基于表面等离子体的超分辨光刻技术研究
发布时间：2018-11-24 19:53
【摘要】：光刻是制备集成电路及其他微纳器件过程中最关键的环节。而传统光刻技术受光学衍射的影响,始终无法突破?/2的衍射极限,这严重限制了光学分辨率的提升,并成为微纳加工领域发展的巨大障碍。近些年来,诸多可以克服衍射极限的新型光刻技术已经蓬勃发展。其中,表面等离子体光刻技术因其波长短、局域性强等特性成为了研究超分辨光刻技术的热点。本论文主要针对表面等离子体的超分辨光刻技术进行了研究。论文的主要工作和结论如下:1、首先分析了传统光刻技术的优缺点,讨论了光刻技术的发展历史和发展新型光刻技术的必要性。分析了表面等离子体光刻技术的现状,并在其基础上,提出了基于PDMS软掩模的表面等离子体光刻技术。2、探索了表面等离子体的相关基本理论,研究了边界效应和耦合效应光刻技术的内在机理,介绍了本论文所采用的数值计算方法。3、建立了传统边界效应和表面等离子体边界效应的两种光刻模型,利用时域有限差分法商用软件Opti-FDTD对光刻模型进行了仿真计算,并对比分析了两种边界效应的电场分布,确定了基于表面等离子体边界效应的光刻技术具有更高的分辨率和对比度,可实现超分辨成像。通过对表面等离子体边界效应光刻结构参数的优化,进一步增强了表面等离子体边界效应。根据实验条件,开展了相关边界效应的光刻实验。结果表明,利用线条宽度为18μm的掩模结构制备出特征尺寸小于2μm的光刻图形。4、建立了光耦合效应和表面等离子体耦合效应的两种光刻模型,并对两种光刻模型进行了仿真计算。通过对电场能量分布的对比分析,确定了表面等离子体耦合效应的光刻技术在分辨率、对比度和传播深度三个方面有明显的提升。通过对表面等离子体耦合效应光刻结构参数的调制,解决了边界效应无法控制特征尺寸、难以制备多样化图形的问题。最终模拟实现了特征尺寸仅为?/10、对比度高达0.99的超分辨成像。
[Abstract]:Photolithography is the most important step in the fabrication of integrated circuits and other micro-nano devices. Because of the influence of optical diffraction, the traditional lithography technology can not break through the diffraction limit of? / 2, which seriously limits the improvement of optical resolution and becomes a great obstacle to the development of micro / nano machining field. In recent years, many new lithography techniques which can overcome the diffraction limit have been developed rapidly. Among them, surface plasma lithography technology has become a hotspot for its short wavelength and strong locality. In this thesis, the surface plasma superresolution lithography technology has been studied. The main work and conclusions are as follows: 1. Firstly, the advantages and disadvantages of traditional lithography technology are analyzed, and the development history of lithography technology and the necessity of developing new lithography technology are discussed. The current situation of surface plasma lithography is analyzed, and on the basis of it, the surface plasma lithography technology based on PDMS soft mask is proposed. 2. The basic theory of surface plasma lithography is explored. The intrinsic mechanism of boundary effect and coupling effect lithography is studied, and the numerical calculation method used in this paper is introduced. 3. Two lithography models of traditional boundary effect and surface plasma boundary effect are established. The simulation of the lithography model is carried out by using the commercial software Opti-FDTD of the finite-difference time-domain method, and the electric field distribution of the two boundary effects is compared and analyzed. It is determined that the lithography technology based on the boundary effect of surface plasma has higher resolution and contrast, and can realize super-resolution imaging. The surface plasma boundary effect is further enhanced by optimizing the structure parameters of the surface plasma boundary effect. According to the experimental conditions, the lithography experiments of the related boundary effects are carried out. The results show that the photolithographic patterns with characteristic size less than 2 渭 m are prepared by using the mask structure with a width of 18 渭 m. 4. Two lithographic models of the coupling effect and the coupling effect of surface plasma are established. Two lithography models are simulated and calculated. By comparing and analyzing the energy distribution of the electric field, it is determined that the lithography technology of the coupling effect of surface plasma has obvious improvement in three aspects: resolution, contrast and propagation depth. By modulating the structural parameters of surface plasma coupling lithography, the problem that the boundary effect can not control the characteristic size and make various shapes is solved. Finally, the simulation results show that the feature size is only? / 10 and the contrast is as high as 0.99.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN405
本文编号：2354834
[Abstract]:Photolithography is the most important step in the fabrication of integrated circuits and other micro-nano devices. Because of the influence of optical diffraction, the traditional lithography technology can not break through the diffraction limit of? / 2, which seriously limits the improvement of optical resolution and becomes a great obstacle to the development of micro / nano machining field. In recent years, many new lithography techniques which can overcome the diffraction limit have been developed rapidly. Among them, surface plasma lithography technology has become a hotspot for its short wavelength and strong locality. In this thesis, the surface plasma superresolution lithography technology has been studied. The main work and conclusions are as follows: 1. Firstly, the advantages and disadvantages of traditional lithography technology are analyzed, and the development history of lithography technology and the necessity of developing new lithography technology are discussed. The current situation of surface plasma lithography is analyzed, and on the basis of it, the surface plasma lithography technology based on PDMS soft mask is proposed. 2. The basic theory of surface plasma lithography is explored. The intrinsic mechanism of boundary effect and coupling effect lithography is studied, and the numerical calculation method used in this paper is introduced. 3. Two lithography models of traditional boundary effect and surface plasma boundary effect are established. The simulation of the lithography model is carried out by using the commercial software Opti-FDTD of the finite-difference time-domain method, and the electric field distribution of the two boundary effects is compared and analyzed. It is determined that the lithography technology based on the boundary effect of surface plasma has higher resolution and contrast, and can realize super-resolution imaging. The surface plasma boundary effect is further enhanced by optimizing the structure parameters of the surface plasma boundary effect. According to the experimental conditions, the lithography experiments of the related boundary effects are carried out. The results show that the photolithographic patterns with characteristic size less than 2 渭 m are prepared by using the mask structure with a width of 18 渭 m. 4. Two lithographic models of the coupling effect and the coupling effect of surface plasma are established. Two lithography models are simulated and calculated. By comparing and analyzing the energy distribution of the electric field, it is determined that the lithography technology of the coupling effect of surface plasma has obvious improvement in three aspects: resolution, contrast and propagation depth. By modulating the structural parameters of surface plasma coupling lithography, the problem that the boundary effect can not control the characteristic size and make various shapes is solved. Finally, the simulation results show that the feature size is only? / 10 and the contrast is as high as 0.99.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN405
【参考文献】
相关期刊论文 前2条
1 尚宝月;杨绍斌;;TiO_2自组装膜的制备及抗菌性能研究[J];化工新型材料;2010年08期
2 张斗国,王沛,焦小瑾,唐麟,鲁拥华,明海;表面等离子体亚波长光学前沿进展[J];物理;2005年07期
，本文编号：2354834
本文链接：https://www.wllwen.com/kejilunwen/dianzigongchenglunwen/2354834.html
