TSV封装中阻抗不连续差分互连结构宽频寄生参数建模研究

发布时间：2018-10-29 21:23

【摘要】：为了研究TSV封装内除差分对硅通孔外在硅基片的层间和层下存在的微凸点、平面互连线、倒装焊球等互连结构对差分信号传输特性的影响,提出了一种改进型的适用于描述TSV封装内"串连型差分互连阻抗"的差分对硅通孔结构的RLCG电路模型,进而提出了一种采用"阻抗不连续系数"来描述串行连接的微凸点、平面互连线、倒装焊球等结构的"串连式阻抗不连续结构"RLCG电路模型.在此基础之上,采用HFSS三维全波仿真方法对TSV封装中的硅通孔、微凸点、平面互连线、倒装焊球等差分对互连结构的各种串行连接方式进行了三维电磁场建模和分析.将RLCG模型的差模正向传输系数与HFSS模型的分析结果进行了对比,对比结果证明在0.1~30GHz特别是3~25GHz宽频段内本文提出的上述2种RLCG电路模型能够较为准确的描述出差分互连结构的差模信号宽频传输特性.
[Abstract]:In order to study the influence of interlayer and sublayer interconnect points, planar interconnects, reverse welded balls and other interconnect structures in TSV packaging on the differential signal transmission characteristics, the difference between the silicon substrate and the through hole outside the silicon substrate is studied. In this paper, an improved RLCG circuit model for describing the "serial differential interconnect impedance" in TSV package is proposed. Furthermore, a "impedance discontinuity coefficient" is proposed to describe the microconvex point of serial connection. The RLCG circuit model of "series impedance discontinuous structure" with planar interconnect, reverse bonding ball and so on. On the basis of this, the 3D electromagnetic field modeling and analysis of various serial connection modes of interconnect structure such as silicon through hole, micro-convex point, plane interconnection line and reverse assembly welding ball in TSV packaging are carried out by using HFSS three-dimensional full-wave simulation method. The difference mode forward transmission coefficient of RLCG model is compared with that of HFSS model. The comparison results show that the two kinds of RLCG circuit models proposed in this paper in 0.1~30GHz, especially in the 3~25GHz broadband band, can accurately describe the characteristics of the differential mode signal broadband transmission of the commutative interconnect structure.
【作者单位】：中国科学院微电子研究所;
【基金】：国家自然科学基金项目(61306135)
【分类号】：TN405

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