纳米光栅的位相掩膜相干光光刻方法与工艺研究
发布时间：2018-11-01 14:36
【摘要】：微电子、微加工技术从上个世纪60年代就取得了飞速发展,光刻工艺是它们的一种核心技术,是半导体表面加工技术中最精密的一种方法。本文主要介绍用位相掩膜相干光光刻方法制备纳米级光栅的工艺,包括以下几个部分：第一部分是绪论部分,简单介绍了光刻工艺的发展背景和意义,以及纳米压印的原理及工艺流程。第二部分是理论介绍部分,简单介绍了位相掩膜相干光光刻方法的理论基础,分析指出要成功制备出周期较掩膜板减小一半的光栅图形必须保证有且仅有±1级衍射光进行干涉,由于±2级等以上级次的衍射光成为了表面消逝波,因此比较关键的是对0级衍射光的抑制。这一部分还介绍了使用两种方法对光栅图形的占空比进行调节,分别为曝光显影法和遮蔽沉积法。第三部分是实验部分。通过位相掩膜相干光光刻方法制备出了周期较掩膜板减小一半的纳米周期性光栅图形。在这部分中,我们重点分析了不能制得大面积周期性光栅的原因,主要是由于掩膜板与衬底在纳米级别的完美贴合比较困难以及通过人工放置掩膜板与样品的固定位置使入射光垂直从掩膜板背面入射比较困难所造成的。第四部分是模拟部分。我们利用comsol软件对掩膜板后的场强进行了模拟。我们首先固定掩膜板的周期,调节它的刻蚀深度来寻找周期固定时它的最佳刻蚀深度。接着我们模拟了掩膜板的周期在λ(?)2λ((?)为掩膜板周期,λ为入射光波长)这个范围内变化时,它不同周期时的最佳刻蚀深度。最后我们固定掩膜板的刻蚀深度,模拟了掩膜板周期分别在(?)λ、(?)~λ和λ(?)2λ这三个不同区域时掩膜板后的场强分布。我们发现当掩膜板的周期在接近1.5λ时,在最佳刻蚀深度所得到的场强是最好的,掩膜板的周期越接近于λ或者2λ时,所得到的场强越差,甚至得不到周期较掩膜板减小一般的场强。这可能是由于当掩膜板周期接近1.5λ时,±1级衍射光比较强,此时的0级及2级等以上级次的衍射光相对比较弱的缘故。当掩膜板的周期接近λ时,其后的光场周期与掩膜板的相同,且层与层之间有场强相互交叉的现象,这可能是由于当掩膜板的周期接近于λ时,0级衍射光在所有衍射光中所占的比重有所提高,它与±1级衍射光产生的干涉现象,而当掩膜板的周期接近2λ时,其后的光场比较乱,这可能是由于此时±2级衍射光也参与了干涉。第五部分是对本文所做的工作的总结及展望。
[Abstract]:The technology of microelectronics and micromachining has been developing rapidly since the 1960s. Lithography is one of their core technologies and the most precise method in semiconductor surface processing. In this paper, the fabrication process of nanocrystalline grating by phase-mask coherent photolithography is introduced, including the following parts: the first part is the introduction part, the development background and significance of lithography technology are briefly introduced. And the principle and process of nano-imprint. The second part is the theoretical introduction, which briefly introduces the theoretical basis of phase mask coherent photolithography. It is pointed out that in order to successfully fabricate the grating pattern with half less period than the mask plate, only 卤1 order diffraction light interference must be guaranteed. Because the diffraction light of 卤2 order becomes the surface evanescent wave, it is more important to suppress the 0-order diffraction light. In this part, we also introduce two methods to adjust the duty cycle of grating pattern, namely, exposure development method and shaded deposition method. The third part is the experimental part. The phase mask coherent photolithography was used to fabricate the nanocrystalline periodic gratings with half less period than the mask plate. In this part, we focus on the analysis of the reasons why large area periodic gratings cannot be produced. It is mainly due to the difficulty of perfectly sticking the mask to the substrate at the nanometer level and the difficulty of incident light incident vertically from the back of the mask by fixing the position between the mask and the sample by manual placement. The fourth part is the simulation part. We use comsol software to simulate the field strength behind the mask. First, we fix the period of the mask plate and adjust its etching depth to find the best etching depth when the period is fixed. Then we simulate the period of the mask at 位 (?) 2 位 (?) For the period of mask plate, 位 is the wavelength of incident light, and the optimum etching depth is obtained when the period of the mask plate varies in the range of the wavelength of incident light. Finally, the etching depth of the mask is fixed, and the field intensity distribution behind the mask is simulated when the period of the mask is in three different regions: (?) 位, (?) ~ 位 and 位 (?) _ 2 位, respectively. We find that when the period of the mask plate is close to 1.5 位, the field strength obtained at the optimum etching depth is the best. The closer the period of the mask plate is to 位 or 2 位, the worse the field intensity is. Even the period can not reduce the general field strength compared with the mask plate. This may be due to the fact that when the period of the mask plate is close to 1.5 位, the diffraction light of 卤1 order is relatively strong, and the diffraction light of order 0 and above order 2 is relatively weak. When the period of mask plate is close to 位, the period of light field is the same as that of mask plate, and there is a phenomenon that the field intensity intersects between layers. This may be due to the fact that when the period of mask plate is close to 位, the light field period of the mask plate is similar to that of the mask plate. The proportion of 0-order diffraction light in all diffractive light is increased, and it interacts with 卤1-order diffraction light, but when the period of mask plate is close to 2 位, the light field is chaotic. This may be because the 卤2 order diffraction is also involved in the interference. The fifth part is the summary and prospect of the work done in this paper.
