新型碱性抛光液对300 mm TaN镀膜片CMP效果评估

发布时间：2019-03-07 19:03

【摘要】：TaN由于其良好的性能广泛用于布线铜与介质之间的阻挡层和黏附层。在对直径为300 mm的TaN镀膜片进行化学机械抛光(CMP)后,对比并分析了两种碱性抛光液对TaN去除速率、片内非均匀性、去除速率选择性和表面粗糙度的影响。结果表明,经过自主研发且不含氧化剂的碱性阻挡层抛光液抛光后,TaN的去除速率为40.1 nm/min,片内非均匀性为3.04%,介质、TaN与Cu的去除速率之比为1.69∶1.26∶1,中心、中间以及边缘的表面粗糙度分别为0.371,0.358和0.366 nm。与商用抛光液抛光结果相比,虽然采用自主研发的抛光液抛光的去除速率低,但片内非均匀性以及选择性均满足商用要求,且抛光后TaN表面粗糙度小,易清洗,无颗粒沾污。综合实验结果表明,自主研发的高性能碱性抛光液对TaN镀膜片具有良好的抛光效果,适合工业生产。
[Abstract]:TaN is widely used in barrier layer and adhesion layer between copper and medium because of its good performance. The effects of two kinds of alkaline polishing solution on TaN removal rate, in-chip heterogeneity, removal rate selectivity and surface roughness were compared and analyzed after chemical mechanical polishing (CMP) of TaN film with diameter of 300 mm. The results show that after polishing with self-developed alkaline barrier without oxidizer, the removal rate of TaN is 3.04% and the inhomogeneity of 40.1 nm/min, is 3.04%. The removal rate of TaN to Cu was 1.69 脳 1.26 nm., the surface roughness of the center, middle and edge was 0.371, 0.358 and 0.366 nm., respectively, and the surface roughness of the center, the middle and the edge were 0.371, 0.358 and 0.366 nm. respectively. Compared with the commercial polishing results, although the polishing solution developed by ourselves has a low removal rate, the in-chip non-uniformity and selectivity meet the commercial requirements, and the surface roughness of TaN after polishing is small, easy to clean and free of particle contamination. The experimental results show that the self-developed alkaline polishing solution has a good polishing effect on TaN film and is suitable for industrial production.
【作者单位】：河北工业大学电子信息工程学院;天津市电子材料与器件重点实验室;
【基金】：国家科技重大专项资助项目(2016ZX02301003-004-007) 河北省青年自然科学基金资助项目(F2015202267) 河北省研究生创新资助项目(220056) 天津市自然科学基金资助项目(16JCYBJC16100) 河北工业大学优秀青年科技创新基金资助项目(2015007)
【分类号】：TN405

【相似文献】