SOI材料和器件抗辐射加固技术

发布时间：2018-10-26 17:49

【摘要】：绝缘体上硅(SOI)技术是一种在硅材料与硅集成电路巨大成功的基础上发展起来的,有独特优势的并且能够突破传统硅集成电路限制的新技术.绝缘埋层(BOX)的存在使得SOI技术从根本上消除了体硅CMOS中的闩锁效应.在同等工艺节点下其单粒子翻转截面较体硅CMOS技术小了1~2个数量级,抗瞬时剂量率的能力也提高了2个数量级以上.这些固有优势使得SOI技术在军事和空间应用中具有举足轻重的地位.然而,在空间和核爆等电离辐射环境下,辐射将会在BOX层中引入大量的陷阱电荷.这些辐射感生的陷阱电荷会导致SOI器件和电路性能的退化,从而严重阻碍和制约了SOI技术在抗辐射加固中的应用.另一方面,SOI器件的寄生三极管放大效应会削弱SOI技术在抗单粒子辐射和瞬态辐射方面的优势,这使得抗辐射SOI器件与电路的加固设计面临着严峻的挑战.本文介绍了SOI器件中3种主要的电离辐射效应并对比了体硅器件和SOI器件辐射效应的差异.针对寄生双极晶体管导致SOI器件单粒子效应和剂量率效应敏感性增强的问题,提出了相应地减弱寄生双极晶体管效应的加固方法.针对SOI器件抗总剂量效应差的问题,分别从材料工艺和器件结构两个层次介绍了SOI器件的总剂量加固技术.
[Abstract]:Silicon (SOI) technology on insulator is a new technology which is developed on the basis of the great success of silicon material and silicon integrated circuit. It has unique advantages and can break through the limitation of traditional silicon integrated circuit. Because of the existence of (BOX) in the insulating layer, the latch effect in bulk silicon CMOS is eliminated by SOI technology. Under the same process node, the single particle flip cross section is 1 ~ 2 orders of magnitude smaller than that of bulk silicon CMOS technology, and the ability to resist instantaneous dose rate is improved by more than 2 orders of magnitude. These inherent advantages make SOI technology play an important role in military and space applications. However, in the environment of ionizing radiation such as space and nuclear explosion, radiation will introduce a large number of trap charges in the BOX layer. These radiation-induced trap charges will lead to the degradation of the performance of SOI devices and circuits, which seriously hinder and restrict the application of SOI technology in radiation hardening. On the other hand, the parasitic transistor amplification effect of SOI devices will weaken the advantages of SOI technology in the protection of single particle radiation and transient radiation, which makes the strengthening design of radiation resistant SOI devices and circuits face a severe challenge. In this paper, three main ionizing radiation effects in SOI devices are introduced and the differences between bulk silicon devices and SOI devices are compared. Aiming at the problem that parasitic bipolar transistors enhance the sensitivity of single particle effect and dose rate effect of SOI devices, a reinforcement method is proposed to weaken the parasitic bipolar transistor effect. Aiming at the problem of low total dose effect (TDE) of SOI devices, the total dose strengthening technology of SOI devices is introduced from two aspects: material process and device structure.
【作者单位】：中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室;
【分类号】：TN386

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