纯红光、纯蓝光传统有机电致发光器件的优化

发布时间：2019-02-13 05:11

【摘要】：有机电致发光器件(Organic Light-emitting devices,OLED)具有自发光、亮度高、视角广、响应快、轻薄、可揉、成本低、环境适应性强、环保及可制作大尺寸面板等优势,被誉为下一代的梦幻显示领域和照明领域最具竞争力的技术。众所周知,有机电致发光器件在全彩显示方面需要红绿蓝三基色具有很好的稳定性以及低的操作电压,低电压下的高亮度和高效率对显示面板有着非常重要的意义。本论文主要针对改善和提高传统红色磷光、蓝色荧光器件的稳定性和发光效率以及降低器件的操作电压进行了研究,主要内容如下:1)在基于我们需要EL波段632-633 nm和640-650 nm的前提下,采用深红光客体Ir(MDQ)2(acac)、Ir(piq)3和Ir(pmiq)2(acac),主体材料是一种具有双偶极性的深蓝材料,搭配Ir(MDQ)2(acac)制备的器件EL主峰红移到632 nm,最高外量子效率达到15.52%;采用p-i-n结构优化Ir(piq)3制备的器件,最高外量子效率达到12.55%;采用Ir(pmiq)2(acac)制备的器件,其EL主峰在640 nm,色坐标CIEx,y(0.70,0.30),最高外量子效率达到12.38%。2)选用传统蓝光材料MADN,采用新型双空穴注入层结构优化MADN材料,当采用的器件结构ITO/MoO3(5)/HAT-CN(5)/TAPC(60)/MADN(30)/TmPyPB(20)/LiF(1)/Al时,器件的开启电压为2.8 V,色坐标CIEx,y(0.14,0.08),最大外量子效率达到4.15%;将该结构优化MADN掺杂高效荧光客体BUBD-1的器件,在7.8 V达到最大亮度16130cd/m2,最高外量子效率达到7.87%,最高电流效率达到13.8 cd/A,最高功率效率达到14.1 lm/W;3)选用传统蓝光材料α,β-ADN,采用p-i-n结构优化α,β-ADN掺杂高效荧光客体BUBD-1的器件,在7 V达到最大亮度20070 cd/m2,器件开启电压为2.9 V,最大外量子效率达到6.85%,改变n-doping层的厚度,影响器件的光色稳定性。
[Abstract]:Organic electroluminescent devices (Organic Light-emitting devices,OLED) have the advantages of self-luminescence, high brightness, wide viewing angle, fast response, lightweight, kneading, low cost, strong environmental adaptability, environmental protection and the ability to make large-sized panels, etc. Known as the next generation of dream display and lighting field the most competitive technology. As we all know, organic electroluminescent devices need red, green and blue trichromatic in full color display with good stability and low operating voltage. High brightness and high efficiency at low voltage have very important significance for display panel. In this thesis, the stability and luminescence efficiency of the traditional red phosphorescence and blue fluorescence devices are studied, and the operating voltage of the devices is reduced. The main contents are as follows: 1) based on the EL band of 632-633 nm and 640-650 nm, the deep red Ir (MDQ) 2 (acac), Ir (piq) 3 and Ir (pmiq) 2 (acac), are used. The host material is a kind of dark blue material with dual polarity. The main peak of EL fabricated with Ir (MDQ) 2 (acac) shifts to 632 nm, with the highest external quantum efficiency of 15.52%. The p-i-n structure is used to optimize the device prepared by Ir (piq) _ 3, and the maximum external quantum efficiency is 12.55. The main peak of EL of the device fabricated by Ir (pmiq) 2 (acac) is at 640 nm, color coordinate CIEx,y (0.70 ~ 0.30). The highest external quantum efficiency is 12.38.2) and the traditional blue-light material MADN, is chosen. A novel double-hole injection layer structure is used to optimize the MADN material. When the device structure is ITO/MoO3 (5) / HAT-CN (5) / TAPC (60) / MADN (30) / TmPyPB (20) / LiF (1) / Al, the starting voltage of the device is 2.8 V. The maximum external quantum efficiency of the color coordinate CIEx,y (0. 14 ~ 0. 08) is 4. 15; By optimizing the structure of MADN doped high efficiency fluorescent object BUBD-1 device, the maximum luminance of 16130 CD / m ~ 2, the highest external quantum efficiency of 7.87 and the maximum current efficiency of 13.8 cd/A, are obtained at 7.8 V. Maximum power efficiency 14.1 lm/W; 3) traditional blue light materials 伪, 尾-ADN, are used to optimize 伪, 尾-ADN doped high efficiency BUBD-1 devices with p-i-n structure. The maximum luminance of 20070 cd/m2, devices is 2. 9 V at 7 V. The maximum external quantum efficiency reaches 6.85. The thickness of the n-doping layer is changed and the photochromatic stability of the device is affected.
【学位授予单位】：华中科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN383.1

【相似文献】