极紫外光刻动态气体锁抑制率的仿真研究
发布时间：2019-03-30 13:48
【摘要】：以清洁气体种类和流量以及污染气体放气率为变量,进行了单组分清洁气体的动态气体锁(DGL)流场仿真,并以混合清洁气体的体积比为变量进行了多组分清洁气体DGL流场仿真。仿真结果表明,DGL抑制率随清洁气体流量和分子量的增加而增加,但与污染气体放气率的变化无关。对于多组分清洁气体,当大分子量清洁气体的体积分数增加时,DGL抑制率近似不变。在实际工程中建议以氢气和氩气的混合气体作为DGL的清洁气体。当清洁气体流量为6.5Pa·m3·s-1时,约25%的清洁气体流入硅片室,DGL抑制率约为75%。该仿真结果为研制极紫外光刻机DGL提供了依据。
[Abstract]:The dynamic gas-locked (DGL) flow field of one-component clean gas is simulated by taking the type and flow rate of clean gas and the efflux rate of polluted gas as variables. The multi-component clean gas DGL flow field was simulated with the volume ratio of the mixed clean gas as a variable. The simulation results show that the inhibition rate of DGL increases with the increase of the flow rate and molecular weight of clean gas, but has nothing to do with the change of exhaust rate of polluted gas. For multi-component clean gas, when the volume fraction of high molecular weight clean gas increases, the inhibition rate of DGL is almost unchanged. In practice, it is suggested that the mixture of hydrogen and argon be used as the clean gas of DGL. When the flow rate of clean gas is 6.5Pa 路m ~ 3 路s ~ (- 1), about 25% of clean gas flows into the wafer chamber, and the inhibition rate of DGL is about 75%. The simulation results provide a basis for the development of ultra-ultraviolet lithography (DGL).
【作者单位】： 中国科学院光电研究院;北京市准分子激光工程技术研究中心;
【基金】：国家科技重大专项(2012ZX02702007)
【分类号】：TN305.7
[Abstract]:The dynamic gas-locked (DGL) flow field of one-component clean gas is simulated by taking the type and flow rate of clean gas and the efflux rate of polluted gas as variables. The multi-component clean gas DGL flow field was simulated with the volume ratio of the mixed clean gas as a variable. The simulation results show that the inhibition rate of DGL increases with the increase of the flow rate and molecular weight of clean gas, but has nothing to do with the change of exhaust rate of polluted gas. For multi-component clean gas, when the volume fraction of high molecular weight clean gas increases, the inhibition rate of DGL is almost unchanged. In practice, it is suggested that the mixture of hydrogen and argon be used as the clean gas of DGL. When the flow rate of clean gas is 6.5Pa 路m ~ 3 路s ~ (- 1), about 25% of clean gas flows into the wafer chamber, and the inhibition rate of DGL is about 75%. The simulation results provide a basis for the development of ultra-ultraviolet lithography (DGL).
【作者单位】： 中国科学院光电研究院;北京市准分子激光工程技术研究中心;
【基金】：国家科技重大专项(2012ZX02702007)
【分类号】：TN305.7
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