45nm MOSFET射频小信号噪声等效电路建模直接提取方法
发布时间：2018-12-17 17:27
【摘要】：针对45 nm MOSFET射频等效电路建模和参数提取技术进行了研究,在精确地提取了射频小信号模型参数之后,基于双端口网络的噪声相关矩阵和多端口噪声理论,使用本征电路的噪声电流源嵌入有噪声贡献的元件,从而分析推导出射频噪声参数模型,并与商用的45 nm CMOS射频测量值相对比,在相应的频段内显示出很好的正确性。
[Abstract]:The modeling and parameter extraction techniques of 45 nm MOSFET RF equivalent circuit are studied. After accurate extraction of RF small-signal model parameters, the noise correlation matrix based on two-port network and the multi-port noise theory are proposed. The noise current source of the intrinsic circuit is used to embed the element with noise contribution, and the RF noise parameter model is analyzed and deduced, and compared with the commercial 45 nm CMOS radio frequency measurement value, it shows a good correctness in the corresponding frequency band.
【作者单位】： 西南科技大学信息工程学院;
【分类号】：TN386.1
，
本文编号：2384558
[Abstract]:The modeling and parameter extraction techniques of 45 nm MOSFET RF equivalent circuit are studied. After accurate extraction of RF small-signal model parameters, the noise correlation matrix based on two-port network and the multi-port noise theory are proposed. The noise current source of the intrinsic circuit is used to embed the element with noise contribution, and the RF noise parameter model is analyzed and deduced, and compared with the commercial 45 nm CMOS radio frequency measurement value, it shows a good correctness in the corresponding frequency band.
【作者单位】： 西南科技大学信息工程学院;
【分类号】：TN386.1
，
本文编号：2384558
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