电化学研究在锗的化学机械抛光上的应用

发布时间：2019-01-09 12:55

【摘要】：通过电化学工作站对p型2英寸(1英寸=2.54 cm)Ge晶圆进行了研究,结合Alpsitec E460抛光机、原子力显微镜(AFM)验证电化学研究对于Ge的化学机械抛光的理论指导意义。结果表明:NaOH作为pH调节剂对Ge具备着比KOH,NH_3·H_2O作为pH调节剂更强的腐蚀性;在H_2O_2浓度一定的条件下,Ge的腐蚀性随着电解液中pH值的增加而增加;在pH相同的条件下,NaClO对Ge的腐蚀性要高于H_2O_2对Ge的腐蚀性。使用Alpsitec E460机台对电化学测试结果进行验证比较,经过条件优化,在5%(质量分数)的SiO_2磨料,1%(原子分数)的H_2O_2,pH=9条件下对Ge晶圆进行化学机械抛光得到Ge的抛光速率为299.87 nm·min~(-1),通过AFM观测抛光120 s后Ge晶圆表面粗糙度RMS=1.86 nm(10μm×10μm),线粗糙度Ra可达0.137 nm。说明了Ge的电化学测试可以有效为实际的CMP研究提供可靠的理论指导。
[Abstract]:The p-type 2-inch (1 inch = 2.54 cm) Ge) wafer was studied by an electrochemical workstation. The theoretical significance of electrochemical study for the chemical-mechanical polishing of Ge was verified by combining with Alpsitec E460 polishing machine and atomic force microscope (AFM) (AFM). The results show that NaOH as a pH regulator is more corrosive to Ge than KOH,NH_3 H _ 2O as pH regulator, and the corrosion of Ge increases with the increase of pH value in electrolyte under the condition of constant H_2O_2 concentration. Under the same pH conditions, NaClO is more corrosive to Ge than H_2O_2 to Ge. The electrochemical test results were verified and compared by Alpsitec E460 machine. After optimizing the conditions, the SiO_2 abrasive of 5% (mass fraction) and the H _ 2O _ 2 of 1% (atomic fraction) were compared. The polishing rate of Ge wafer is 299.87 nm min~ (-1) by chemical-mechanical polishing under pH=9. The surface roughness of Ge wafer (10 渭 m 脳 10 渭 m), line roughness Ra) can be up to 0.137 nm. after AFM observation. The results show that the electrochemical measurement of Ge can provide reliable theoretical guidance for practical CMP research.
【作者单位】：河北工业大学电子信息工程学院天津市电子材料与器件重点实验室;
【基金】：河北省高层次人才资助项目百人计划项目(E2013100006)资助
【分类号】：TN305.2

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