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碱性抛光液速率稳定性的研究

发布时间:2018-10-30 14:51
【摘要】:随着极大规模集成电路的大规模产业化,对于平坦化技术的要求也越来越高。目前,普遍应用的平坦化工艺为化学机械平坦化(CMP),在化学机械平坦化中,抛光机,抛光工艺和使用的抛光材料即抛光液的质量直接决定着化学机械平坦化的效果,抛光液在其中又起到关键作用,抛光液的好坏直接决定着CMP的效果。目前产业化中使用的抛光液多为酸性抛光液,但随着极大规模集成电路发展至22nm节点以下,只有碱性抛光液才能达到平坦化的需求。由于碱性抛光液使用双氧水(H2O2)作为氧化剂,双氧水本身即存在不稳定性,在酸性环境中相对稳定,在碱性环境中易分解产生水和氧气,因此导致碱性抛光液存在不稳定,配置完成后,短时间内发生不稳定现象。碱性抛光液速率稳定性在世界上是个难题,通过实验大幅提高碱性抛光液速率的稳定性。因此研究碱性抛光液的稳定性具有十分重要的意义。本文通过以下方法研究碱性抛光液中各组分对于碱性抛光液稳定性的影响和如何延长碱性抛光液的方法:碱性抛光液选用河北工业大学微电子所研制的碱性铜CMP抛光液,使用称重法测量抛光速率。通过改变碱性抛光液中各组分,即螯合剂、活性剂、磨料、氧化剂和去离子水的含量和配比,了解各组分对于抛光液速率稳定性的影响;另外通过改变抛光液配置方法,加入稳定剂,调整抛光液pH值等方法研究其他因素对于碱性抛光液速率稳定性的影响。通过对于各种因素对碱性抛光液速率稳定性的影响选择一种或多种可延长碱性抛光液速率稳定性的方法。通过各种实验表明了各种成分对于碱性抛光液速率稳定性的影响,在碱性抛光液的个组成成分中,螯合剂、磨料和氧化剂对于的抛光液速率稳定性的影响较大,起主要因素;活性剂和去离子对于抛光液速率稳定性的影响不大。通过各种因素的调整,得到一种速率可稳定达5天的碱性抛光液,在速率为5000?/min的抛光液可稳定8小时。
[Abstract]:With the large-scale industrialization of large scale integrated circuits, the requirement of flatting technology is higher and higher. At present, the widely used flattening process is chemical mechanical flattening (CMP),). The quality of polishing machine, polishing process and polishing material, that is, polishing liquid, directly determines the effect of chemical mechanical flattening. Polishing liquid plays a key role in it, and the quality of polishing liquid directly determines the effect of CMP. At present, most of the polishing liquid used in industrialization is acidic polishing liquid, but with the development of the maximum scale integrated circuit below the 22nm node, only the alkaline polishing liquid can achieve the demand of flatness. Because hydrogen peroxide (H2O2) is used as oxidant in alkaline polishing liquid, hydrogen peroxide itself is unstable, relatively stable in acidic environment, and easy to decompose to produce water and oxygen in alkaline environment, which leads to instability of alkaline polishing liquid. After the configuration is completed, instability occurs in a short period of time. The rate stability of alkaline polishing liquid is a difficult problem in the world. Therefore, it is of great significance to study the stability of alkaline polishing liquid. In this paper, the effect of various components in alkaline polishing solution on the stability of alkaline polishing liquid and how to prolong the alkaline polishing liquid are studied. The alkaline polishing liquid is made of alkaline copper CMP, which is developed by microelectronics of Hebei University of Technology. Use weighing method to measure polishing rate. By changing the content and ratio of chelating agent, active agent, abrasive, oxidant and deionized water in alkaline polishing liquid, the effect of each component on the rate stability of polishing solution was studied. In addition, the effect of other factors on the rate stability of alkaline polishing liquid was studied by changing the method of polishing liquid configuration, adding stabilizer and adjusting the pH value of polishing liquid. According to the influence of various factors on the rate stability of alkaline polishing liquid, one or more methods can be used to prolong the rate stability of alkaline polishing liquid. The effect of various components on the stability of the rate of alkaline polishing liquid is shown by various experiments. Among the components of the basic polishing liquid, the chelating agent, abrasive and oxidant have a great influence on the stability of the rate of the polishing liquid, which is the main factor. The effect of active agent and deionization on the rate stability of polishing liquid is not significant. Through the adjustment of various factors, an alkaline polishing solution with a stable rate of 5 days was obtained, which can be stabilized for 8 hours at the rate of 5000?/min.
【学位授予单位】:河北工业大学
【学位级别】:硕士
【学位授予年份】:2015
【分类号】:TN305.2

【参考文献】

相关期刊论文 前1条

1 胡轶;刘玉岭;刘效岩;何彦刚;王立冉;张保国;;Effect of alkaline slurry on the electric character of the pattern Cu wafer[J];半导体学报;2011年07期



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