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基于磁光相移的微环器件特性研究

发布时间:2019-02-21 08:24
【摘要】:硅光子学的发展激发了人们对硅基光波导器件的研究以及设计多功能的光信号处理芯片和光通信器件。其中磁光硅基波导器件(如磁光隔离器)的研究是目前大规模集成芯片的一个研究热点。本文基于磁光相移的原理,主要研究磁光硅基波导结构在微环中的应用,分析磁光微环谐振器的磁场传感特性和磁光Sagnac微环结构的磁光开关特性。本文主要的内容和创新如下:1.分析了三种磁化方向下磁光效应对导波光传播特性的影响,重点研究了水平和垂直两种横向磁化时二维平板波导和三维矩形波导的磁光相移特点。采用COMSOL仿真软件计算分析了Ce:YIG/Si/SiO_2和SiO_2/Si-Ce:YIG/SiO_2两种磁光波导结构中磁化强度对导波光场分布及其传播常数的影响。研究表明,平行于Ce:YIG/Si波导界面磁化时,上述两种波导结构中可获得明显的磁光相移,它们对应的导波光模式分别为TM波和TE波。2.采用SiO_2/Si-Ce:YIG/SiO_2硅基磁光波导设计了一种微环谐振结构用于磁场测量,仿真计算了准TE模导波光传输时微环谐振波长移动随垂直磁化强度的变化。对于半径为20μm的磁光微环,优化波导宽度可使磁场测量灵敏度达到0.0054nm/(kA/m),饱和磁化时微环谐振波长移动为0.52nm。3.提出一种基于Ce:YIG/Si/SiO_2波导结构的Sagnac微环谐振型磁光开关器件,当微环长度为100μm时开关磁化强度为53.82kA/m(低于饱和磁化强度),可实现0.96nm带宽信号的光开功能。与基于直波导的Sagnac磁光开关相比,大大降低了器件尺寸和开关磁化强度;与基于微环谐振器的波长移动光开关相比,具有更大的器件带宽和开关消光比性能。
[Abstract]:The development of silicon photonics has stimulated the research of silicon-based optical waveguide devices and the design of multifunctional optical signal processing chips and optical communication devices. The research of magneto-optic silicon-based waveguide devices (such as magneto-optic isolators) is a hot topic in the field of large-scale integrated chips. Based on the principle of magneto-optic phase shift, this paper mainly studies the application of magneto-optic silicon-based waveguide structure in microring, and analyzes the magnetic field sensing characteristics of magneto-optic microring resonator and the magneto-optic switch characteristics of magneto-optic Sagnac microloop structure. The main contents and innovations of this paper are as follows: 1. The effect of magneto-optical efficiency on the propagation characteristics of guided wave in three magnetized directions is analyzed. The magneto-optic phase shift characteristics of two-dimensional planar waveguide and three-dimensional rectangular waveguide are studied in horizontal and vertical transverse magnetization. The influence of magnetization on the field distribution and propagation constant of guided wave in Ce:YIG/Si/SiO_2 and SiO_2/Si-Ce:YIG/SiO_2 magneto-optic waveguide structures is calculated and analyzed by COMSOL simulation software. The results show that the magneto-optic phase shift can be obtained in the two waveguide structures parallel to the magnetization of the interface of the Ce:YIG/Si waveguide. The corresponding modes of the guided wave are TM wave and TE wave respectively. A microring resonant structure is designed for magnetic field measurement using SiO_2/Si-Ce:YIG/SiO_2 silicon-based magneto-optical waveguide. The variation of the resonant wavelength shift with vertical magnetization during quasi-TE mode guided wave propagation is simulated. For magneto-optic microrings with a radius of 20 渭 m, the magnetic measurement sensitivity can reach 0.0054nm/ (kA/m) by optimizing the waveguide width, and the resonant wavelength shifts to 0.52nm.3at saturation magnetization. A Sagnac microring resonant magneto-optic switch based on Ce:YIG/Si/SiO_2 waveguide structure is proposed. When the length of the microloop is 100 渭 m, the magnetization of the switch is 53.82kA/m (lower than the saturation magnetization). The optical opening function of 0.96nm bandwidth signal can be realized. Compared with the Sagnac magneto-optic switch based on the straight waveguide, the device size and the switching magnetization are greatly reduced, and compared with the wavelength moving optical switch based on the microloop resonator, the device bandwidth and the switching extinction ratio are much larger.
【学位授予单位】:电子科技大学
【学位级别】:硕士
【学位授予年份】:2017
【分类号】:TN256

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相关期刊论文 前8条

1 吴丹宁;吴远大;王s,

本文编号:2427380


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