GaN主功放器件的三级放大的电路设计方案;(2)设计了GaN放大器的夹具、校准件并完成了负载迁移测试,确定了功放的工作阻抗;依次设计了阻抗匹配网络、偏置网络、电路原理图并进行了相应的仿真分析;(3)设计、优化了电路版图及结构,并投板加工,进行了对功放性能的测试以及结果分析。测试结果表明,GaN功放在8.1GHz中心频率下输出功率大于33W,整机增益大于36dB、GaN单级效率大于35%,整机效率大于30%,带宽大于500MHz,带内增益平坦度小于1dB,功放结构的物理尺寸150 x 100 x 26 mm3。相较于同频段GaAs固态功放在输出功率、效率、增益上均有明显优势。
[Abstract]:With the continuous development of space technology, satellite data transmission has higher requirements for transmitters. As one of the modules that determine the transmitter performance, power amplifier has the characteristics of high efficiency, large bandwidth, small volume and high stability. At present, the traveling wave tube amplifiers commonly used in X-band are large in volume, high in cost, and low in output power and efficiency of GaAs solid-state amplifiers. Neither of them can fully meet the above requirements. Due to the development of GaN semiconductor technology, GaN power devices have large output power, high gain, large bandwidth, high efficiency and good stability. It is suitable for the design of high efficiency and large bandwidth power amplifier. The purpose of this paper is to develop a 30 W output power GaN solid state power amplifier principle prototype in X band. This paper first introduces the characteristics of GaN power amplifier devices, the advantages of GaN devices compared with GaAs devices, as well as the development trends and present situation at home and abroad, and puts forward the design objectives of the paper. After that, the basic principle of power amplifier design and the main parameters of power amplifier are briefly described. In the third chapter, the principle of large signal load traction test technique, small signal de-embedding technique and TRL calibration technique are introduced. The main work of this paper is as follows: (1) by analyzing the requirements and comparing the performance of the power amplifier, a three-stage amplifier circuit with SGK7785-30A as the main power amplifier device is designed, and (2) the clamp of the GaN amplifier is designed. The load transfer test is completed, and the working impedance of the power amplifier is determined. The impedance matching network, bias network, circuit schematic diagram and corresponding simulation analysis are designed in turn. (3) the layout and structure of the circuit are optimized. The performance of power amplifier was tested and the results were analyzed. The test results show that the output power of GaN power amplifier is more than 33W at the central frequency of 8.1GHz, the single-stage efficiency of the whole amplifier is more than 35dBGaN, the efficiency of the whole amplifier is more than 30m Hz, the bandwidth is more than 500MHz, the in-band gain flatness is less than 1dB, the physical size of the power amplifier structure is 150d100x 26 mm3.. Compared with the same frequency band GaAs solid-state power amplifier has obvious advantages in output power efficiency and gain.
【学位授予单位】：中国科学院国家空间科学中心
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN722.75

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