基于蒙特卡洛的CMOS电路节能设计方法
发布时间：2018-11-25 18:27
【摘要】：针对CMOS电路状态转换试验中诸多无用转换导致异常能耗问题。提出一种基于蒙特卡洛的CMOS电路节能设计方法。计算CMOS电路无时延平均功耗与有时延平均功耗之间的切换规律,计算电路功耗最低值,将最低值对应的状态转换时间设置为蒙特卡洛推算中的变量,通过蒙特卡洛推算调整状态的转换次数,降低动态能耗和状态转换过程中的能量消耗。通过实验证明,所提方法对CMOS电路节能设计效果较好,能够有效地降低大型CMOS电路能耗。
[Abstract]:In order to solve the problem of abnormal energy consumption caused by many useless transitions in state transition test of CMOS circuits. A method of energy saving design for CMOS circuit based on Monte Carlo is presented. The switching law between the delay free average power and the delay average power consumption in CMOS circuits is calculated, the minimum power consumption is calculated, and the state transition time corresponding to the minimum value is set to be the variable in Monte Carlo calculation. In order to reduce the dynamic energy consumption and the energy consumption in the process of state transition, Monte Carlo is used to calculate the number of state conversion. The experimental results show that the proposed method is effective in energy saving design of CMOS circuits and can effectively reduce the energy consumption of large CMOS circuits.
【作者单位】： 华北理工大学附属医院信息科;
【分类号】：TN432
本文编号：2357031
[Abstract]:In order to solve the problem of abnormal energy consumption caused by many useless transitions in state transition test of CMOS circuits. A method of energy saving design for CMOS circuit based on Monte Carlo is presented. The switching law between the delay free average power and the delay average power consumption in CMOS circuits is calculated, the minimum power consumption is calculated, and the state transition time corresponding to the minimum value is set to be the variable in Monte Carlo calculation. In order to reduce the dynamic energy consumption and the energy consumption in the process of state transition, Monte Carlo is used to calculate the number of state conversion. The experimental results show that the proposed method is effective in energy saving design of CMOS circuits and can effectively reduce the energy consumption of large CMOS circuits.
【作者单位】： 华北理工大学附属医院信息科;
【分类号】：TN432
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，本文编号：2357031
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