APD红外探测器结构与外延工艺研究
发布时间：2019-03-05 12:06
【摘要】：20世纪以来,随着光通信日益不断地向高速大容量传输方向发展,空间探测的不断创新,高响应速度,大带宽和高增益接收器件的研制也迅速发展。为了实现这类器件的制造,雪崩光电二极管(APD)应运而生,并成为其中不可或缺的重要组成部分,主要工作原理就是当耗尽区内的电场将载流子加速到能量高于禁带宽度,载流子能够与晶格发生碰撞产生附加的二次载流子。一般结构的APD器件是在PIN结构的基础上增加了雪崩增益区,不仅具备了PIN器件高响应度和快速响应速度的特点,同时其内部的高增益,使得其在微弱光信号的接收方面优于传统的PIN器件。在长波长通信领域,In P基InGaAs探测器在长波长通信窗口波长有很高的响应度,本文正是针对InP基APD器件,主要对吸收,渐变,电荷,倍增区分离式结构的APD器件(SAGCM-APD)进行研究,分析结构参数对器件的影响,在PIN制造工艺参数的基础上,进一步优化结构,实验制备此器件,主要从事的工作如下:1)从最基础的APD器件工作原理介绍,分别阐述几类常见的APD器件结构,然后分析影响光电探测器的几个重要参数。2)对InP基SAGCM-APD的结构参数进行计算模拟,主要分析电场分布,倍增因子的变化,吸收层厚度的模拟,确定SAGCM-APD结构参数。3)优化InP基P型In0.53Ga0.47AsMOCVD外延参数,优化In GaAs的生长得到晶格匹配的外延层。4)制备InP基SAGCM-APD器件,测量到明显的光电流,确定形成雪崩击穿状态。
[Abstract]:Since the 20th century, with the increasing development of optical communication to high-speed and large-capacity transmission, the innovation of space detection, the development of high response speed, large bandwidth and high-gain receiver devices have also developed rapidly. In order to achieve the fabrication of such devices, avalanche photodiodes (APD) emerged as the times require, and become an indispensable and important part of the device. The main principle is that when the electric field in the depletion region accelerates the carrier to energy higher than the band-gap width, The carrier can collide with the lattice to produce additional secondary carriers. The APD device of general structure increases avalanche gain area on the basis of PIN structure. It not only has the characteristics of high responsivity and fast response speed of PIN device, but also has high gain inside. It is superior to the traditional PIN device in the reception of weak optical signal. In the field of long-wavelength communication, InP-based InGaAs detector has high responsivity in the wavelength of long-wavelength communication window. This paper is aimed at InP-based APD devices, mainly for absorption, gradual change, charge, etc. The multiplicative region separated APD device (SAGCM-APD) is studied, and the influence of structural parameters on the device is analyzed. On the basis of PIN manufacturing process parameters, the structure of the device is further optimized, and the device is fabricated experimentally. The main work is as follows: 1) from the introduction of the most basic principle of APD devices, several kinds of common APD device structures are described respectively. Secondly, several important parameters affecting the photodetector are analyzed. 2) the structure parameters of InP-based SAGCM-APD are simulated, mainly the distribution of electric field, the change of multiplier factor and the simulation of the thickness of absorption layer. The structure parameters of SAGCM-APD are determined. 3) optimizing the epitaxial parameters of InP-based P-type In0.53Ga0.47AsMOCVD, optimizing the growth of In GaAs to obtain lattice-matched epitaxial layer. 4) fabricating InP-based SAGCM-APD devices and measuring the apparent photocurrent. Determine the state of avalanche breakdown.
【学位授予单位】：北京工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN312.7;TN215
本文编号：2434888
[Abstract]:Since the 20th century, with the increasing development of optical communication to high-speed and large-capacity transmission, the innovation of space detection, the development of high response speed, large bandwidth and high-gain receiver devices have also developed rapidly. In order to achieve the fabrication of such devices, avalanche photodiodes (APD) emerged as the times require, and become an indispensable and important part of the device. The main principle is that when the electric field in the depletion region accelerates the carrier to energy higher than the band-gap width, The carrier can collide with the lattice to produce additional secondary carriers. The APD device of general structure increases avalanche gain area on the basis of PIN structure. It not only has the characteristics of high responsivity and fast response speed of PIN device, but also has high gain inside. It is superior to the traditional PIN device in the reception of weak optical signal. In the field of long-wavelength communication, InP-based InGaAs detector has high responsivity in the wavelength of long-wavelength communication window. This paper is aimed at InP-based APD devices, mainly for absorption, gradual change, charge, etc. The multiplicative region separated APD device (SAGCM-APD) is studied, and the influence of structural parameters on the device is analyzed. On the basis of PIN manufacturing process parameters, the structure of the device is further optimized, and the device is fabricated experimentally. The main work is as follows: 1) from the introduction of the most basic principle of APD devices, several kinds of common APD device structures are described respectively. Secondly, several important parameters affecting the photodetector are analyzed. 2) the structure parameters of InP-based SAGCM-APD are simulated, mainly the distribution of electric field, the change of multiplier factor and the simulation of the thickness of absorption layer. The structure parameters of SAGCM-APD are determined. 3) optimizing the epitaxial parameters of InP-based P-type In0.53Ga0.47AsMOCVD, optimizing the growth of In GaAs to obtain lattice-matched epitaxial layer. 4) fabricating InP-based SAGCM-APD devices and measuring the apparent photocurrent. Determine the state of avalanche breakdown.
【学位授予单位】：北京工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN312.7;TN215
【参考文献】
相关期刊论文 前1条
1 杨志鸿,王树堂,曾靖,朱龙德,孙捷,夏彩虹,沈戎,归强;MOCVD生长的平面型InGaAs/InP PIN光电探测器件[J];红外与毫米波学报;1993年02期
，本文编号：2434888
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