W波段宽带分谐波混频器
发布时间：2018-11-18 21:01
【摘要】：混频器作为毫米波收发系统中的关键器件,其工作的带宽、变频损耗等都对整个系统的性能有着非常重要的影响。对于拓展接收机的工作频带而言,研制具有较宽射频工作带宽的混频器就具有非常重要的研究意义。同时,相较于基波混频器而言,谐波混频器因其本振端的工作频率只为射频工作频率的二分之一、三分之一、四分之一等,对于本振源的研制来说降低了要求。在这种情况下,宽带分谐波混频器将是重要的研究方向。本文设计的W波段宽带分谐波混频器采用了反向并联结构,通过金属化过孔接地的方式将UMS公司的肖特基势垒二极管DBES105a反向并联于微带传输线。通过波导到微带的过渡结构使射频和本振信号馈入至微带,再通过微带加载至反向并联二极管对上。本振信号通过射频端的波导截止特性实现隔离;而射频信号对于本振端而言,则通过CMRC结构的低通滤波器实现射频信号与本振端口的隔离。射频信号通过波导至微带的过渡之后,通过微带的扇形匹配枝节实现射频端与二极管的匹配。本振端与二极管对的匹配则由CMRC低通滤波器及其相移网络实现。经过混频得到的中频信号再通过包含扇形枝节的低通滤波器传输至K接头输出。对于二极管对而言,在分析比较传统的二极管建模设计方法的基础上,通过分析肖特基二极管的结构,在HFSS中建立了DBES105a的简化三维模型。管芯用准线性等效的方式,通过对比测试与模型的仿真曲线提取了针对于射频信号和本振信号而言不同的两组二极管参数。再针对两组不同参数通过反复迭代的方式,设计射频端和本振端的匹配。通过HFSS软件的仿真优化,实现了射频端在75~110GHz波段全频段内回波损耗大于10dB,本振端在40~50GHz内回波损耗大于10dB的目标。为了测试需要,采用CHX2193、AMMC5040、M4AE1317以及TGA4522芯片,设计完成了U波段八倍频器的研制并进行了相应测试。最后针对研制的混频器进行测试,在本振频率为46.25GHz时,输入功率为9dBm时,射频信号在75~108GHz内变频损耗小于15dB,其中在88~102GHz内变频损耗小于11dB。
[Abstract]:As a key device in millimeter-wave transceiver system, mixer has a very important influence on the performance of the whole system, such as bandwidth and frequency conversion loss. It is of great significance to develop a mixer with wide RF bandwidth for expanding the operating band of the receiver. At the same time, compared with the fundamental mixer, the harmonic mixer reduces the requirement for the development of the local oscillator because the operating frequency of the local oscillator is only 1/2, 1/3, 1/4 of the RF operating frequency. In this case, broadband subharmonic mixer will be an important research direction. The W band broadband subharmonic mixer designed in this paper adopts the reverse parallel structure. The Schottky barrier diode (DBES105a) of UMS company is inversely parallel to the microstrip transmission line by metallizing through the hole. The RF and local oscillator signals are fed into the microstrip through the transition structure from the waveguide to the microstrip, and then loaded into the reverse parallel diode pair through the microstrip. The local oscillator signal is isolated by the waveguide cutoff characteristic of the radio frequency terminal, and the radio frequency signal is isolated from the local oscillator port by the low pass filter of the CMRC structure. After the transition from the waveguide to the microstrip, the RF signal is matched with the diode by the sector matching branch of the microstrip. The matching between local oscillator and diode pair is realized by CMRC low pass filter and its phase shifting network. The intermediate frequency signal obtained by mixing is then transmitted to the K-joint output through a low-pass filter containing sector branches. For diode pairs, based on the analysis and comparison of traditional diode modeling and design methods, the simplified three-dimensional model of DBES105a is established in HFSS by analyzing the structure of Schottky diode. By using quasilinear equivalent method, two sets of diode parameters for RF signal and local oscillator signal are extracted by comparing the test results with the simulation curves of the model. Then the matching between the RF and the local oscillator is designed for the two groups of different parameters by iterative method. Through the simulation optimization of HFSS software, the echo loss of RF terminal in 75~110GHz band is greater than 10 dB, and the return loss of local oscillator end in 40~50GHz is greater than that of 10dB. In order to meet the test requirements, the U-band octave frequency multiplier is designed and tested using CHX2193,AMMC5040,M4AE1317 and TGA4522 chips. Finally, when the local oscillator frequency is 46.25GHz and the input power is 9dBm, the frequency conversion loss of RF signal in 75~108GHz is less than 15 dB, and the frequency conversion loss in 88~102GHz is less than 11 dB.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN773
，
本文编号：2341218
[Abstract]:As a key device in millimeter-wave transceiver system, mixer has a very important influence on the performance of the whole system, such as bandwidth and frequency conversion loss. It is of great significance to develop a mixer with wide RF bandwidth for expanding the operating band of the receiver. At the same time, compared with the fundamental mixer, the harmonic mixer reduces the requirement for the development of the local oscillator because the operating frequency of the local oscillator is only 1/2, 1/3, 1/4 of the RF operating frequency. In this case, broadband subharmonic mixer will be an important research direction. The W band broadband subharmonic mixer designed in this paper adopts the reverse parallel structure. The Schottky barrier diode (DBES105a) of UMS company is inversely parallel to the microstrip transmission line by metallizing through the hole. The RF and local oscillator signals are fed into the microstrip through the transition structure from the waveguide to the microstrip, and then loaded into the reverse parallel diode pair through the microstrip. The local oscillator signal is isolated by the waveguide cutoff characteristic of the radio frequency terminal, and the radio frequency signal is isolated from the local oscillator port by the low pass filter of the CMRC structure. After the transition from the waveguide to the microstrip, the RF signal is matched with the diode by the sector matching branch of the microstrip. The matching between local oscillator and diode pair is realized by CMRC low pass filter and its phase shifting network. The intermediate frequency signal obtained by mixing is then transmitted to the K-joint output through a low-pass filter containing sector branches. For diode pairs, based on the analysis and comparison of traditional diode modeling and design methods, the simplified three-dimensional model of DBES105a is established in HFSS by analyzing the structure of Schottky diode. By using quasilinear equivalent method, two sets of diode parameters for RF signal and local oscillator signal are extracted by comparing the test results with the simulation curves of the model. Then the matching between the RF and the local oscillator is designed for the two groups of different parameters by iterative method. Through the simulation optimization of HFSS software, the echo loss of RF terminal in 75~110GHz band is greater than 10 dB, and the return loss of local oscillator end in 40~50GHz is greater than that of 10dB. In order to meet the test requirements, the U-band octave frequency multiplier is designed and tested using CHX2193,AMMC5040,M4AE1317 and TGA4522 chips. Finally, when the local oscillator frequency is 46.25GHz and the input power is 9dBm, the frequency conversion loss of RF signal in 75~108GHz is less than 15 dB, and the frequency conversion loss in 88~102GHz is less than 11 dB.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN773
，
本文编号：2341218
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