化学气相沉积设备尾气过滤系统的研究与分析

发布时间：2019-01-03 16:26

【摘要】：第一、二代半导体材料为工业进步、社会发展做出了贡献,如今第三代新型半导体材料以SiC、GaN为代表凭借优异的性能正在迅速崛起。关于新型半导体材料的相关制备工艺是学术及工业界的关注热点,与制备工艺密切有关的化学气相沉积(CVD)设备的研发同样受到重视。由于制备反应过程中复杂的气体流动及尾气系统对反应腔内部压力的控制直接影响着材料的生长质量、厚度均匀性等,且发生的复杂的气体化学反应及砷、磷等氢化物具有较强的毒性,对设备气路系统尤其是尾气系统提出了很高的要求。本文首先简要介绍了MOCVD设备在LED半导体产业中的应用,以及设备整体组成系统。重点介绍了气路系统及其子系统尾气系统,结合气路工作原理图,通过对尾气系统工作原理进行分析,提出关键技术:尾气处理、对反应腔内部压力有影响的相关元件选取和设计。其次,对尾气处理的关键部件--颗粒过滤器进行仿真分析。基于计算流体力学(CFD)的基本理论,建立颗粒过滤器滤芯数学模型,分析滤芯内部气体流场分布情况。并在此模型的基础上,计算颗粒过滤器滤芯相关结构参数(褶数、夹角、褶宽等)对过滤器压损的影响,提出减小颗粒过滤器中滤芯部分产生的压力损失的方案。最后,根据颗粒过滤器的壳体结构,建立相应模型,利用有限元法对壳体内部的流场进行模拟仿真分析,通过改变壳体结构进行优化设计,提高流场分布均匀性,进一步减小颗粒过滤器造成的压损。
[Abstract]:The first and second generation semiconductors have contributed to the progress of industry and social development. Nowadays, the third generation of new semiconductor materials, represented by SiC,GaN, is rising rapidly by virtue of its excellent properties. The research and development of chemical vapor deposition (CVD) equipment, which is closely related to the preparation process, is a hot topic in academic and industrial fields. Because of the complex gas flow and the control of the pressure in the reaction chamber during the preparation process, the material growth quality and thickness uniformity are directly affected, and the complex gas chemical reaction and arsenic occur. The hydrogen compounds, such as phosphorus, have strong toxicity, and put forward very high requirements for the equipment gas system, especially the tail gas system. In this paper, the application of MOCVD equipment in LED semiconductor industry and the whole system are briefly introduced. The gas path system and its subsystem tail gas system are introduced emphatically. Combined with the working principle diagram of the gas path, the working principle of the exhaust gas system is analyzed, and the key technology: tail gas treatment is put forward. Selection and design of relevant components that have an effect on the internal pressure of the reaction chamber. Secondly, the particle filter, the key component of tail gas treatment, is simulated and analyzed. Based on the basic theory of computational fluid dynamics (CFD), the mathematical model of particulate filter element is established, and the distribution of gas flow field in the filter element is analyzed. On the basis of the model, the influence of the relevant structural parameters (fold number, angle, width, etc.) on the pressure loss of the filter is calculated, and a scheme to reduce the pressure loss of the filter element in the particle filter is put forward. Finally, according to the shell structure of the particle filter, the corresponding model is established, and the flow field inside the shell is simulated and analyzed by finite element method. The optimization design of the shell structure is carried out to improve the uniformity of the flow field distribution. Further reduce the pressure loss caused by particle filter.
【学位授予单位】：华中科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304.055

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