一种CMOS高阶曲率补偿的带隙基准源电路的设计
发布时间：2019-03-20 18:38
【摘要】：为解决传统CMOS带隙基准电压源的温度系数较高的问题,采用高阶曲率补偿方法,提出了一种新型的带隙基准电压源,这种基准电压源的结构简单同时具有良好耗能性能,并且基准电压的温度系数得到一定的优化.利用NMOS管工作在亚阈值区域时漏电流和栅源电压的非线性特性,通过引入与基准电压温度系数成相反趋势的高阶补偿电流,降低基准电压的温度系数,以较少的硬件消耗为代价大幅提高了其温度特性,最后推导出补偿后的基准电压的计算公式.基于0.18μm BCD工艺进行仿真,结果表明:在-40℃~150℃温度范围内,基准电压的温度系数为6.94×10~(-6);电源电压VDD在2.5~5.0 V范围内,线性调整率为0.033%,电路在5 V电源电压为下工作电流为7.36μA;在典型工艺下(TT),电源抑制比(PSRR)为77.4 dB.基准电压的温度特性的理论分析结果与仿真结果吻合较好,通过高阶补偿后,带隙基准电压源表现出优良的性能,满足了带隙基准源的低功耗和低温漂的设计要求.
[Abstract]:In order to solve the problem of high temperature coefficient of traditional CMOS bandgap reference voltage source, a new type of bandgap reference voltage source is proposed by using high order curvature compensation method. The structure of this voltage reference source is simple and has good energy dissipation performance. And the temperature coefficient of the reference voltage is optimized to a certain extent. Based on the nonlinear characteristics of leakage current and gate source voltage in the sub-threshold region of the NMOS transistor, the temperature coefficient of the reference voltage is reduced by introducing the high-order compensation current, which is opposite to the reference voltage temperature coefficient, in order to reduce the temperature coefficient of the reference voltage. At the cost of less hardware consumption, the temperature characteristic is greatly improved. Finally, the calculation formula of the compensated reference voltage is deduced. The simulation results based on 0.18 渭 m BCD process show that the temperature coefficient of the reference voltage is 6.94 脳 10 ~ (- 6) in the temperature range of-40 鈩，
本文编号：2444502
[Abstract]:In order to solve the problem of high temperature coefficient of traditional CMOS bandgap reference voltage source, a new type of bandgap reference voltage source is proposed by using high order curvature compensation method. The structure of this voltage reference source is simple and has good energy dissipation performance. And the temperature coefficient of the reference voltage is optimized to a certain extent. Based on the nonlinear characteristics of leakage current and gate source voltage in the sub-threshold region of the NMOS transistor, the temperature coefficient of the reference voltage is reduced by introducing the high-order compensation current, which is opposite to the reference voltage temperature coefficient, in order to reduce the temperature coefficient of the reference voltage. At the cost of less hardware consumption, the temperature characteristic is greatly improved. Finally, the calculation formula of the compensated reference voltage is deduced. The simulation results based on 0.18 渭 m BCD process show that the temperature coefficient of the reference voltage is 6.94 脳 10 ~ (- 6) in the temperature range of-40 鈩，
本文编号：2444502
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