TFET单元库设计技术研究

发布时间：2019-03-13 15:46

【摘要】：TFET作为新型的低功耗器件,物理结构上采用源漏区非对称性掺杂,通过外加栅电压控制能带偏移,进而利用隧道击穿原理实现器件工作。与传统漂移扩散机制MOSFET器件相比,TFET器件的亚阈值斜率能够突破60m V/dec的限制,能够在较低电源电压下获得更大的电流开关比,从而实现超低功耗的目标。数字标准单元库是集成电路设计自动化的关键,是衔接前端设计与后端物理实现的桥梁。本文在基于传统MOSFET建库技术基础上,探究了TFET应用的研究方向,将TFET器件应用于数字标准单元库设计上。在已有技术的基础上,利用TFET器件模型,进行了相关研究,并在单元设计、版图规划和器件检测方面取得一定成果。基于传统工艺的MOSFET器件,进行了建库工作,包含库单元的原理图提取及优化,特性仿真和版图绘制,并利用已有的库单元,完成整体的建库流程,包含最重要的各类库文件生成及相应脚本文件编写。在单元设计中,针对单元的组合逻辑和时序逻辑电路进行深入研究,并结合TFET器件模型,对传输门逻辑对整体电路的设计影响进行分析,进而对比选择适合TFET器件的电路设计结构;另外,根据现有的模型兼容性问题,设计了测试触发器电路建立时间和保持时间的双时钟边沿测试电路。在版图规划方面,依据流片测试的版图模型并结合单元库设计方案,对单元版图进行了规划,并针对TFET器件的版图检测进行研究,修改了相应DRC检测规则使之能够针对TFET器件的特殊结构进行检测,其中包含针对一般类型的TFET器件,以及包含Pocket结构和Underlap结构的特殊类型TFET器件。
[Abstract]:As a new type of low-power device, TFET adopts asymmetric doping in the source-drain region in physical structure, and controls the energy band offset by the external gate voltage, and then realizes the device work by using the tunneling breakdown principle. Compared with the traditional drift-diffusion mechanism MOSFET devices, the sub-threshold slope of TFET devices can break through the limit of 60m V/dec and achieve higher current-switching ratio at lower power supply voltage, thus achieving the goal of ultra-low power consumption. Digital standard cell library is the key of IC design automation and the bridge between front-end design and back-end physical implementation. Based on the traditional MOSFET technology, this paper explores the research direction of TFET application, and applies the TFET device to the design of digital standard cell library. On the basis of the existing technology, the TFET device model is used to do some research, and some achievements in cell design, layout planning and device detection are obtained. Based on the traditional technology of MOSFET device, the library is built, which includes the extraction and optimization of the schematic diagram of the library unit, the simulation of the characteristics and the drawing of the layout, and using the existing library unit to complete the whole process of building the library. Contains the most important types of library file generation and the corresponding script file writing. In the unit design, the combinatorial logic and the sequential logic circuit of the unit are deeply studied, and the influence of the transmission gate logic on the design of the whole circuit is analyzed based on the TFET device model. Then the circuit design structure suitable for TFET devices is compared and selected. In addition, according to the compatibility problem of the existing model, a double clock edge test circuit is designed for setting up time and holding time of the trigger circuit. In the aspect of layout planning, according to the layout model of flow sheet test and the design scheme of cell library, the layout planning of unit layout is carried out, and the layout detection of TFET devices is studied. The corresponding DRC detection rules are modified to detect the special structure of TFET devices including TFET devices for general types and special types of TFET devices including Pocket structures and Underlap structures.
【学位授予单位】：哈尔滨工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386

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