一种高精度低温度系数带隙基准源
发布时间：2018-11-18 14:00
【摘要】：通过相同材料电阻的比值来抵消带隙基准源的一阶温度系数来达到低温度系数,同时还设计了修调电路进一步提高基准电压的精度。采用0.8μm BiCMOS 9V工艺流片,带隙基准源面积为0.035 mm~2。结果表明:在-40℃~125℃范围内,基准电压的温度系数为11×10~(-6)/℃;电源电压在4.5 V~9.0 V范围内变化时,基准电压的变化量为0.4 m V,电源调整率为0.09 m V/V。
[Abstract]:The first order temperature coefficient of the bandgap reference source is offset by the ratio of the same material resistance to achieve the low temperature coefficient. At the same time, the correction circuit is designed to further improve the precision of the reference voltage. Using 0.8 渭 m BiCMOS 9V flow sheet, the bandgap reference area is 0.035 mm~2.. The results show that the temperature coefficient of the reference voltage is 11 脳 10 ~ (-6) / 鈩，
本文编号：2340231
[Abstract]:The first order temperature coefficient of the bandgap reference source is offset by the ratio of the same material resistance to achieve the low temperature coefficient. At the same time, the correction circuit is designed to further improve the precision of the reference voltage. Using 0.8 渭 m BiCMOS 9V flow sheet, the bandgap reference area is 0.035 mm~2.. The results show that the temperature coefficient of the reference voltage is 11 脳 10 ~ (-6) / 鈩，
本文编号：2340231
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