质子在氮化镓中产生位移损伤的Geant4模拟

发布时间：2018-12-20 13:49

【摘要】：材料受到辐照时产生的位移损伤会导致其微观结构发生变化,从而使其某些使用性能退化,影响其使用效率,减短其使用寿命。利用Geant4模拟了质子在氮化镓中的输运过程,计算了1、10、100、500 MeV能量质子入射氮化镓材料产生的初级撞出原子的种类、能量信息及离位原子数。获得了10 MeV质子产生的位移缺陷分布;计算了4种能量质子入射氮化镓材料产生的非电离能量损失(NIEL);研究了质子产生位移损伤过程的影响要素。研究发现,入射质子能量对其在材料中产生的初级撞出原子的种类、能量、离位原子数等信息有着非常大的影响;单位厚度所沉积NIEL随着入射质子能量的增大而减小;10 MeV质子入射氮化镓所产生的离位原子数随入射深度的增加而增加,但在超出其射程范围以外有一巨大回落;能量并不是影响质子与氮化镓靶材料相互作用的唯一因素。
[Abstract]:The displacement damage caused by radiation will cause the microstructure of the material to change, which will degrade some of its performance, affect its efficiency and shorten its service life. The transport process of protons in gallium nitride was simulated by Geant4. The kinds of atoms, the energy information and the number of exiting atoms produced by proton incident gallium nitride materials with 110100500 MeV energy were calculated. The distribution of displacement defects produced by 10 MeV proton was obtained, and the non-ionization energy loss of four kinds of energy proton incident gallium nitride materials was calculated. The influence factors of proton induced displacement damage process were studied by (NIEL);. It is found that the incident proton energy has a great influence on the type, energy and number of atoms produced in the material, and the NIEL deposited by the unit thickness decreases with the increase of the incident proton energy. The number of dissociated atoms produced by 10 MeV proton incident gallium nitride increases with the increase of incident depth, but there is a great fall beyond its range. Energy is not the only factor affecting the interaction between proton and gallium nitride target material.
【作者单位】：西安交通大学核科学与技术学院;
【分类号】：TN304

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