张应变锗薄膜制备技术的研究进展
发布时间：2018-12-15 01:15
【摘要】：由于与硅集成电路工艺兼容的张应变锗薄膜在光电器件如光电探测器、调制器,特别是发光器件中具有潜在的应用前景,使其得到了广泛关注。然而,在锗薄膜中引入可控的、大的张应变是个挑战。综述了张应变锗薄膜制备技术的研究进展,重点介绍了在锗薄膜中引入张应变的外延技术、应变转移技术、应变浓缩技术和机械应变技术的工艺流程和实验结果,并讨论了它们的优点和缺点。采用应变浓缩技术制备的厚度为350 nm的锗薄膜微桥的单轴张应变和微盘的双轴张应变分别达到了4.9%和1.9%,可将锗调制为直接带隙材料,适用于锗激光器的研制。
[Abstract]:Due to its potential applications in photoelectric devices, such as photodetectors, modulators, especially luminescent devices, tensioned germanium films compatible with silicon integrated circuit technology have attracted wide attention. However, the introduction of controllable, large tensile strain in germanium films is a challenge. The progress in the preparation of strained germanium thin films is reviewed. The process flow and experimental results of introducing tensile strain into germanium thin films, strain transfer technology, strain concentration technology and mechanical strain technology are introduced emphatically. Their advantages and disadvantages are also discussed. The uniaxial strain and biaxial strain of GE thin film microbridge with thickness of 350 nm and biaxial strain of microdisk prepared by strain concentration technique are up to 4.9% and 1.9%, respectively. Germanium can be modulated as a direct bandgap material, which is suitable for the development of germanium laser.
【作者单位】： 深圳信息职业技术学院电子与通信学院;
【基金】：广东省高等学校优秀青年教师项目(Yq2014123)
【分类号】：TN304.11
本文编号：2379671
[Abstract]:Due to its potential applications in photoelectric devices, such as photodetectors, modulators, especially luminescent devices, tensioned germanium films compatible with silicon integrated circuit technology have attracted wide attention. However, the introduction of controllable, large tensile strain in germanium films is a challenge. The progress in the preparation of strained germanium thin films is reviewed. The process flow and experimental results of introducing tensile strain into germanium thin films, strain transfer technology, strain concentration technology and mechanical strain technology are introduced emphatically. Their advantages and disadvantages are also discussed. The uniaxial strain and biaxial strain of GE thin film microbridge with thickness of 350 nm and biaxial strain of microdisk prepared by strain concentration technique are up to 4.9% and 1.9%, respectively. Germanium can be modulated as a direct bandgap material, which is suitable for the development of germanium laser.
【作者单位】： 深圳信息职业技术学院电子与通信学院;
【基金】：广东省高等学校优秀青年教师项目(Yq2014123)
【分类号】：TN304.11
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