MIM冷阴极制备及其特性研究
发布时间：2018-11-15 17:33
【摘要】：金属-绝缘体-金属(MIM)型阴极是内场致发射阴极的一种,具有体积小、不用预热、低噪声、工作电压低、对真空度要求不高等优点。这种阴极结构整体厚度一般不超过1μm,是纳米级薄膜工艺,在薄膜电子器件和低功率真空器件上具有很大的应用前景和研究价值。本文从薄膜的表征入手,采用不同的工艺来制备MIM阴极,测试阴极的发射性能,并分析影响发射性能的因素,本文主要研究内容如下:(1)以Al-Al2O3-Au阴极结构为研究对象,采用反应溅射和阳极氧化两种不同的方法制备绝缘层Al2O3,并不断优化其工艺参数。经过多次试验,在直流溅射以15W功率沉积20s的Au薄膜用作顶电极具有最好的电子发射能力;在1Pa压强下,以Ar:O2为100sccm:25sccm、经功率为100W反应溅射1小时制备的Al2O3用作绝缘层耐压强度为18V左右;在5wt%的葵二酸铵的乙二醇溶液中经150V阳极氧化12小时制备的绝缘层具有27V左右的耐压强度,用作MIM绝缘层使阴极面积为9mm2的单阵列发射电流最大达到116.5μA,电流密度为1.29mA/cm2。(2)采用PMMA(聚甲基丙烯酸甲酯)法转移石墨烯薄膜来替代顶电极Au,通过测试转移一至四层石墨烯的样品,发现转移四层石墨烯薄膜的样品发射性能优于转移一至三层的样品,但仍不如Au用作顶电极的发射性能好,认为可能与石墨烯的生长质量、转移质量、衬底的粗糙度等有关。(3)对大面积MIM阴极阵列展开应用研究,通过荧光屏对制备的2×2阵列、3×3阵列和14×11阵列阴极进行测试,从荧光屏图像来看,在实验室工艺条件下制备的多阵列阴极发射不够均匀。随着阴极制备的面积逐步增大,发射电流密度有所减小。其中,总阴极面积为1.54cm2的14×11阵列最大电流密度为180.7μA/cm2。通过优化制备工艺和设备可以改善阴极发射性能,使其在低功率、低噪声电子源中得到实际应用。
[Abstract]:Metal insulator-metal (MIM) cathode is one of the inner field emission cathodes, which has the advantages of small volume, no preheating, low noise, low working voltage and low vacuum requirement. The overall thickness of the cathode structure is not more than 1 渭 m, which is a nanoscale thin film process. It has great application prospect and research value in thin film electronic devices and low power vacuum devices. In this paper, MIM cathodes are prepared by different processes, the emission properties of the cathode are tested, and the factors affecting the emission performance are analyzed. The main contents of this paper are as follows: (1) taking the structure of Al-Al2O3-Au cathode as the research object, the insulating layer Al2O3, was prepared by reactive sputtering and anodic oxidation, and its process parameters were optimized. After many experiments, the Au film deposited at 15 W power for 20 s has the best electron emission ability as the top electrode. Under the pressure of 1Pa, the Al2O3 prepared by 100W reactive sputtering for 1 hour with Ar:O2 of 100sccm: 25sccm was used as the insulating layer with a voltage of about 18V. The insulation layer prepared by 150 V anodic oxidation for 12 hours in 5 wt% ammonium phthalate ethylene glycol solution has a voltage resistance of about 27 V, and the maximum emission current of a single array with cathode area of 9mm2 is up to 116.5 渭 A when it is used as an insulating layer for MIM. The current density is 1.29 Ma / cm ~ (2). (2) PMMA (polymethyl methacrylate) method is used to transfer graphene films to replace the top electrode Au, samples that transfer one to four layers of graphene by testing. It was found that the emission properties of the transferred four layers graphene film were better than that of the transfer one to three layers sample, but not as good as that of Au as the top electrode. It was considered that the transfer quality and growth quality of the transfer film might be related to the growth quality of graphene. The roughness of substrate is related to. (3) the application of large area MIM cathode array is studied. The cathode of 2 脳 2 array, 3 脳 3 array and 14 脳 11 array are tested by the fluorescent screen. The emission of multi-array cathode is not uniform enough under the condition of laboratory process. The emission current density decreases with the increase of cathode preparation area. The maximum current density of 14 脳 11 arrays with a total cathode area of 1.54cm2 is 180.7 渭 A / cm ~ 2. The cathode emission performance can be improved by optimizing the preparation process and equipment, which can be applied in low power and low noise electronic sources.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN103
本文编号：2333978
[Abstract]:Metal insulator-metal (MIM) cathode is one of the inner field emission cathodes, which has the advantages of small volume, no preheating, low noise, low working voltage and low vacuum requirement. The overall thickness of the cathode structure is not more than 1 渭 m, which is a nanoscale thin film process. It has great application prospect and research value in thin film electronic devices and low power vacuum devices. In this paper, MIM cathodes are prepared by different processes, the emission properties of the cathode are tested, and the factors affecting the emission performance are analyzed. The main contents of this paper are as follows: (1) taking the structure of Al-Al2O3-Au cathode as the research object, the insulating layer Al2O3, was prepared by reactive sputtering and anodic oxidation, and its process parameters were optimized. After many experiments, the Au film deposited at 15 W power for 20 s has the best electron emission ability as the top electrode. Under the pressure of 1Pa, the Al2O3 prepared by 100W reactive sputtering for 1 hour with Ar:O2 of 100sccm: 25sccm was used as the insulating layer with a voltage of about 18V. The insulation layer prepared by 150 V anodic oxidation for 12 hours in 5 wt% ammonium phthalate ethylene glycol solution has a voltage resistance of about 27 V, and the maximum emission current of a single array with cathode area of 9mm2 is up to 116.5 渭 A when it is used as an insulating layer for MIM. The current density is 1.29 Ma / cm ~ (2). (2) PMMA (polymethyl methacrylate) method is used to transfer graphene films to replace the top electrode Au, samples that transfer one to four layers of graphene by testing. It was found that the emission properties of the transferred four layers graphene film were better than that of the transfer one to three layers sample, but not as good as that of Au as the top electrode. It was considered that the transfer quality and growth quality of the transfer film might be related to the growth quality of graphene. The roughness of substrate is related to. (3) the application of large area MIM cathode array is studied. The cathode of 2 脳 2 array, 3 脳 3 array and 14 脳 11 array are tested by the fluorescent screen. The emission of multi-array cathode is not uniform enough under the condition of laboratory process. The emission current density decreases with the increase of cathode preparation area. The maximum current density of 14 脳 11 arrays with a total cathode area of 1.54cm2 is 180.7 渭 A / cm ~ 2. The cathode emission performance can be improved by optimizing the preparation process and equipment, which can be applied in low power and low noise electronic sources.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN103
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