FS结构的3300V IGBT终端设计
发布时间：2018-11-10 18:21
【摘要】：IGBT自诞生以来就以其优异的性能和广阔的应用前景激励着一代又一代工程师进行探索和研究。截至目前为止,高压IGBT的核心技术仍然掌握在国外少数几家公司手中。国内由于起步晚、工艺能力薄弱等原因一直处于追赶状态。对于高压IGBT而言,结终端的设计对于器件的耐压以及可靠性都有重要的意义。本文的主要工作就是设计出一种适用于3300V FS IGBT的终端结构。1、首先分析了功率器件的击穿原理以及主流终端结构的耐压机制,综合比较了各种终端结构的优势和不足。结合代工厂的工艺条件,最终选定了场限环结合双级场板这种终端结构进行设计。2、和代工厂协商制定工艺制造流程,仿真优化得到终端的各项基本参数。并且在设计的过程中选择了两种不同的表面电场分布进行设计对比。在此基础上,结合代工厂给定的版图设计规则制定版图方案,完成了版图的绘制,并交由代工厂流片。3、对流片回来的芯片进行测试,击穿电压达到4000V以上,满足3300V的设计目标。此外,我们挑选出一部分静态测试参数较好的器件进行高温反偏考核。考核结果显示,采用三角形电场分布的终端结构的可靠性要优于均匀电场分布的终端结构。因此,我们所提出的三角形电场分布终端是一种更为优化的终端结构。
[Abstract]:Since its birth, IGBT has inspired generations of engineers to explore and research with its excellent performance and broad application prospects. So far, the core technology of high-voltage IGBT is still in the hands of a few foreign companies. Domestic due to late start, weak process capacity and other reasons have been in catch-up state. For high voltage IGBT, the design of junction terminal is of great significance to the voltage resistance and reliability of the device. The main work of this paper is to design a terminal structure suitable for 3300V FS IGBT. 1. Firstly, the breakdown principle of power device and the voltage withstand mechanism of mainstream terminal structure are analyzed, and the advantages and disadvantages of various terminal structures are comprehensively compared. Combined with the process conditions of the manufacturing plant, the field limiting ring combined with the two-stage field plate is finally selected to design the terminal structure. 2. In consultation with the manufacturer, the process manufacturing process is worked out, and the basic parameters of the terminal are obtained by simulation and optimization. In the process of design, two different surface electric field distributions are selected and compared. On this basis, combined with the layout design rules given by the manufacturer, the layout scheme was worked out, and the layout drawing was completed, and the chip returned from the chip was transferred to the factory. The chip returned from the convection chip was tested, and the breakdown voltage reached more than 4000 V. Meet the design goal of 3300V. In addition, we select some devices with better static test parameters for high temperature reverse bias test. The results show that the terminal structure with triangular electric field distribution is more reliable than that with uniform electric field distribution. Therefore, the triangular electric field distribution terminal proposed by us is a more optimized terminal structure.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN322.8
本文编号：2323242
[Abstract]:Since its birth, IGBT has inspired generations of engineers to explore and research with its excellent performance and broad application prospects. So far, the core technology of high-voltage IGBT is still in the hands of a few foreign companies. Domestic due to late start, weak process capacity and other reasons have been in catch-up state. For high voltage IGBT, the design of junction terminal is of great significance to the voltage resistance and reliability of the device. The main work of this paper is to design a terminal structure suitable for 3300V FS IGBT. 1. Firstly, the breakdown principle of power device and the voltage withstand mechanism of mainstream terminal structure are analyzed, and the advantages and disadvantages of various terminal structures are comprehensively compared. Combined with the process conditions of the manufacturing plant, the field limiting ring combined with the two-stage field plate is finally selected to design the terminal structure. 2. In consultation with the manufacturer, the process manufacturing process is worked out, and the basic parameters of the terminal are obtained by simulation and optimization. In the process of design, two different surface electric field distributions are selected and compared. On this basis, combined with the layout design rules given by the manufacturer, the layout scheme was worked out, and the layout drawing was completed, and the chip returned from the chip was transferred to the factory. The chip returned from the convection chip was tested, and the breakdown voltage reached more than 4000 V. Meet the design goal of 3300V. In addition, we select some devices with better static test parameters for high temperature reverse bias test. The results show that the terminal structure with triangular electric field distribution is more reliable than that with uniform electric field distribution. Therefore, the triangular electric field distribution terminal proposed by us is a more optimized terminal structure.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN322.8
【参考文献】
相关期刊论文 前1条
1 武祥;;我国IGBT的产业现状和发展[J];电子工业专用设备;2012年12期
，本文编号：2323242
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