超低功耗FS-IGBT研究
发布时间：2018-11-26 08:04
【摘要】：电导调制效应的存在使得IGBT器件具有非常低的导通压降和导通损耗,但这也使得其关断损耗较大,因此导通压降和关断损耗之间的矛盾关系已成为低功耗IGBT设计过程中最主要的难题。为了改善IGBT器件导通压降和关断损耗之间的折中关系,以实现超低功耗IGBT器件设计,本文提出了以下两种新型FS-IGBT结构:1、提出了一种具有深槽分裂栅的载流子存储型IGBT器件(Carrier-Stored Trench Bipolar Transistor with a Split-Gate and a Deep-Trench,SGDT CSTBT),其特征为发射极一侧具有深槽和分裂栅结构。在关断状态下,深槽分裂栅结构可以有效地辅助耗尽载流子存储层,使其所在结面处的电场峰值降低,从而缓解因高掺杂载流子存储层引起的耐压退化问题,使CSTBT器件能够更好地发挥载流子存储效果,以获得更低的导通压降;同时,阶梯状槽型结构可以调制体内电场而提高器件的耐压。仿真结果表明,SGDT CSTBT可以使器件在N型载流子存储层浓度提升到5×1017cm-3的情况下仍然能够维持1521V的高耐压水平;同时,与传统CSTBT相比,新结构可以在相同的关断损耗下导通压降下降48.1%;此外,尽管采用了深槽结构,但结合分裂栅使得新结构具有与传统CSTBT一样的密勒电容,因此不会对器件的开关特性造成明显的影响。最后,本文还针对SGDT CSTBT提出了一种可行的工艺方案。2、提出了一种具有电子阻挡层的短路阳极IGBT器件(Shorted Anode Lateral IGBT with Electron Barrier Layer,EB-SA LIGBT),其结构特征为集电极区有P+电子阻挡层和N-高阻通道。通过在集电极区引入电子阻挡层和高阻通道,有效增加集电极PN结附近的等效电阻,使得器件能够在较小的单极电流下进入双极导电模式,从而抑制器件的电压回跳现象,提高器件工作时的稳定性。仿真结果表明,与传统SA LIGBT和SSA LIGBT相比,新结构在集电极区的表面积仅为“4μm×8μm”时就能完全抑制器件的电压回跳现象;同时,与同能抑制电压回跳现象的SSA LIGBT相比,新结构在相同的关断损耗下,其导通压降下降了52.4%。最后,本文还提供了一种可行的EB-SA LIGBT工艺制造方案。
[Abstract]:The existence of conductance modulation effect makes IGBT devices have very low on-voltage drop and on-on loss, but it also makes the turn-off loss larger. Therefore, the contradiction between on-voltage drop and turn-off loss has become the most important problem in the design of low-power IGBT. In order to improve the tradeoff relationship between on-voltage drop and turn-off loss of IGBT devices and realize the design of ultra-low power IGBT devices, two new types of FS-IGBT structures are proposed in this paper: 1. A carrier memory type IGBT device (Carrier-Stored Trench Bipolar Transistor with a Split-Gate and a Deep-Trench,SGDT CSTBT),) with deep slot splitter gate is proposed, which is characterized by deep slot and split gate structures on the emitter side. Under turn-off condition, the deep groove-splitting gate structure can effectively assist the depletion of the carrier storage layer, reduce the peak electric field at the junction surface, and alleviate the problem of voltage degradation caused by the highly doped carrier storage layer. The CSTBT device can make better use of the carrier storage effect to obtain lower on-pressure drop. At the same time, the ladder groove structure can modulate the internal electric field and improve the voltage resistance of the device. The simulation results show that, SGDT CSTBT can maintain the high voltage level of 1521V even when the concentration of N-type carrier layer increases to 5 脳 1017cm-3. At the same time, compared with the traditional CSTBT, the new structure can reduce the on-off pressure drop by 48.1% under the same turn-off loss. In addition, although the deep groove structure is used, the new structure has the same Miller capacitance as the traditional CSTBT, so it has no obvious effect on the switching characteristics of the device. Finally, a feasible process scheme for SGDT CSTBT is proposed. 2. A short-circuit anode IGBT device (Shorted Anode Lateral IGBT with Electron Barrier Layer,EB-SA LIGBT), with electronic barrier layer is proposed. The structure is characterized by P electron barrier layer and N-high resistance channel in the collector region. By introducing an electron barrier layer and a high resistance channel in the collector region, the equivalent resistance near the collector PN junction is effectively increased, which enables the device to enter the bipolar conduction mode at a relatively small unipolar current, so as to suppress the voltage bouncing phenomenon of the device. The stability of the device is improved. The simulation results show that compared with the traditional SA LIGBT and SSA LIGBT, the new structure can completely suppress the voltage bouncing phenomenon when the surface area of the collector is only "4 渭 m 脳 8 渭 m". At the same time, compared with the SSA LIGBT, which can restrain the voltage bounce phenomenon, the on-voltage drop of the new structure decreases by 52.4% under the same turn-off loss. Finally, a feasible EB-SA LIGBT process manufacturing scheme is provided.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN322.8
