延伸波长InGaAs探测器台面刻蚀工艺研究

发布时间：2018-11-26 14:25

【摘要】：短波红外In Ga As探测器具有室温工作、探测率高等优点,在空间观测、环境监测以及军事领域等具有广泛的应用前景。基于短波红外In Ga As探测器的应用要求,本论文主要围绕延伸波长In Ga As探测器制备的台面刻蚀工艺以及刻蚀损伤展开研究,以进一步提高延伸波长In Ga As焦平面探测器的性能。采用正交设计实验的方法研究低物理刻蚀作用的Cl2/N2 ICP刻蚀工艺参数,对刻蚀速率和表面形貌进行的分析,获得的工艺条件为:温度170℃,Cl2:N2=10:30 sccm、ICP功率500W、RF功率160W、6m T条件下,刻蚀表面平滑。利用初步优化工艺参数和原工艺参数下进行器件验证,分析了器件的I-V曲线以及暗电流密度和温度的关系等,发现初步优化参数下器件的暗电流没有明显改善,初步分析是由于刻蚀后选择的参数过程中没有考虑刻蚀损伤如直流偏压等参数,导致电学性能不够理想,后续会进一步开展研究。正交试验设计的方法研究了Cl2/CH4/H2刻蚀延伸波长In Ga As探测器工艺参数,分别采用原子力显微镜(AFM)和扫描电子显微镜(SEM)测量了刻蚀样品的表面粗糙度和台阶高度及形貌,获得了表面的粗糙度和选择性刻蚀比。在选定了工艺参数范围后又进行了一组正方实验,同样分析了SEM和AFM图像,初步获得了优化的工艺条件:60℃,ICP功率1800 W,RF功率75 W,气压4 m T,此条件下的DC偏压为132 V,粗糙度比较小,且台面的垂直度较好。引入导电AFM(C-AFM)表征新方法,分析了延伸波长探测器材料的表面缺陷,测试得到了微区的电流-电压曲线,并研究材料表面微区漏电流与器件电学特性的关系,分析了暗电流密度的主要成分,验证了C-AFM结果的可靠性,这为实验分析获得优化工艺条件提供有效依据,在提升器件性能方面起到一定的作用。
[Abstract]:Shortwave infrared In Ga As detectors have been widely used in space observation, environmental monitoring and military applications due to their advantages of working at room temperature and high detectability. Based on the application requirements of short wave infrared In Ga As detectors, this paper mainly focuses on the bench etching technology and etching damage of extended wavelength In Ga As detectors. In order to further improve the performance of extended wavelength In Ga As focal plane detector. The process parameters of Cl2/N2 ICP etching with low physical etching were studied by orthogonal design method. The etching rate and surface morphology were analyzed. The process conditions were obtained as follows: temperature 170 鈩，

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