基于HF溶液选择性刻蚀的单晶硅亚表面非晶损伤层探测方法研究
发布时间：2019-01-07 17:58
【摘要】：半导体产品高集成度和高性能化的快速发展,对半导体材料硅的加工表面质量提出了苛刻要求,任何超出许可范围的损伤都会降低半导体器件的性能。前期研究表明,亚表面的非晶化是单晶硅材料在超精密加工过程中的前期损伤的主要表现形式,因此非晶层特性的量化检测,对于评价单晶硅表面/亚表面损伤程度显得至关重要。目前已有的检测方法虽然可以较好地分析非晶层的力学、化学、结构等特性,但是存在诸如样品制作过程复杂、检测时间漫长、检测费用昂贵等问题,因此亟待寻求一种精确、快速、经济的检测方法。研究表明,单晶硅材料的划痕损伤层能被HF溶液选择性刻蚀。根据这一特性,本文提出了一种快速检测单晶硅亚表面损伤层厚度的方法,并结合TEM检测对此方法的有效性进行了验证。进而采用此方法,对不同载荷和刻划速度下单晶硅表面的划痕损伤层厚度进行了检测,揭示了载荷和速度对单晶硅亚表面划痕损伤的影响规律。本文的主要研究结果及创新点如下：(1)利用HF溶液对单晶Si(100)表面的非晶硅损伤层具有选择性刻蚀这一特性,提出了一种准确、快速地检测单晶硅亚表面非晶损伤层厚度的方法。透射电镜结果显示,HF溶液能选择性地刻蚀单晶硅划痕区域的亚表面损伤层,证实了该方法检测结果的有效性。该方法有望应用于单晶硅晶圆平坦化过程的损伤检测与控制。(2)提出了一种亚表面非晶损伤层的密度测量方法。亚表面损伤层的质量可以通过对比腐蚀前后的质量差进行测定,而其体积可由软件积分的方法进行计算,从而亚表面非晶层的密度可直接由公式计算可得。(3)阐述了外加载荷和滑动速度对单晶硅亚表面划痕损伤的影响。实验结果表明,当外加载荷为单晶硅临界屈服载荷的1.1倍及以下时,单晶硅亚表面的划痕损伤层厚度随刻划速度的增大而减小；当外加载荷达到临界屈服载荷的1.8倍及以上时,单晶硅亚表面的划痕损伤对刻划速度的变化不敏感。
[Abstract]:With the rapid development of high integration and high performance of semiconductor products, the surface quality of silicon semiconductor materials is demanding. Any damage beyond the permitted range will reduce the performance of semiconductor devices. Previous studies have shown that the subsurface non-crystallization is the main form of early damage of monocrystalline silicon materials during ultra-precision machining, so the quantitative detection of the properties of amorphous layers, It is very important to evaluate the damage degree of monocrystalline silicon surface / subsurface. Although the existing testing methods can well analyze the mechanical, chemical and structural properties of amorphous layers, there are some problems such as the complexity of sample making process, the long detection time and the high detection cost, etc. Therefore, it is urgent to seek an accurate method. Rapid and economical detection method. The results show that the scratch damage layer of monocrystalline silicon can be selectively etched by HF solution. According to this characteristic, a fast method for detecting the thickness of the damage layer on the subsurface of monocrystalline silicon is proposed, and the effectiveness of the method is verified by TEM. Furthermore, the thickness of scratch layer on the surface of monocrystalline silicon was measured under different loading and scratching velocities, and the effect of load and velocity on the scratch damage of single crystal silicon subsurface was revealed. The main research results and innovations in this paper are as follows: (1) the selective etching of amorphous silicon damage layer on single crystal Si (100) surface by HF solution is used, and an accurate method is proposed. A rapid method for measuring the thickness of amorphous damage layer on the subsurface of monocrystalline silicon. The results of transmission electron microscopy show that HF solution can selectively etch the subsurface damage layer in the scratch region of monocrystalline silicon, which proves the validity of the method. This method is expected to be applied to the damage detection and control of wafer flattening. (2) A method for measuring the density of subsurface amorphous damage layer is proposed. The quality of the subsurface damage layer can be measured by comparing the mass difference before and after corrosion, and its volume can be calculated by the software integral method. Thus the density of the amorphous layer on the subsurface can be calculated directly from the formula. (3) the effects of applied load and sliding velocity on the scratch damage of the subsurface of monocrystalline silicon are discussed. The experimental results show that when the applied load is 1.1 times of the critical yield load of monocrystalline silicon, the thickness of scratch damage layer on the subsurface of monocrystalline silicon decreases with the increase of the engraving speed. When the applied load reaches 1.8 times of the critical yield load, the scratch damage on the subsurface of the monocrystalline silicon is insensitive to the variation of the characterization speed.
【学位授予单位】：西南交通大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304.12
本文编号：2403960
[Abstract]:With the rapid development of high integration and high performance of semiconductor products, the surface quality of silicon semiconductor materials is demanding. Any damage beyond the permitted range will reduce the performance of semiconductor devices. Previous studies have shown that the subsurface non-crystallization is the main form of early damage of monocrystalline silicon materials during ultra-precision machining, so the quantitative detection of the properties of amorphous layers, It is very important to evaluate the damage degree of monocrystalline silicon surface / subsurface. Although the existing testing methods can well analyze the mechanical, chemical and structural properties of amorphous layers, there are some problems such as the complexity of sample making process, the long detection time and the high detection cost, etc. Therefore, it is urgent to seek an accurate method. Rapid and economical detection method. The results show that the scratch damage layer of monocrystalline silicon can be selectively etched by HF solution. According to this characteristic, a fast method for detecting the thickness of the damage layer on the subsurface of monocrystalline silicon is proposed, and the effectiveness of the method is verified by TEM. Furthermore, the thickness of scratch layer on the surface of monocrystalline silicon was measured under different loading and scratching velocities, and the effect of load and velocity on the scratch damage of single crystal silicon subsurface was revealed. The main research results and innovations in this paper are as follows: (1) the selective etching of amorphous silicon damage layer on single crystal Si (100) surface by HF solution is used, and an accurate method is proposed. A rapid method for measuring the thickness of amorphous damage layer on the subsurface of monocrystalline silicon. The results of transmission electron microscopy show that HF solution can selectively etch the subsurface damage layer in the scratch region of monocrystalline silicon, which proves the validity of the method. This method is expected to be applied to the damage detection and control of wafer flattening. (2) A method for measuring the density of subsurface amorphous damage layer is proposed. The quality of the subsurface damage layer can be measured by comparing the mass difference before and after corrosion, and its volume can be calculated by the software integral method. Thus the density of the amorphous layer on the subsurface can be calculated directly from the formula. (3) the effects of applied load and sliding velocity on the scratch damage of the subsurface of monocrystalline silicon are discussed. The experimental results show that when the applied load is 1.1 times of the critical yield load of monocrystalline silicon, the thickness of scratch damage layer on the subsurface of monocrystalline silicon decreases with the increase of the engraving speed. When the applied load reaches 1.8 times of the critical yield load, the scratch damage on the subsurface of the monocrystalline silicon is insensitive to the variation of the characterization speed.
【学位授予单位】：西南交通大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304.12
【参考文献】
相关期刊论文 前1条
1 吴征铠;;拉曼光谱的发现和最近的发展[J];光谱学与光谱分析;1983年02期
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