多孔硅气敏特性研究
发布时间：2018-12-15 23:20
【摘要】：多孔硅材料具有制备工艺简单、成本低、易于集成化、对环境污染小等特点,可以用于检测各类氧化性气体(如N02)和还原性气体(如CO),是目前热门的研究气敏材料之一,其中提高多孔硅表面硅排列的均匀度是提高多孔硅材料灵敏度的主要途径。本文采用双槽电化学法制备多孔硅,并对制备的多孔硅表面形貌进行分析,研究了多孔硅层对乙醇气体气敏特性的影响,简要分析了其气敏机理,得到下列结果：1.利用自制双槽电化学腐蚀法成功的制备纳米级孔径的多孔硅层。分析表明：在高电阻率1-10Ω·cm和低电阻率0.001-0.0016Ω·cm硅片上制备的多孔硅,孔隙率随着电流密度的增加呈现先增加后减小的特点,且在电流密度40mA/cm2时孔隙率得到最大。电阻率0.01-0.02Ω·cm的硅片上制备的多孔硅,孔隙率随着电流密度增加而增大。2.分别对三组多孔硅表面进行多孔硅形貌分析。分析表明：电阻率0.01-0.02Ω·cm的硅片上制备的多孔硅比其他两组均匀性更好,孔径较小,孔深较深。在40mA/cm2时,表面形貌均匀性最佳。3.研究了电阻率0.01-0.02Ω·cm硅片上制备的多孔硅层对不同浓度乙醇还原性气体的气敏性能。结果表明：表面均匀性较差的两组样品气敏特性不稳定,均匀度较好的其他三个样品的气敏性能稳定。在电流密度在40mA/cm2下制备的多孔硅对各浓度的乙醇气体的灵敏度相对稳定,均值达到2.24。
[Abstract]:Porous silicon has the advantages of simple preparation process, low cost, easy integration, low environmental pollution and so on. It can be used to detect various oxidizing gases (such as N02) and reductive gases (such as CO),). The main way to improve the sensitivity of porous silicon is to improve the uniformity of silicon arrangement on porous silicon surface. In this paper, porous silicon was prepared by two-cell electrochemical method. The surface morphology of porous silicon was analyzed. The effect of porous silicon layer on the gas sensing characteristics of ethanol was studied. The gas sensing mechanism of porous silicon was briefly analyzed, and the following results were obtained: 1. The porous silicon layer with nanometer pore size was successfully prepared by self-made double-cell electrochemical etching method. The results show that the porosity of porous silicon prepared on high resistivity 1-10 惟 cm and low resistivity 0.001-0.0016 惟 cm wafers increases first and then decreases with the increase of current density. The porosity is maximum at current density 40mA/cm2. The porosity of porous silicon prepared on the wafer with resistivity 0.01-0.02 惟 cm increases with the increase of current density. The morphologies of porous silicon on the surface of three groups of porous silicon were analyzed respectively. The results show that the porous silicon prepared on the wafer with resistivity of 0.01-0.02 惟 cm has better homogeneity, smaller pore size and deeper pore depth than the other two groups. In 40mA/cm2, the surface morphology is the best. 3. 3. The gas-sensing properties of porous silicon layer prepared on 0.01-0.02 惟 cm wafer with different concentrations of ethanol reductive gases were studied. The results show that the gas sensitivity of the two groups of samples with poor surface uniformity is unstable, and that of the other three samples with good uniformity is stable. The sensitivity of porous silicon prepared at current density at 40mA/cm2 to ethanol gas at different concentrations is relatively stable, with a mean value of 2.24.
【学位授予单位】：合肥工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304.12
[Abstract]:Porous silicon has the advantages of simple preparation process, low cost, easy integration, low environmental pollution and so on. It can be used to detect various oxidizing gases (such as N02) and reductive gases (such as CO),). The main way to improve the sensitivity of porous silicon is to improve the uniformity of silicon arrangement on porous silicon surface. In this paper, porous silicon was prepared by two-cell electrochemical method. The surface morphology of porous silicon was analyzed. The effect of porous silicon layer on the gas sensing characteristics of ethanol was studied. The gas sensing mechanism of porous silicon was briefly analyzed, and the following results were obtained: 1. The porous silicon layer with nanometer pore size was successfully prepared by self-made double-cell electrochemical etching method. The results show that the porosity of porous silicon prepared on high resistivity 1-10 惟 cm and low resistivity 0.001-0.0016 惟 cm wafers increases first and then decreases with the increase of current density. The porosity is maximum at current density 40mA/cm2. The porosity of porous silicon prepared on the wafer with resistivity 0.01-0.02 惟 cm increases with the increase of current density. The morphologies of porous silicon on the surface of three groups of porous silicon were analyzed respectively. The results show that the porous silicon prepared on the wafer with resistivity of 0.01-0.02 惟 cm has better homogeneity, smaller pore size and deeper pore depth than the other two groups. In 40mA/cm2, the surface morphology is the best. 3. 3. The gas-sensing properties of porous silicon layer prepared on 0.01-0.02 惟 cm wafer with different concentrations of ethanol reductive gases were studied. The results show that the gas sensitivity of the two groups of samples with poor surface uniformity is unstable, and that of the other three samples with good uniformity is stable. The sensitivity of porous silicon prepared at current density at 40mA/cm2 to ethanol gas at different concentrations is relatively stable, with a mean value of 2.24.
【学位授予单位】：合肥工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304.12
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