本文编号：2357893
[Abstract]:The existence of conductance modulation effect makes IGBT devices have very low on-voltage drop and on-on loss, but it also makes the turn-off loss larger. Therefore, the contradiction between on-voltage drop and turn-off loss has become the most important problem in the design of low-power IGBT. In order to improve the tradeoff relationship between on-voltage drop and turn-off loss of IGBT devices and realize the design of ultra-low power IGBT devices, two new types of FS-IGBT structures are proposed in this paper: 1. A carrier memory type IGBT device (Carrier-Stored Trench Bipolar Transistor with a Split-Gate and a Deep-Trench,SGDT CSTBT),) with deep slot splitter gate is proposed, which is characterized by deep slot and split gate structures on the emitter side. Under turn-off condition, the deep groove-splitting gate structure can effectively assist the depletion of the carrier storage layer, reduce the peak electric field at the junction surface, and alleviate the problem of voltage degradation caused by the highly doped carrier storage layer. The CSTBT device can make better use of the carrier storage effect to obtain lower on-pressure drop. At the same time, the ladder groove structure can modulate the internal electric field and improve the voltage resistance of the device. The simulation results show that, SGDT CSTBT can maintain the high voltage level of 1521V even when the concentration of N-type carrier layer increases to 5 脳 1017cm-3. At the same time, compared with the traditional CSTBT, the new structure can reduce the on-off pressure drop by 48.1% under the same turn-off loss. In addition, although the deep groove structure is used, the new structure has the same Miller capacitance as the traditional CSTBT, so it has no obvious effect on the switching characteristics of the device. Finally, a feasible process scheme for SGDT CSTBT is proposed. 2. A short-circuit anode IGBT device (Shorted Anode Lateral IGBT with Electron Barrier Layer,EB-SA LIGBT), with electronic barrier layer is proposed. The structure is characterized by P electron barrier layer and N-high resistance channel in the collector region. By introducing an electron barrier layer and a high resistance channel in the collector region, the equivalent resistance near the collector PN junction is effectively increased, which enables the device to enter the bipolar conduction mode at a relatively small unipolar current, so as to suppress the voltage bouncing phenomenon of the device. The stability of the device is improved. The simulation results show that compared with the traditional SA LIGBT and SSA LIGBT, the new structure can completely suppress the voltage bouncing phenomenon when the surface area of the collector is only "4 渭 m 脳 8 渭 m". At the same time, compared with the SSA LIGBT, which can restrain the voltage bounce phenomenon, the on-voltage drop of the new structure decreases by 52.4% under the same turn-off loss. Finally, a feasible EB-SA LIGBT process manufacturing scheme is provided.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN322.8
【参考文献】
相关期刊论文 前4条
1 ;世界半导体市场发展大势[J];电子产品世界;2015年06期
2 齐跃;汪志刚;陈万军;张波;;A high performance carrier stored trench bipolar transistor with a field-modified P-base region[J];Journal of Semiconductors;2013年04期
3 马荣耀;李泽宏;洪辛;张波;;Carrier stored trench-gate bipolar transistor with p-floating layer[J];半导体学报;2010年02期
4 张波;功率半导体技术的发展浪起潮涌[J];世界产品与技术;2002年02期
，本文编号：2357893
本文链接：https://www.wllwen.com/kejilunwen/dianzigongchenglunwen/2357893.html
