二维原子半导体的制备及其异质器件研究

发布时间：2018-11-19 09:58

【摘要】：近年来,二维原子半导体材料一直备受关注,尤其是石墨烯,因为它优异的电学和光学性质,吸引了无数科学家对它在光电子器件应用上的研究,但是石墨烯零禁带的缺点却严重制约了它在这方面的发展。为了解决这个问题,许多学者不断研究其它优异的二维原子材料的制备方法及其应用,同时,开始探索有效打开石墨烯带隙的方法。基于此,本文主要提出了两种性能出众的二维原子材料--碳化硅和二硫化钼的制备方法,指出了它们在光电探测器等光电器件领域的应用前景,同时,本文还探索了利用硅掺杂的方式来打开石墨烯带隙的方法。本论文的具体工作如下:(1)研究了利用硅片和甲烷在高温下反应宏量制备二维超薄碳化硅的方法,为之后合成二维碳化硅材料提供了一个新思路。(2)利用液态硅源实现对石墨烯的有效硅掺杂,提出了一种硅掺杂石墨烯的新方法,同时,在反应过程中,由于液态硅源与石墨烯能够充分接触混合,使得合成大面积硅掺杂石墨烯的反应更加充足。通过总结提高利用化学气相沉积法制备硅掺杂石墨烯的硅掺杂含量,由此进一步打开石墨烯能带的方法,我们为后续工作提供了新方向。(3)采用化学气相沉积法制备出大面积的薄层和单层的二硫化钼,利用二硫化钼/氮化镓异质结制备了一种性能优异的宽频谱光电探测器,其响应度和探测度分别可以达到10A/W和3.8×1010cm·Hz1/2/W,说明了二硫化钼在应用于紫外光电探测领域仍有很大的发展潜力。
[Abstract]:In recent years, two-dimensional atomic semiconductor materials have attracted much attention, especially graphene, because of its excellent electrical and optical properties, which have attracted numerous scientists to study its applications in optoelectronic devices. However, the defect of zero gap band of graphene seriously restricts its development in this field. In order to solve this problem, many scholars have been studying the preparation methods of other excellent two-dimensional atomic materials and their applications. At the same time, many scholars have begun to explore effective methods to open the graphene band gap. Based on this, two kinds of excellent two dimensional atomic materials, silicon carbide and molybdenum disulfide, are proposed in this paper, and their application prospects in photoelectric devices such as photodetectors are pointed out. The method of using silicon doping to open the graphene band gap is also explored in this paper. The main work of this thesis is as follows: (1) the method of preparing two-dimensional ultra-thin silicon carbide by using silicon wafer and methane at high temperature was studied. It provides a new idea for the synthesis of two-dimensional silicon carbide materials. (2) effective silicon doping for graphene is realized by using liquid silicon source. A new method of silicon doped graphene is proposed. At the same time, in the process of reaction, Because the liquid silicon source and graphene can be fully contacted and mixed, the synthesis of large area silicon doped graphene is more sufficient. The methods of improving the silicon doping content of silicon doped graphene by chemical vapor deposition were summarized, and the graphene energy band was further opened. We provide a new direction for further work. (3) large area thin layer and monolayer molybdenum disulfide were prepared by chemical vapor deposition, and a wide spectrum photodetector with excellent performance was prepared by using molybdenum disulfide / gallium nitride heterojunction. The responsivity and detectability of molybdenum disulfide can reach 10A/W and 3.8 脳 1010cm Hz1/2/W, respectively. It shows that molybdenum disulfide still has great potential in the field of UV photoelectric detection.
【学位授予单位】：浙江大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN304

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