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低功耗双带隙结构的CMOS带隙基准源

发布时间:2019-01-29 00:44
【摘要】:随着片上系统的发展,带隙基准源精度和功耗的要求也越来越高.目前的高阶温度补偿方法在工艺兼容、设计复杂度和功耗上还存在一定的局限性.本文推导了一个新颖的电流模带隙基准电路在饱和区工作时的温度特性,并结合双带隙结构在输出支路上采用电流比例相减的方式实现有效的曲率补偿,从而实现了一个新颖的双带隙结构CMOS带隙基准源.在GSMC 0.18μm工艺下,设计的CMOS带隙基准源版图面积为0.066mm~2.蒙特卡罗后仿真的结果表明,在-40~125℃温度范围内平均温度系数为14.27ppm/℃;在27℃时基准电压平均值为1.201V,标准偏差变化仅为33.813mV(2.82%);在3.3V工作电压下,静态电流平均为9.865μA,电源抑制为-37.21dB.本文设计的带隙基准源具有高精度、低功耗、结构简单的特点,是片上系统的良好选择.
[Abstract]:With the development of on-chip system, the precision and power consumption of bandgap reference are higher and higher. The current high-order temperature compensation methods have some limitations in process compatibility, design complexity and power consumption. In this paper, the temperature characteristics of a novel current-mode band-gap reference circuit operating in the saturation region are derived, and the effective curvature compensation is realized by using the current proportional subtraction method in the output branch combined with the dual-bandgap structure. A novel dual band gap CMOS bandgap reference source is realized. In the GSMC 0.18 渭 m process, the CMOS bandgap reference source layout area is 0.066 mm / 2. The results of Monte Carlo simulation show that the average temperature coefficient is 14.27ppm/ 鈩,

本文编号:2417472

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