SOI SA-LIGBT中负阻效应的机理和新结构研究
发布时间：2018-11-07 08:56
【摘要】：常规SOI基阳极短路横向绝缘栅双极晶体管(SA-LIGBT)提高了LIGBT的关断速度,但常规SOI SA-LIGBT存在负阻效应。而负阻效应增大了SA-LIGBT的功耗,降低了器件的跨导和线性性。为了抑制负阻效应,本论文在深入分析SA-LIGBT负阻效应产生的基础上,提出了两种新型LIGBT,具体研究结果如下:(1)提出具有阳极P型埋层(P-Buired-Layer Anode side)横向绝缘栅双极晶体管(PBLA-LIGBT)。较常规SA-LIGBT结构,PBLA-LIGBT在其阳极新添加一个P型电荷区。新结构通过新加入的P型电荷区增长了电子电流的路径,进而通过减小阳极N区电子通道的宽度,提高了阳极P区下方路径的电阻值Rp,抑制了SA-LIGBT的负阻效应。论文还对新结构的输出特性、击穿特性、关断特性进行了分析,仿真结果表明:新结构PBLA-LIGBT在抑制负阻效应和提高关断速度的情况下,耐压达到226V,且新结构具有制造工艺简单,流片成本低的优点。(2)提出具有阳极弱反型层(Anode Weak Inversion Layer)横向绝缘栅双极晶体管(AWIL-LIGBT)。新结构在常规SA-LIGBT的阳极区引入一个反型区。新结构的技术特点在于,基于弱反型所形成的高电阻,使阳极P+/N-buffer结在小的多子电流下实现导通,阳极P+区中的空穴可以更早的注入漂移区,从而消除负阻效应。通过与常规SA-LIGBT对比研究,仿真结果表明:新结构在关断速度不变的同时击穿电压提升了111V(约56%)的情况下,消除了常规阳极短路LIGBT在导通过程中出现的负阻效应。
[Abstract]:Conventional SOI based anode short circuit transverse insulated gate bipolar transistor (SA-LIGBT) improves the turn-off speed of LIGBT, but the conventional SOI SA-LIGBT has negative resistance effect. The negative resistance effect increases the power consumption of SA-LIGBT and reduces the transconductance and linearity of the device. In order to suppress the negative resistance effect, based on the in-depth analysis of the negative resistance effect of SA-LIGBT, two new types of LIGBT, are proposed in this paper. The results are as follows: (1) A novel anodic P-type buried layer (P-Buired-Layer Anode side) transversely insulated gate bipolar transistor (PBLA-LIGBT) is proposed. Compared with the conventional SA-LIGBT structure, PBLA-LIGBT adds a new P-type charge region to its anode. The new structure increases the path of electron current through the new P-type charge region, and then increases the resistance value Rp, of the path under the anode P region by reducing the width of the electron channel in the N region of the anode, thus suppressing the negative resistance effect of SA-LIGBT. The output characteristics, breakdown characteristics and turn-off characteristics of the new structure are also analyzed. The simulation results show that the new structure PBLA-LIGBT can withstand the voltage of 226V under the condition of suppressing the negative resistance effect and increasing the turn-off speed. The new structure has the advantages of simple fabrication process and low cost of the wafer. (2) A novel transversely insulated gate bipolar transistor (AWIL-LIGBT) with anodic weak inversion layer (Anode Weak Inversion Layer) is proposed. The new structure introduces a reverse region in the anode region of conventional SA-LIGBT. The technical characteristic of the new structure is that the anode P / N-buffer junction can be switched on at a small polyton current based on the high resistance formed by the weak inversion type, and the hole in the anode P region can be injected into the drift region earlier, thus eliminating the negative resistance effect. By comparing with conventional SA-LIGBT, the simulation results show that the new structure can eliminate the negative resistance effect of conventional anodic short circuit LIGBT in the process of conduction by increasing the breakdown voltage by 111 V (about 56%) at the same time when the turn-off speed is constant.
【学位授予单位】：南京邮电大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN322.8
本文编号：2315837
[Abstract]:Conventional SOI based anode short circuit transverse insulated gate bipolar transistor (SA-LIGBT) improves the turn-off speed of LIGBT, but the conventional SOI SA-LIGBT has negative resistance effect. The negative resistance effect increases the power consumption of SA-LIGBT and reduces the transconductance and linearity of the device. In order to suppress the negative resistance effect, based on the in-depth analysis of the negative resistance effect of SA-LIGBT, two new types of LIGBT, are proposed in this paper. The results are as follows: (1) A novel anodic P-type buried layer (P-Buired-Layer Anode side) transversely insulated gate bipolar transistor (PBLA-LIGBT) is proposed. Compared with the conventional SA-LIGBT structure, PBLA-LIGBT adds a new P-type charge region to its anode. The new structure increases the path of electron current through the new P-type charge region, and then increases the resistance value Rp, of the path under the anode P region by reducing the width of the electron channel in the N region of the anode, thus suppressing the negative resistance effect of SA-LIGBT. The output characteristics, breakdown characteristics and turn-off characteristics of the new structure are also analyzed. The simulation results show that the new structure PBLA-LIGBT can withstand the voltage of 226V under the condition of suppressing the negative resistance effect and increasing the turn-off speed. The new structure has the advantages of simple fabrication process and low cost of the wafer. (2) A novel transversely insulated gate bipolar transistor (AWIL-LIGBT) with anodic weak inversion layer (Anode Weak Inversion Layer) is proposed. The new structure introduces a reverse region in the anode region of conventional SA-LIGBT. The technical characteristic of the new structure is that the anode P / N-buffer junction can be switched on at a small polyton current based on the high resistance formed by the weak inversion type, and the hole in the anode P region can be injected into the drift region earlier, thus eliminating the negative resistance effect. By comparing with conventional SA-LIGBT, the simulation results show that the new structure can eliminate the negative resistance effect of conventional anodic short circuit LIGBT in the process of conduction by increasing the breakdown voltage by 111 V (about 56%) at the same time when the turn-off speed is constant.
【学位授予单位】：南京邮电大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN322.8
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