S波段线性射频功率放大器设计
发布时间：2018-11-12 11:25
【摘要】：功率放大器是微波射频通信系统中必不可少的单元,功放性能直接会影响到发射机的性能。尤其在无线通信飞速发展的今天,使得无线通信系统对功率放大器提出来更高的要求,高效率、高功率、宽带、线性化等等。为此本文结合当今通信系统的要求,设计了一款S波段宽带线性射频功率放大器。本文第一章先对功放的研究背景和线性化技术发展现状进行总结。第二章中先对射频功放的种类进行列举并简单的分析了每种放大器的工作原理同时对放大器的主要指标进行了简要介绍。随后介绍了几种功放的线性化技术并简单分析了每种线性化技术的特点。在了解功放及其线性化技术的基本概念后,第三章中主要介绍了宽带射频功放的原理,在分析了功率放大器的匹配网络后对射频功率放大器的方案进行分析,最终本文采取的方案是匹配网络补偿方案,两级级联的方式实现。采用ADL5321芯片作为驱动级放大器对输入信号进行驱动以满足末级放大器对输入功率的要求;末级输出功率放大器采用CREE的CGH40010 GaN管子,为了保证线性同时兼顾效率,将末级PA偏置在AB类状态。根据器件官方给定的参数和模型进行ADS仿真。仿真包括对功放管的工作点、输入/输出的阻抗分析和匹配网络的设计尤其采用微带线的形式实现。在仿真完成后又介绍绘制PCB板的一些问题,例如电源电路的设计,PCB板布局布线的一些规则,以及散热片的设计经过调试后此功率放大器工作频段覆盖2.4GHz到3.6GHz,相对带宽高达40%。输出功率为33dBm。在第四章中对PA的线性化方法进行简单介绍,本文采用的线性化方法是模拟预失真。在对三种模拟预失真结构进行分析和仿真后得出每种结构对于本文设计的功放的线性化程度,经过对比发现带有偏置的单个二极管预失真网络能够适应宽带射频功率放大器,在中心频率为3.0GHz,频偏50MHz时,有效补偿了17dB的三阶交调失真;带T型网络的反向并联二极管网络虽然能够适应宽带功率放大器,但是存在较大的功率衰减;带有电桥的复合型反向并联肖特基二极管网络虽然能够起到较好的线性补偿,但是不能适应宽带功率放大器。
[Abstract]:Power amplifier is an essential unit in microwave RF communication system. The performance of power amplifier will directly affect the performance of transmitter. Especially in the rapid development of wireless communication today, wireless communication systems put forward higher requirements for power amplifiers, high efficiency, high power, broadband, linearization and so on. In order to meet the requirements of today's communication system, a S-band linear RF power amplifier is designed. The first chapter summarizes the research background of power amplifier and the development of linearization technology. In the second chapter, the types of RF power amplifier are listed and the working principle of each amplifier is simply analyzed. At the same time, the main parameters of the amplifier are briefly introduced. Then several linearization techniques of power amplifier are introduced and the characteristics of each linearization technique are analyzed. After understanding the basic concept of power amplifier and its linearization technology, the third chapter mainly introduces the principle of broadband RF power amplifier, and analyzes the scheme of RF power amplifier after analyzing the matching network of power amplifier. Finally, the scheme adopted in this paper is matching network compensation scheme, two-stage cascade implementation. The ADL5321 chip is used as the driving stage amplifier to drive the input signal to meet the requirement of input power of the last stage amplifier. The last stage output power amplifier uses CGH40010 GaN tube of CREE. In order to guarantee the linearity and the efficiency, the last stage PA is biased in the AB class state. The ADS simulation is carried out according to the given parameters and models of the device. The simulation includes the operation point of power amplifier, the impedance analysis of input / output and the design of matching network, especially in the form of microstrip line. After the simulation is finished, some problems of drawing PCB board are introduced, such as the design of power supply circuit, the rules of layout and wiring of PCB board, and the design of the radiator. After debugging, the working frequency band of the power amplifier covers 2.4GHz to 3.6 GHz. The relative bandwidth is up to 40. The output power is 33dBm. In chapter 4, the linearization method of PA is briefly introduced. The linearization method used in this paper is analogue predistortion. After the analysis and simulation of three analog predistortion structures, the linearization degree of each structure for the power amplifier designed in this paper is obtained. After comparison, it is found that the single diode predistortion network with bias can adapt to the wideband RF power amplifier. When the center frequency is 3.0 GHz and the frequency offset is 50MHz, the third order Intermodulation distortion of 17dB is effectively compensated. The reverse parallel diode network with T-type network can adapt to wideband power amplifier, but it has large power attenuation. Although the composite parallel Schottky diode network with bridge has better linear compensation, it can not adapt to broadband power amplifier.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN722.75
本文编号：2326970
[Abstract]:Power amplifier is an essential unit in microwave RF communication system. The performance of power amplifier will directly affect the performance of transmitter. Especially in the rapid development of wireless communication today, wireless communication systems put forward higher requirements for power amplifiers, high efficiency, high power, broadband, linearization and so on. In order to meet the requirements of today's communication system, a S-band linear RF power amplifier is designed. The first chapter summarizes the research background of power amplifier and the development of linearization technology. In the second chapter, the types of RF power amplifier are listed and the working principle of each amplifier is simply analyzed. At the same time, the main parameters of the amplifier are briefly introduced. Then several linearization techniques of power amplifier are introduced and the characteristics of each linearization technique are analyzed. After understanding the basic concept of power amplifier and its linearization technology, the third chapter mainly introduces the principle of broadband RF power amplifier, and analyzes the scheme of RF power amplifier after analyzing the matching network of power amplifier. Finally, the scheme adopted in this paper is matching network compensation scheme, two-stage cascade implementation. The ADL5321 chip is used as the driving stage amplifier to drive the input signal to meet the requirement of input power of the last stage amplifier. The last stage output power amplifier uses CGH40010 GaN tube of CREE. In order to guarantee the linearity and the efficiency, the last stage PA is biased in the AB class state. The ADS simulation is carried out according to the given parameters and models of the device. The simulation includes the operation point of power amplifier, the impedance analysis of input / output and the design of matching network, especially in the form of microstrip line. After the simulation is finished, some problems of drawing PCB board are introduced, such as the design of power supply circuit, the rules of layout and wiring of PCB board, and the design of the radiator. After debugging, the working frequency band of the power amplifier covers 2.4GHz to 3.6 GHz. The relative bandwidth is up to 40. The output power is 33dBm. In chapter 4, the linearization method of PA is briefly introduced. The linearization method used in this paper is analogue predistortion. After the analysis and simulation of three analog predistortion structures, the linearization degree of each structure for the power amplifier designed in this paper is obtained. After comparison, it is found that the single diode predistortion network with bias can adapt to the wideband RF power amplifier. When the center frequency is 3.0 GHz and the frequency offset is 50MHz, the third order Intermodulation distortion of 17dB is effectively compensated. The reverse parallel diode network with T-type network can adapt to wideband power amplifier, but it has large power attenuation. Although the composite parallel Schottky diode network with bridge has better linear compensation, it can not adapt to broadband power amplifier.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN722.75
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