石墨烯场效应晶体管的输运特性
发布时间：2018-11-21 17:40
【摘要】：石墨烯场效应晶体管的研究对于摩尔定律的延续具有非常重要的意义.近年来,大面积、高质量石墨烯薄膜制备技术的快速发展,进一步推动了基于石墨烯材料的新型电子器件的研究,引起了集成电路领域研究人员的广泛关注.本文所制备的石墨烯场效应晶体管以ITO为栅电极,Ta_2O_5为栅绝缘层,石墨烯为有源层,Ti/Au双层金属为源漏电极.电学特性测试与分析结果表明,石墨烯与源漏电极形成了良好的欧姆接触.室温下,石墨烯场效应晶体管展示了其特有的双极性特征,空穴迁移率约为2272 cm2/(V s),电流开关比约为6.2.转移特性曲线中出现了明显的滞回现象,且随着栅压扫描范围的增大而越发显著.同时研究了温度对石墨烯场效应晶体管性能的影响,随着温度的升高,狄拉克点电压逐渐向零点方向偏移,滞回现象愈加明显.当温度为75℃时,空穴迁移率与电流开关达到最佳.
[Abstract]:The study of graphene field effect transistors is of great significance for the continuation of Moore's law. In recent years, the rapid development of large area and high quality graphene thin film preparation technology has further promoted the research of new electronic devices based on graphene materials, which has attracted wide attention in the field of integrated circuits. In this paper, the graphene field effect transistors are fabricated using ITO as gate electrode, Ta_2O_5 as gate insulation layer, graphene as active layer and Ti/Au bilayer metal as source leakage electrode. The results of electrical properties test and analysis show that graphene has a good ohmic contact with the source leakage electrode. At room temperature, graphene field-effect transistors exhibit their unique bipolar characteristics, with a hole mobility of about 2272 cm2/ (V s), current-switching ratio of 6.2. The hysteretic phenomenon appeared in the transfer characteristic curve and became more and more obvious with the increase of the scanning range of gate voltage. At the same time, the effect of temperature on the performance of graphene field-effect transistors is studied. With the increase of temperature, the Dirac point voltage gradually shifts to zero, and the hysteresis phenomenon becomes more and more obvious. When the temperature is 75 鈩，
本文编号：2347744
[Abstract]:The study of graphene field effect transistors is of great significance for the continuation of Moore's law. In recent years, the rapid development of large area and high quality graphene thin film preparation technology has further promoted the research of new electronic devices based on graphene materials, which has attracted wide attention in the field of integrated circuits. In this paper, the graphene field effect transistors are fabricated using ITO as gate electrode, Ta_2O_5 as gate insulation layer, graphene as active layer and Ti/Au bilayer metal as source leakage electrode. The results of electrical properties test and analysis show that graphene has a good ohmic contact with the source leakage electrode. At room temperature, graphene field-effect transistors exhibit their unique bipolar characteristics, with a hole mobility of about 2272 cm2/ (V s), current-switching ratio of 6.2. The hysteretic phenomenon appeared in the transfer characteristic curve and became more and more obvious with the increase of the scanning range of gate voltage. At the same time, the effect of temperature on the performance of graphene field-effect transistors is studied. With the increase of temperature, the Dirac point voltage gradually shifts to zero, and the hysteresis phenomenon becomes more and more obvious. When the temperature is 75 鈩，
本文编号：2347744
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