CdS电子结构及光电特性的第一性原理研究
发布时间:2019-01-08 17:08
【摘要】:研究了各向极化对CdS电子结构及光电特性的影响。采用基于密度泛函理论(DFT)的第一性原理超软赝势方法对CdS基态的电子结构和光电特性进行系统地计算,计算得到CdS是带隙宽带为1.943eV的直接带隙半导体材料。价带主要由S 3p态电子贡献,Cd 4p和Cd 4d态电子贡献较少;导带主要由Cd 4d5s和S 3p态电子决定,S 3s态电子贡献较少。在a、b、c三个方向的极化下研究CdS光学特性的各向异性,沿a方向和b方向极化的各个光学参量都完全相同,静态介电常数为7.234,但沿c方向的静态介电常数为6.273。其它光学参量的各向异性变化与介电函数相同,表明CdS晶体光学性质存在各向异性。计算结果为CdS光电特性的研究提供理论依据。
[Abstract]:The effects of polarization on the electronic structure and optoelectronic properties of CdS are studied. The first principle ultra-soft pseudopotential method based on density functional theory (DFT) is used to systematically calculate the electronic structure and photoelectric properties of CdS ground state. The results show that CdS is a direct bandgap semiconductor material with bandgap broadband as 1.943eV. The valence band is mainly contributed by the S 3p state electrons, the Cd 4p and Cd 4d states contribute less, the conduction band is mainly determined by the Cd 4d5s and S 3p states electrons, and the S 3s state electron contribution is less. The anisotropy of the optical properties of CdS is studied in three directions of polarization. The optical parameters along a direction and b direction are identical, and the static dielectric constant is 7.234. But the static dielectric constant along c direction is 6.273. The anisotropy of other optical parameters is the same as the number of dielectric function, which indicates that the optical properties of CdS crystal are anisotropic. The calculated results provide a theoretical basis for the study of the photoelectric characteristics of CdS.
【作者单位】: 安顺学院数理学院;贵州民族大学理学院;
【分类号】:TN304
[Abstract]:The effects of polarization on the electronic structure and optoelectronic properties of CdS are studied. The first principle ultra-soft pseudopotential method based on density functional theory (DFT) is used to systematically calculate the electronic structure and photoelectric properties of CdS ground state. The results show that CdS is a direct bandgap semiconductor material with bandgap broadband as 1.943eV. The valence band is mainly contributed by the S 3p state electrons, the Cd 4p and Cd 4d states contribute less, the conduction band is mainly determined by the Cd 4d5s and S 3p states electrons, and the S 3s state electron contribution is less. The anisotropy of the optical properties of CdS is studied in three directions of polarization. The optical parameters along a direction and b direction are identical, and the static dielectric constant is 7.234. But the static dielectric constant along c direction is 6.273. The anisotropy of other optical parameters is the same as the number of dielectric function, which indicates that the optical properties of CdS crystal are anisotropic. The calculated results provide a theoretical basis for the study of the photoelectric characteristics of CdS.
【作者单位】: 安顺学院数理学院;贵州民族大学理学院;
【分类号】:TN304
【相似文献】
相关期刊论文 前10条
1 房丽敏;;N掺杂钛酸锶的第一性原理研究[J];广东教育学院学报;2009年05期
2 高春燕;李德昌;张玉明;汤晓燕;苗瑞霞;;一种基于第一性原理的4H-SiC结构缺陷计算模型[J];科技信息;2009年29期
3 史立秋;息明东;张琳;马清祥;;硅(100)表面组装膜的第一性原理研究[J];佳木斯大学学报(自然科学版);2012年03期
4 程正则;;第一性原理研究霰石的电子结构和光学性质[J];光学学报;2008年11期
5 何焕典;王新强;罗强;肖世发;;锯齿型单壁碳纳米管能隙的第一性原理研究[J];原子与分子物理学报;2006年03期
6 丁少锋;范广涵;李述体;肖冰;;氮化铟p型掺杂的第一性原理研究[J];物理学报;2007年07期
7 李梦婷;张文雪;;试分析氧化锌p型共掺杂精细结构的第一性原理[J];科技资讯;2013年19期
8 陈启q,
本文编号:2404888
本文链接:https://www.wllwen.com/kejilunwen/dianzigongchenglunwen/2404888.html