热退火过程对锑化物合金质量及发光特性影响的研究
发布时间：2018-10-26 18:05
【摘要】：作为窄禁带半导体的GaAsSb,是一种性能优良的红外光电材料。在合金生长过程中,由于Sb的引入,造成合金内组分不均匀现象,形成局域态,并且对载流子产生束缚,引起局域态发光现象。而热退火工艺可以对合金中组分不均匀现象进行改善,可以有效的调节局域态发光。因此开展热退火工艺对锑化物合金质量及发光特性研究工作是有重要意义的。利用分子束外延(MBE)技术在GaAs衬底上生长了Sb组分为9%的GaAsSb合金,并在合金中观察到局域态发光的现象。对GaAs_(0.91)Sb_(0.09)合金进行慢速退火处理,研究发现这种退火处理引起了局域态的加重,造成的原因可能是退火所引起的砷和锑组分扩散。虽然慢速退火处理后合金带边发光比例增加,这对于提高带边发光是有利的,但是并没有消除局域态的发光。采用快速热退火在不同的时间下对合金进行处理。其中退火为10s的处理条件下,局域态得到了较好的抑制。但是,随着退火时间的增加,合金中的局域态现象又加重了。通过XRD测试表明,GaAs_(0.91)Sb_(0.09)合金质量在10s退火处理下是最优化的。通过慢速退火和快速热退火处理后对比,分析合金的XRD和PL光谱,可知,慢速退火会使合金中的局域态现象更加严重。而通过快速热退火可以减少GaAs_(0.91)Sb_(0.09)合金中的局域态现象,是调控局域态的良好手段。本文通过快速热退火对GaAsSb合金的处理方法,达到良好的抑制局域态效果,并且提高合金质量。因此抑制局域态发光以及改善局域态发光方面,快速热退火处理技术优于慢速退火。
[Abstract]:As a narrow band gap semiconductor, GaAsSb, is a kind of infrared optoelectronic material with excellent performance. During the growth of the alloy, the introduction of Sb leads to the inhomogeneity of the composition in the alloy, the formation of the local state, and the binding of the carriers, which results in the local luminescence. The thermal annealing process can improve the inhomogeneity of the alloy and adjust the local luminescence effectively. Therefore, it is of great significance to study the quality and luminescence characteristics of antimonide alloy by thermal annealing. A 9% Sb alloy was grown on GaAs substrate by molecular beam epitaxy (MBE) (MBE) technique, and the localized luminescence was observed in the alloy. GaAs_ _ (0.91) Sb_ _ (0.09) alloy was annealed at a slow rate. It was found that the local state was aggravated by this annealing treatment, which may be due to the diffusion of arsenic and antimony components caused by annealing. Although the ratio of band-edge luminescence increases after slow annealing, it is beneficial to increase the band-edge luminescence, but it does not eliminate the localized luminescence. The alloy was treated by rapid thermal annealing at different time. The local states were well suppressed under the annealing condition of 10 s. However, with the increase of annealing time, the local state phenomenon in the alloy is aggravated. XRD results show that the quality of GaAs_ (0.91) Sb_ (0.09) alloy is optimized under 10 s annealing. The XRD and PL spectra of the alloy are analyzed by comparing the slow annealing and the rapid thermal annealing. It is shown that the local state phenomenon in the alloy will be more serious after slow annealing. The local state in GaAs_ (0. 91) Sb_ (0. 09) alloy can be reduced by rapid thermal annealing, which is a good means to regulate the local state. In this paper, the treatment of GaAsSb alloy by rapid thermal annealing has achieved a good effect of restraining the local state and improving the quality of the alloy. Therefore, fast thermal annealing is superior to slow annealing in suppressing local state luminescence and improving local state luminescence.
【学位授予单位】：长春理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN304
本文编号：2296536
[Abstract]:As a narrow band gap semiconductor, GaAsSb, is a kind of infrared optoelectronic material with excellent performance. During the growth of the alloy, the introduction of Sb leads to the inhomogeneity of the composition in the alloy, the formation of the local state, and the binding of the carriers, which results in the local luminescence. The thermal annealing process can improve the inhomogeneity of the alloy and adjust the local luminescence effectively. Therefore, it is of great significance to study the quality and luminescence characteristics of antimonide alloy by thermal annealing. A 9% Sb alloy was grown on GaAs substrate by molecular beam epitaxy (MBE) (MBE) technique, and the localized luminescence was observed in the alloy. GaAs_ _ (0.91) Sb_ _ (0.09) alloy was annealed at a slow rate. It was found that the local state was aggravated by this annealing treatment, which may be due to the diffusion of arsenic and antimony components caused by annealing. Although the ratio of band-edge luminescence increases after slow annealing, it is beneficial to increase the band-edge luminescence, but it does not eliminate the localized luminescence. The alloy was treated by rapid thermal annealing at different time. The local states were well suppressed under the annealing condition of 10 s. However, with the increase of annealing time, the local state phenomenon in the alloy is aggravated. XRD results show that the quality of GaAs_ (0.91) Sb_ (0.09) alloy is optimized under 10 s annealing. The XRD and PL spectra of the alloy are analyzed by comparing the slow annealing and the rapid thermal annealing. It is shown that the local state phenomenon in the alloy will be more serious after slow annealing. The local state in GaAs_ (0. 91) Sb_ (0. 09) alloy can be reduced by rapid thermal annealing, which is a good means to regulate the local state. In this paper, the treatment of GaAsSb alloy by rapid thermal annealing has achieved a good effect of restraining the local state and improving the quality of the alloy. Therefore, fast thermal annealing is superior to slow annealing in suppressing local state luminescence and improving local state luminescence.
【学位授予单位】：长春理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN304
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