SRAM单粒子加固设计
发布时间：2018-12-15 00:21
【摘要】：集成电路作为电子设备的控制中枢取得了广泛的应用,其安全稳定性日益受到各界关注。然而集成电路容易受空间高能粒子辐射而损坏,特别是作为大量数据载体的SRAM在复杂的辐射环境中显得尤为脆弱。近20余年来,SRAM抗辐照加固技术取得的长足的发展,加固对各种粒子辐射环境中的SRAM起到了一定的保护作用。本文在研究和总结已有加固技术的基础上,基于双互锁存单元DICE(Double Interlocked Storage Cell)提出了全状态下抗单粒子辐射SRAM单元存储结构DDICE(Delay DICE),采用该结构设计了一款抗单粒子效应加固SRAM,并对设计的SRAM做了功能验证和抗单粒子效应验证。本论文的主要工作如下:1.本文对空间辐射环境做了详细理论研究,分析了SRAM存储单元各种辐射效应的产生机理,总结了现有加固技术:电阻加固、电路设计加固、工艺加固以及纠错编码加固的加固原理以及不足之处。2.引入加固SRAM存储单元的设计思想,基于DICE结构,采用延时和滤波技术设计了一种在静态存储以及动态读写状态下对单粒子辐射具有免疫作用的SRAM存储结构DDICE单元,可以滤除1 ns宽度的SET翻转脉冲。3.研究并设计了与DDICE单元配套SRAM外围电路,基于全定制电路设计流程设计了一款容量大小为128 Kb的加固SRAM,包括原理图设计、前仿真、版图设计、后仿真、参数提取以及DRC和LVS验证。4.最后对设计的SRAM版图做了时序和功能仿真,以及抗单粒子效应验证和功耗测试。本设计在静态时具有与DICE相似的抗单粒子效果,线性能量传输值LET可以达到37.7218,在写状态LET达到26.1708 Me V×cm2/mg,在读状态LET超过了37.6351 Me V×cm2/mg,远高于经典DICE结构在读写状态下的6.7511Me V ×cm2/ mg和6.6662Me V ×cm2/ mg。与六管SRAM和DICE相比,本设计除了面积有所增加外,抗单粒子效应能力具有了显著的提升,平均功耗约为11.96 m W。
[Abstract]:Integrated circuit (IC) has been widely used as the control center of electronic equipment, and its safety and stability have been paid more and more attention. However, integrated circuits are vulnerable to high energy space particle radiation, especially SRAM, which is a large number of data carriers, is particularly vulnerable in complex radiation environment. In recent 20 years, SRAM radiation resistant reinforcement technology has made great progress, and reinforcement has played a certain role in protecting SRAM in various particle radiation environment. In this paper, based on the research and summary of the existing reinforcement techniques, a novel SRAM cell storage structure, DDICE (Delay DICE), is proposed based on the dual-interlocking unit (DICE (Double Interlocked Storage Cell) to resist single particle radiation in the whole state. A new type of anti-single particle effect reinforcement SRAM, is designed, and the designed SRAM is verified by function and anti-single particle effect. The main work of this paper is as follows: 1. This paper makes a detailed theoretical study on the space radiation environment, analyzes the mechanism of various radiation effects in SRAM memory cells, and summarizes the existing reinforcement technologies: resistance strengthening, circuit design strengthening, Technical reinforcement and error correction code reinforcement of the reinforcement principle and shortcomings. 2. This paper introduces the design idea of reinforced SRAM memory cell, based on DICE structure, uses delay and filtering techniques to design a SRAM storage structure DDICE cell which has immune effect to single particle radiation in static storage and dynamic read and write state. Can filter 1 ns width of SET flip pulse. 3. The peripheral circuit of SRAM matching with DDICE unit is studied and designed. Based on the design flow of fully customized circuit, a reinforced SRAM, with capacity of 128 Kb is designed, including schematic design, pre-simulation, layout design and post-simulation. Parameter extraction and DRC and LVS validation. 4. Finally, the timing and function of the SRAM layout are simulated, and the anti-single-particle effect is verified and power consumption is tested. This design has the same anti-single particle effect as DICE in static state. The linear energy transfer value (LET) can reach 37.7218, and the LET in write state is 26.1708 Me V 脳 cm2/mg, LET is more than 37.6351 Me V 脳 cm2/mg,. Far higher than the 6.7511Me V 脳 cm2/ mg and 6.6662Me V 脳 cm2/ mg. of classical DICE structure in read and write state. Compared with the six-transistor SRAM and DICE, the design has an increase in area, and a remarkable increase in the ability of anti-single particle effect. The average power consumption is about 11.96mW.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN402
本文编号：2379586
[Abstract]:Integrated circuit (IC) has been widely used as the control center of electronic equipment, and its safety and stability have been paid more and more attention. However, integrated circuits are vulnerable to high energy space particle radiation, especially SRAM, which is a large number of data carriers, is particularly vulnerable in complex radiation environment. In recent 20 years, SRAM radiation resistant reinforcement technology has made great progress, and reinforcement has played a certain role in protecting SRAM in various particle radiation environment. In this paper, based on the research and summary of the existing reinforcement techniques, a novel SRAM cell storage structure, DDICE (Delay DICE), is proposed based on the dual-interlocking unit (DICE (Double Interlocked Storage Cell) to resist single particle radiation in the whole state. A new type of anti-single particle effect reinforcement SRAM, is designed, and the designed SRAM is verified by function and anti-single particle effect. The main work of this paper is as follows: 1. This paper makes a detailed theoretical study on the space radiation environment, analyzes the mechanism of various radiation effects in SRAM memory cells, and summarizes the existing reinforcement technologies: resistance strengthening, circuit design strengthening, Technical reinforcement and error correction code reinforcement of the reinforcement principle and shortcomings. 2. This paper introduces the design idea of reinforced SRAM memory cell, based on DICE structure, uses delay and filtering techniques to design a SRAM storage structure DDICE cell which has immune effect to single particle radiation in static storage and dynamic read and write state. Can filter 1 ns width of SET flip pulse. 3. The peripheral circuit of SRAM matching with DDICE unit is studied and designed. Based on the design flow of fully customized circuit, a reinforced SRAM, with capacity of 128 Kb is designed, including schematic design, pre-simulation, layout design and post-simulation. Parameter extraction and DRC and LVS validation. 4. Finally, the timing and function of the SRAM layout are simulated, and the anti-single-particle effect is verified and power consumption is tested. This design has the same anti-single particle effect as DICE in static state. The linear energy transfer value (LET) can reach 37.7218, and the LET in write state is 26.1708 Me V 脳 cm2/mg, LET is more than 37.6351 Me V 脳 cm2/mg,. Far higher than the 6.7511Me V 脳 cm2/ mg and 6.6662Me V 脳 cm2/ mg. of classical DICE structure in read and write state. Compared with the six-transistor SRAM and DICE, the design has an increase in area, and a remarkable increase in the ability of anti-single particle effect. The average power consumption is about 11.96mW.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN402
【参考文献】
相关硕士学位论文 前2条
1 袁子阳;抗辐射加固“龙芯”处理器的空间辐射环境适应性研究及航天计算机设计[D];中国科学院研究生院（空间科学与应用研究中心）;2009年
2 向文超;抗辐照SRAM存储器的设计[D];国防科学技术大学;2010年
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