642nm红光激光器有源区量子阱混杂的研究

发布时间：2019-01-15 22:42

【摘要】：随着激光显示技术的快速发展,对高性能红光激光光源的需求愈发迫切。采用张应变的GaInP量子阱可以获得更短波长的红光,但其受到的光学灾变损伤效应更为严重,因而光电特性和可靠性面临着挑战。采用非吸收窗口结构可以有效抑制腔面光吸收造成的材料损伤,通过量子阱混杂技术制作非吸收窗口是一种工艺方便,可靠性较好的方法,具有很好的应用潜力。本论文主要针对642 nm红光激光器的有源区开展了量子阱混杂的实验研究。实验中642 nm红光激光器外延结构采用MOCVD技术生长而成,有源区采用9 nm厚的张应变Ga0.65In0.35P双量子阱。分别采用了离子注入法和杂质扩散法的两种方法来诱导量子阱混杂。离子注入诱导混杂时,需要引入快速后退火工艺来加速混杂过程,杂质扩散法诱导混杂时,需要先在外延结构上生长ZnO薄膜来提供杂质源。离子注入诱导混杂时,采用低能生物改性离子注入设备在去掉了表面GaAs欧姆接触层的642 nm红光激光器外延结构中注入N离子,注入能量为40 KeV,注入剂量为le17 ions/cm2;离子注入完成后对样品进行快速热退火来加速诱导量子阱混杂,退火温度为730°C,退火时间为60s-300s,间隔为60s。实验发现所有样品均发生了波长蓝移,且蓝移量随退火时间增加的而增加,300 s时获得了 24.7 nm的最大蓝移量。同时还发现长时间的退火会对红光激光器外延结构的晶体品质和表面形貌造成不利影响。杂质扩散法诱导混杂时,首先采用磁控溅射在GaAs衬底上生长ZnO薄膜,根据测试结果得到了最合适的溅射参数(溅射功率70 W、溅射压强1.5 Pa、氩氧比20sccm: lOsccm、衬底温度为室温);再在去掉了表面GaAs欧姆接触层的642 nm红光激光器外延结构上溅射ZnO薄膜;最后通过Ar气保护、600°C下的高温退火使Zn杂质扩散进入642 nm红光激光器有源区来诱导量子阱混杂,退火时间为1 min-240 min。实验发现样品表面粗糙度随退火时间的增加而增大。
[Abstract]:With the rapid development of laser display technology, the demand of high performance red laser light source becomes more and more urgent. Red light with shorter wavelength can be obtained by GaInP quantum well with tensile strain, but its optical damage is more serious, so the photoelectric characteristics and reliability are challenged. The non-absorption window structure can effectively suppress the material damage caused by optical absorption on the cavity surface. It is a convenient and reliable method to fabricate the non-absorption window by quantum well hybrid technology, which has good application potential. In this thesis, the quantum well mixing experiments are carried out in the active region of 642 nm red laser. In the experiment, the epitaxial structure of 642 nm red laser is grown by MOCVD technique, and the active region is a 9 nm thick tensioned Ga0.65In0.35P double quantum well. Two methods of ion implantation and impurity diffusion were used to induce quantum well mixing. In the process of ion implantation induced confounding, the rapid post-annealing process is needed to accelerate the hybrid process. When the impurity diffusion method is used to induce the hybrid process, the ZnO thin films on the epitaxial structure should be grown to provide the impurity source. In the case of ion implantation induced confounding, N ions were implanted into 642 nm red laser epitaxial structure without surface GaAs ohmic contact layer by using a low energy biological modified ion implantation device. The implantation energy was 40 KeV, and the dose was le17 ions/cm2;. After ion implantation, the samples were annealed rapidly to accelerate the induction of quantum well mixing. The annealing temperature was 730 掳C, the annealing time was 60s-300s and the interval was 60s. It was found that the wavelength blue shift occurred in all the samples and the blue shift increased with the annealing time. The maximum blue shift of 24.7 nm was obtained at 300s. It is also found that annealing for a long time will adversely affect the crystal quality and surface morphology of the epitaxial structure of the red laser. In the process of impurity diffusion induced mixing, ZnO thin films were first grown on GaAs substrates by magnetron sputtering. The most suitable sputtering parameters (sputtering power 70 W, sputtering pressure 1.5 Pa, argon / oxygen ratio 20sccm: lOsccm,) were obtained according to the test results. The substrate temperature is room temperature. Then the ZnO thin films were deposited on the epitaxial structure of 642 nm red laser without surface GaAs ohmic contact layer. Finally, Zn impurities are diffused into the active region of 642 nm red laser by Ar gas protection and annealed at 600 掳C at high temperature to induce quantum well mixing. The annealing time is 1 min-240 min.. It is found that the surface roughness increases with the increase of annealing time.
【学位授予单位】：西安理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN248

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