碳化硅MOSFET器件动态参数测量及其影响因素的研究
发布时间：2018-12-11 04:05
【摘要】：碳化硅以其出色的材料特性受到人们的广泛关注,随着研究的不断深入,基于碳化硅材料的新型半导体器件也相继问世,其中碳化硅功率MOSFET具有更低的导通电阻,更高的极限工作温度,更快的开关频率,因此具有更好的发展前景。作为开关器件,在实际应用中碳化硅功率MOSFET器件需要频繁的进行开通和关断,而目前对于碳化硅功率MOSFET器件的开关方式仍以硬开关为主,因此器件的开关损耗问题就很突出；另一方面,在开关过程中,电压电流变化幅度巨大,在电路寄生参数的影响下会出现电压电流过冲,造成器件击穿,给系统运行带来严重的后果。本文结合国家电网智能电网研究院的"1200V SiC MOSFET器件制备及应用特性关键技术研究”项目,以碳化硅MOSFET的动态参数测试为出发点,建立了LTspice仿真,用仿真分析方法探究了驱动电阻、栅极杂散电感、温度和负载特性对碳化硅MOSFET器件动态参数的影响,重点分析了开通关断时间和电压过冲对上述影响因素的响应情况。同时,搭建了碳化硅MOSFET器件动态参数测试平台,用实验的方法探究了阻性负载和感性负载对于碳化硅MOSFET动态参数的影响；另外,在特定条件下进行测试实验,与仿真结果形成对比,验证了仿真电路的准确性。本文所做工作为碳化硅MOSFET器件的动态过程研究提供了可靠的仿真分析方法和实验测试平台。
[Abstract]:Silicon carbide has attracted extensive attention for its outstanding material properties. With the development of research, new semiconductor devices based on silicon carbide have been developed, among which silicon carbide power MOSFET has lower on-resistance. Higher limit operating temperature, faster switching frequency, so has a better development prospects. As switch devices, silicon carbide power MOSFET devices need to be turned on and off frequently in practical applications, but the switch mode of silicon carbide power MOSFET devices is still hard switch, so the switch loss problem is very prominent. On the other hand, in the process of switching, the voltage and current change greatly, under the influence of the parasitic parameters of the circuit, voltage and current overshoot will occur, resulting in device breakdown, which will bring serious consequences to the operation of the system. In this paper, combining with the project of "Research on the key Technologies of 1200V SiC MOSFET device Fabrication and Application characteristics" of the State Power Grid Smart Grid Research Institute, and taking the dynamic parameter test of sic MOSFET as the starting point, the LTspice simulation is established. The effects of driving resistance, gate stray inductance, temperature and load characteristics on the dynamic parameters of silicon carbide MOSFET devices are investigated by means of simulation analysis. The response of turn-on time and voltage overshoot to the above factors are emphatically analyzed. At the same time, the dynamic parameters testing platform of silicon carbide MOSFET device is built, and the influence of resistive load and inductive load on the dynamic parameters of silicon carbide MOSFET is investigated by the method of experiment. In addition, the experimental results are compared with the simulation results, and the accuracy of the simulation circuit is verified. The work in this paper provides a reliable simulation analysis method and experimental test platform for the study of dynamic process of silicon carbide MOSFET devices.
【学位授予单位】：华北电力大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386
本文编号：2371830
[Abstract]:Silicon carbide has attracted extensive attention for its outstanding material properties. With the development of research, new semiconductor devices based on silicon carbide have been developed, among which silicon carbide power MOSFET has lower on-resistance. Higher limit operating temperature, faster switching frequency, so has a better development prospects. As switch devices, silicon carbide power MOSFET devices need to be turned on and off frequently in practical applications, but the switch mode of silicon carbide power MOSFET devices is still hard switch, so the switch loss problem is very prominent. On the other hand, in the process of switching, the voltage and current change greatly, under the influence of the parasitic parameters of the circuit, voltage and current overshoot will occur, resulting in device breakdown, which will bring serious consequences to the operation of the system. In this paper, combining with the project of "Research on the key Technologies of 1200V SiC MOSFET device Fabrication and Application characteristics" of the State Power Grid Smart Grid Research Institute, and taking the dynamic parameter test of sic MOSFET as the starting point, the LTspice simulation is established. The effects of driving resistance, gate stray inductance, temperature and load characteristics on the dynamic parameters of silicon carbide MOSFET devices are investigated by means of simulation analysis. The response of turn-on time and voltage overshoot to the above factors are emphatically analyzed. At the same time, the dynamic parameters testing platform of silicon carbide MOSFET device is built, and the influence of resistive load and inductive load on the dynamic parameters of silicon carbide MOSFET is investigated by the method of experiment. In addition, the experimental results are compared with the simulation results, and the accuracy of the simulation circuit is verified. The work in this paper provides a reliable simulation analysis method and experimental test platform for the study of dynamic process of silicon carbide MOSFET devices.
【学位授予单位】：华北电力大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386
【参考文献】
相关期刊论文 前1条
1 杜子椺;;浅析电力电子技术的发展与应用[J];课程教育研究;2013年24期
，本文编号：2371830
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