4 inch低位错密度InP单晶的VGF生长及性质研究
发布时间：2018-12-13 17:38
【摘要】：采用高压垂直温度梯度凝固法(VGF)生长了非掺、掺硫和掺铁的4 inch直径(100)InP单晶,获得的单晶的平均位错密度均小于5000 cm~(-2)。对4 inch InP晶片上进行多点X-射线双晶衍射测试,其(004)X-射线双晶衍射峰的半峰宽约为30弧秒且分布均匀。与液封直拉法(LEC)相比,VGF-InP单晶生长过程的温度梯度很低,导致其孪晶出现的几率显著增加。然而大量晶体生长结果表明VGF-InP晶锭上出现孪晶后,通常晶体的生长方向仍为(100)方向,这确保从生长的4 inch VGF-InP(100)晶锭上仍能获得相当数量的2~4 inch(100)晶片。由于铁在InP中的分凝系数很小,掺Fe-InP单晶VGF生长过程中容易出现组份过冷,导致多晶生长。通过控制生长温度梯度及掺铁量,可获得较高的掺铁InP单晶成晶率。对VGF-InP单晶的电学性质、位错密度及位错的分布特点、晶体完整性等进行了研究。
[Abstract]:The 4 inch diameter (100) InP single crystals without doping, sulfur and iron were grown by high pressure vertical temperature gradient solidification method (VGF). The average dislocation density was less than 5000 cm~ (-2). The multipoint X ray double crystal diffraction measurements on 4 inch InP wafer show that the half width of (004) X ray double crystal diffraction peak is about 30 arc seconds and the distribution is uniform. Compared with the liquid-sealed Czochralski (LEC) method, the temperature gradient in the growth process of VGF-InP single crystal is very low, which leads to a significant increase in the probability of twin appearance. However, a large number of crystal growth results show that after twins appear on VGF-InP ingot, the growth direction of the crystal is still (100) direction, which ensures that a considerable number of 2 inch (100) wafers can still be obtained from the grown 4 inch VGF-InP (100) ingot. Due to the small segregation coefficient of iron in InP, the component undercooling is easy to occur during the growth of Fe-InP doped single crystal VGF, which leads to polycrystalline growth. By controlling the growth temperature gradient and the amount of iron doped, a higher crystallinity of Fe-doped InP single crystal can be obtained. The electrical properties, dislocation density, dislocation distribution and crystal integrity of VGF-InP single crystals were investigated.
【作者单位】： 中国科学院半导体研究所中国科学院半导体材料科学重点实验室低维半导体材料与器件北京市重点实验室;中国科学院大学材料科学与光电技术学院;
【分类号】：TN304
，
本文编号：2376948
[Abstract]:The 4 inch diameter (100) InP single crystals without doping, sulfur and iron were grown by high pressure vertical temperature gradient solidification method (VGF). The average dislocation density was less than 5000 cm~ (-2). The multipoint X ray double crystal diffraction measurements on 4 inch InP wafer show that the half width of (004) X ray double crystal diffraction peak is about 30 arc seconds and the distribution is uniform. Compared with the liquid-sealed Czochralski (LEC) method, the temperature gradient in the growth process of VGF-InP single crystal is very low, which leads to a significant increase in the probability of twin appearance. However, a large number of crystal growth results show that after twins appear on VGF-InP ingot, the growth direction of the crystal is still (100) direction, which ensures that a considerable number of 2 inch (100) wafers can still be obtained from the grown 4 inch VGF-InP (100) ingot. Due to the small segregation coefficient of iron in InP, the component undercooling is easy to occur during the growth of Fe-InP doped single crystal VGF, which leads to polycrystalline growth. By controlling the growth temperature gradient and the amount of iron doped, a higher crystallinity of Fe-doped InP single crystal can be obtained. The electrical properties, dislocation density, dislocation distribution and crystal integrity of VGF-InP single crystals were investigated.
【作者单位】： 中国科学院半导体研究所中国科学院半导体材料科学重点实验室低维半导体材料与器件北京市重点实验室;中国科学院大学材料科学与光电技术学院;
【分类号】：TN304
，
本文编号：2376948
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