【学位授予单位】：南京大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN305.7
[Abstract]:The technology of microelectronics and micromachining has been developing rapidly since the 1960s. Lithography is one of their core technologies and the most precise method in semiconductor surface processing. In this paper, the fabrication process of nanocrystalline grating by phase-mask coherent photolithography is introduced, including the following parts: the first part is the introduction part, the development background and significance of lithography technology are briefly introduced. And the principle and process of nano-imprint. The second part is the theoretical introduction, which briefly introduces the theoretical basis of phase mask coherent photolithography. It is pointed out that in order to successfully fabricate the grating pattern with half less period than the mask plate, only 卤1 order diffraction light interference must be guaranteed. Because the diffraction light of 卤2 order becomes the surface evanescent wave, it is more important to suppress the 0-order diffraction light. In this part, we also introduce two methods to adjust the duty cycle of grating pattern, namely, exposure development method and shaded deposition method. The third part is the experimental part. The phase mask coherent photolithography was used to fabricate the nanocrystalline periodic gratings with half less period than the mask plate. In this part, we focus on the analysis of the reasons why large area periodic gratings cannot be produced. It is mainly due to the difficulty of perfectly sticking the mask to the substrate at the nanometer level and the difficulty of incident light incident vertically from the back of the mask by fixing the position between the mask and the sample by manual placement. The fourth part is the simulation part. We use comsol software to simulate the field strength behind the mask. First, we fix the period of the mask plate and adjust its etching depth to find the best etching depth when the period is fixed. Then we simulate the period of the mask at 位 (?) 2 位 (?) For the period of mask plate, 位 is the wavelength of incident light, and the optimum etching depth is obtained when the period of the mask plate varies in the range of the wavelength of incident light. Finally, the etching depth of the mask is fixed, and the field intensity distribution behind the mask is simulated when the period of the mask is in three different regions: (?) 位, (?) ~ 位 and 位 (?) _ 2 位, respectively. We find that when the period of the mask plate is close to 1.5 位, the field strength obtained at the optimum etching depth is the best. The closer the period of the mask plate is to 位 or 2 位, the worse the field intensity is. Even the period can not reduce the general field strength compared with the mask plate. This may be due to the fact that when the period of the mask plate is close to 1.5 位, the diffraction light of 卤1 order is relatively strong, and the diffraction light of order 0 and above order 2 is relatively weak. When the period of mask plate is close to 位, the period of light field is the same as that of mask plate, and there is a phenomenon that the field intensity intersects between layers. This may be due to the fact that when the period of mask plate is close to 位, the light field period of the mask plate is similar to that of the mask plate. The proportion of 0-order diffraction light in all diffractive light is increased, and it interacts with 卤1-order diffraction light, but when the period of mask plate is close to 2 位, the light field is chaotic. This may be because the 卤2 order diffraction is also involved in the interference. The fifth part is the summary and prospect of the work done in this paper.
【学位授予单位】：南京大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN305.7
【共引文献】
相关期刊论文 前5条
1 吴修娟;曾永彬;曲宁松;王玉峰;朱荻;;基于Ag纳米线的微纳电解加工研究[J];电加工与模具;2014年01期
2 孟岭超;曾永彬;曲宁松;朱荻;;碳纳米管工具电极的导电性能[J];光学精密工程;2014年03期
3 陈帅;邱颖霞;魏晓e，
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