多层电子器件的界面应力及塑性发展分析
发布时间:2019-03-02 09:11
【摘要】:界面应力是判断界面失效的关键参数,因此准确地预测界面应力对多层电子器件的设计具有重要意义.多层电子器件的层间界面处会出现较大的应力集中,引起结构发生塑性变形,而塑性区域的存在会改变应力集中程度,影响界面应力的分布,几何非线性和材料塑性的联合作用又会导致界面应力呈现不一样的奇异性.本文综合考虑弹塑性变形和几何非线性,对多层电子器件的界面应力分布及塑性区域发展进行了分析.以三层电子器件为例,详细讨论了电子器件在角位移加载和线位移加载两种模式下,界面应力分布和塑性区域的发展规律.相关结论可用于改善多层电子器件的工业设计.
[Abstract]:The interface stress is the key parameter to judge the interface failure, so it is very important to predict the interface stress accurately for the design of multi-layer electronic devices. A large stress concentration will occur at the interlayer interface of multilayer electronic devices, resulting in plastic deformation of the structure, and the presence of plastic region will change the degree of stress concentration and affect the distribution of interfacial stress, and the stress distribution of the interface will be affected by the presence of plastic region. The combination of geometric nonlinearity and material plasticity will lead to different singularity of interfacial stress. Considering the elasto-plastic deformation and geometric nonlinearity, the interfacial stress distribution and the development of plastic region of multilayer electronic devices are analyzed in this paper. Taking three-layer electronic devices as an example, the development rules of interfacial stress distribution and plastic region of electronic devices in two modes of angular displacement loading and line displacement loading are discussed in detail. The relevant conclusions can be used to improve the industrial design of multilayer electronic devices.
【作者单位】: 杭州电子科技大学机械工程学院;
【基金】:国家自然科学基金(11302064)
【分类号】:TN602
本文编号:2432911
[Abstract]:The interface stress is the key parameter to judge the interface failure, so it is very important to predict the interface stress accurately for the design of multi-layer electronic devices. A large stress concentration will occur at the interlayer interface of multilayer electronic devices, resulting in plastic deformation of the structure, and the presence of plastic region will change the degree of stress concentration and affect the distribution of interfacial stress, and the stress distribution of the interface will be affected by the presence of plastic region. The combination of geometric nonlinearity and material plasticity will lead to different singularity of interfacial stress. Considering the elasto-plastic deformation and geometric nonlinearity, the interfacial stress distribution and the development of plastic region of multilayer electronic devices are analyzed in this paper. Taking three-layer electronic devices as an example, the development rules of interfacial stress distribution and plastic region of electronic devices in two modes of angular displacement loading and line displacement loading are discussed in detail. The relevant conclusions can be used to improve the industrial design of multilayer electronic devices.
【作者单位】: 杭州电子科技大学机械工程学院;
【基金】:国家自然科学基金(11302064)
【分类号】:TN602
【相似文献】
相关期刊论文 前3条
1 秦飞;刘程艳;王卓茹;;微电子封装中焊锡接点的界面应力奇异性[J];北京工业大学学报;2012年05期
2 徐静平,黎沛涛,李斌;氮化感应致n-MOSFETsSi/SiO_2界面应力的研究[J];电子学报;2000年02期
3 何洪文;赵海燕;马立民;徐广臣;郭福;;Cu/Sn3.0Ag0.5Cu/Cu焊点电迁移过程中界面应力演变的研究[J];稀有金属材料与工程;2012年S2期
相关会议论文 前1条
1 武伟;秦飞;李玮;;TSV刻蚀粗糙度对界面应力的影响[A];中国力学大会——2013论文摘要集[C];2013年
,本文编号:2432911
本文链接:https://www.wllwen.com/kejilunwen/dianzigongchenglunwen/2432911.html