一种高PSRR无电阻带隙基准源
发布时间：2018-11-24 17:16
【摘要】：设计了一种高电源抑制比(PSRR)、低温漂的无电阻带隙基准源。在传统无电阻带隙基准电压源的基础上引入反馈环路,实现了对电压的箝制,减小了沟道长度调制效应和失调电压,提高了带隙基准源的PSRR。引入正温度补偿电路,减小了带隙基准源的温度系数。采用TSMC 0.18μm CMOS工艺对电路进行了仿真。结果表明,在3 V工作电压下,在低频下带隙基准源的PSRR为-65 d B,在-25℃~125℃温度范围内的温度系数为3.72×10~(-5)/℃。
[Abstract]:A resistive bandgap reference source with high power suppression ratio (PSRR),) low temperature drift is designed. Based on the traditional resistive band-gap reference source, feedback loop is introduced to realize the clamping of the voltage, reduce the channel length modulation effect and offset voltage, and improve the PSRR. of the bandgap reference source. A positive temperature compensation circuit is introduced to reduce the temperature coefficient of the bandgap reference. The circuit is simulated by TSMC 0.18 渭 m CMOS process. The results show that at 3 V operating voltage, the PSRR of the bandgap reference is -65 dB at low frequency, and the temperature coefficient is 3.72 脳 10 ~ (-5) / 鈩，
本文编号：2354448
[Abstract]:A resistive bandgap reference source with high power suppression ratio (PSRR),) low temperature drift is designed. Based on the traditional resistive band-gap reference source, feedback loop is introduced to realize the clamping of the voltage, reduce the channel length modulation effect and offset voltage, and improve the PSRR. of the bandgap reference source. A positive temperature compensation circuit is introduced to reduce the temperature coefficient of the bandgap reference. The circuit is simulated by TSMC 0.18 渭 m CMOS process. The results show that at 3 V operating voltage, the PSRR of the bandgap reference is -65 dB at low frequency, and the temperature coefficient is 3.72 脳 10 ~ (-5) / 鈩，
本文编号：2354448
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