基于纳米压印刻蚀Si-PIN探测器的仿真研究

发布时间：2018-12-14 18:32

【摘要】：晶体硅材料具有易提纯、易掺杂等特点,且相关技术发展非常成熟,因而在半导体器件应用中得到了广泛的应用。但是,由于晶体硅的高反射率和直接带隙特点,使传统硅基光电探测器灵敏度低且不能探测近红外光。伴随光电行业的发展,纳米光子学的应用越来越广泛,光电子器件的特征尺寸越来越小,图形的复杂化程度也逐步提升。纳米压印刻蚀以其不受光刻波长限制、分辨率高、图形制作灵活、生产效率高等优势,成为微纳米制造领域最受关注的研究热点之一。本文以此为背景,对基于纳米压印刻蚀的新型Si-PIN光电探测器进行仿真研究,并在后期结合原理性器件的研制,进行了探测器功能特性的初期验证研究。本文采用纳米压印刻蚀工艺制备硅纳米孔柱阵列表面微结构,结合硅材料的元素掺杂能带改性,在半导体物理和器件物理等计算的基础上,对新型探测器的结构进行了计算和设计,并利用Silvaco TCAD软件对其进行了仿真研究,考察了新型光电探测器光电特性,最终将仿真优化结果用于指导器件的实际加工。基于具有能带改性的硅纳米孔柱阵列,Si-PIN光电探测器仿真结果表明:(1)新型探测器的峰值响应相较传统探测器有少许红移,峰值从980 nm移到1100 nm,量子效率43.80%,峰值响应度达到0.39 A/W;在1060 nm处,量子效率42.11%、响应度0.36 A/W。(2)新型探测器的暗电流和响应时间分别为0.54nA和7 ns,与传统探测器性能参数基本一致。最后,本文针对正照式Si-PIN单元探测器制备的工艺流程,在P层采用纳米压印刻蚀,制备基于硅纳米孔柱阵列的正照式Si-PIN原理性器件并进行功能验证,结果表明,在400 nm~1100 nm宽光谱范围内,新型探测器的响应度得到明显提高,且在1060 nm处的响应度较传统器件提高了67%。
[Abstract]:Crystal silicon has been widely used in semiconductor devices due to its advantages of easy purification and doping, and the development of related technology is very mature. However, because of its high reflectivity and direct band gap, traditional silicon based photodetectors have low sensitivity and can not detect near-infrared light. With the development of optoelectronic industry, the application of nano-photonics is more and more extensive, the characteristic size of optoelectronic devices is becoming smaller and smaller, and the complexity of graphics is gradually enhanced. Nano-imprint etching has become one of the most concerned research topics in the field of micro-nano fabrication due to its advantages such as high resolution, flexible graphic production and high production efficiency, which are not limited by the wavelength of photolithography. In this paper, a new type of Si-PIN photodetector based on nano-imprint etching is simulated in this paper, and the functional characteristics of the detector are verified in the later stage combined with the development of the principle device. In this paper, nano-imprint etching process is used to fabricate the surface microstructure of silicon nanoscale array, combining with elemental doping band modification of silicon material, based on the calculation of semiconductor physics and device physics, etc. The structure of the new detector is calculated and designed, and the simulation research is carried out by using Silvaco TCAD software. The photoelectric characteristics of the new photodetector are investigated. Finally, the simulation optimization results are used to guide the practical processing of the device. Based on the silicon nanoscale array with band modification, the simulation results of Si-PIN photodetectors show that: (1) the peak response of the new detector is slightly redshifted from 980 nm to 43.80 nm, quantum efficiency. The peak responsivity reached 0.39A / W; At 1060 nm, the quantum efficiency is 42.11 and the responsivity is 0.36A / W. (2) the dark current and response time of the new detector are 0.54nA and 7 ns, respectively. Finally, aiming at the fabrication process of orthormal Si-PIN unit detector, the principle device of orthormal Si-PIN based on silicon nano-column array is fabricated by nano-imprint etching in P layer and its function is verified. The results show that, In the wide spectral range of 400 nm~1100 nm, the responsivity of the new detector is obviously improved, and the responsivity at 1060 nm is 67% higher than that of the traditional device.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN29

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