激光退火在硅基光电探测器中的应用

发布时间：2018-11-20 06:14

【摘要】：分别对p-i-n和n-i-p两种结构的硅基光电探测器的背面离子注入层进行激光退火处理,辐照功率分别为0.5、1、1.25和1.5J/cm~2。根据激光退火激活载流子模式计算了载流子激活率,获得了载流子浓度和接触电阻的变化量。通过对比器件的电学和光学性能,发现采用1.5J/cm~2的激光,离子注入方式得到的硼离子和磷离子的激活率达到75.0%和92.6%,使得p-i-n和n-i-p结构器件的背接触电阻分别从未退火的22.3Ω和15.89Ω降低至7.32Ω和7.63Ω,显著改善了硅基光电探测器的正向特性。在100mV反向偏压下激光退火至少降低了10%的暗电流,并增强p-i-n结构峰值处约1%的光谱响应和n-i-p结构峰值处约5%的光谱响应。
[Abstract]:The backside ion implantation layers of silicon based photodetectors with p-i-n and n-i-p structures were annealed by laser. The irradiating power of the two kinds of silicon based photodetectors was 0.5 1 / 1.25 and 1. 5 J / cm ~ (2), respectively. The carrier activation rate is calculated according to the mode of laser annealing and the variation of carrier concentration and contact resistance is obtained. By comparing the electrical and optical properties of the device, it is found that the activation rates of boron ion and phosphorus ion obtained by 1.5J/cm~2 laser and ion implantation are 75.0% and 92.6%, respectively. The back contact resistance of p-i-n and n-i-p structure is reduced from 22.3 惟 and 15.89 惟 to 7.32 惟 and 7.63 惟, respectively, which improves the forward characteristics of silicon based photodetectors. Laser annealing at 100mV reverse bias decreases at least 10% of the dark current and enhances the spectral response of about 1% at the peak of the p-i-n structure and about 5% at the peak value of the n-i-p structure.
【作者单位】：北京工业大学光电子器件研究室;
【基金】：国家自然科学基金项目(61222501,61335004) 高等学校博士学科点专项科研基金项目(20111103110019)
【分类号】：TN36

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