黑硅PIN四象限探测器研究
发布时间：2019-04-08 09:24
【摘要】：本文针对黑硅PIN四象限探测器的研制,对器件结构进行了优化设计。采用飞秒激光烧蚀和MEMS工艺制备两类黑硅材料,研究其表面形貌和光谱吸收特性,进而计算得到等效折射率和消光系数,进而对Si-PIN四象限探测器进行了仿真研究,分析和比较了两种探测器的伏安特性、暗电流、光谱响应、串扰以及响应时间等性能参数。最后,基于标准Si-PIN四象限探测器器件的制作流程,进行了黑硅Si-PIN四象限探测器原理性器件试制。取得的主要研究结论如下:(1)四象限探测器的串扰主要受载流子的扩散长度、载流子寿命、硅材料的吸收系数、隔离槽宽度、光敏面边长以及载流子的漂移速度等因素的影响;隔离槽宽度和光敏面边长对象限串扰的大小起决定性作用,象限串扰随着隔离槽宽度和光敏面边长的增加而呈指数减小。(2)飞秒激光制备的黑硅材料在不同激光功率、激光扫描速度以及气体氛围参数下,其性质也不尽相同。当激光功率为0.2 w而扫描速度为1 mm/s时,制备得到的黑硅材料尖锥结构完整、密度较大、分布较为均匀,同时光谱吸收较高可达到95%以上。在空气和氮气中制备的黑硅材料结构不够完整、密度较小;而在SF6气体中制备的黑硅材料形貌和分布等优于在空气和氮气中制备的黑硅材料,其近红外光谱吸收也明显得到改善。(3)MEMS微结构黑硅材料的性能与其表面微结构有很大关系,当微结构的尺寸达到纳米量级时,微结构层会形成一个共振腔,对1060 nm波长入射光有明显的减反作用;而当微结构的尺寸达到微米量级时,其对1060 nm波长入射光的减反作用有所削弱;通过离子注入,MEMS微结构黑硅材料的光谱吸收会得到不同程度的提高。(4)基于普通Si-PIN四象限探测器和黑硅Si-PIN四象限探测器的仿真研究表明,黑硅材料的引入能明显提高硅基探测器的响应波长范围和光谱响应度,在近红外波段的作用更为明显;但是,黑硅Si-PIN四象限探测器的暗电流有所增加,象限间串扰有所增加。(5)基于飞秒激光烧蚀和MEMS两种方法制备的黑硅材料,进行了黑硅Si-PIN四象限探测器原理性器件试制,到目前为止,已完成N面黑硅材料加工,正在进行后续工艺加工。
[Abstract]:In this paper, the structure of black silicon PIN four-quadrant detector is optimized. Two kinds of black silicon materials were prepared by femtosecond laser ablation and MEMS process, and their surface morphology and spectral absorption characteristics were studied. Then the equivalent refractive index and extinction coefficient were calculated, and then the Si-PIN four-quadrant detector was simulated. The voltage-ampere characteristics, dark current, spectral response, crosstalk and response time of the two detectors are analyzed and compared. Finally, based on the fabrication process of the standard Si-PIN four-quadrant detector device, the black silicon Si-PIN four-quadrant detector principle device is developed. The main conclusions obtained are as follows: (1) the crosstalk of the four-quadrant detector is mainly affected by the carrier diffusion length, carrier lifetime, the absorption coefficient of silicon material, and the width of the isolation slot. The influence of the length of the photosensitive surface and the drift velocity of the carrier; The width of isolation slot and the size of object-limited crosstalk on photosensitive surface length play a decisive role, and the quadrant crosstalk decreases exponentially with the increase of isolation slot width and length of photosensitive surface. (2) the black silicon materials prepared by femtosecond laser have different laser power. The properties of laser scanning velocity and gas atmosphere parameters are also different. When the laser power is 0.2w and the scanning speed is 1 mm/s, the sharp cone structure of the black silicon material is complete, the density is large, the distribution is more uniform, and the spectral absorption is higher than 95%. The structure of black silicon prepared in air and nitrogen is not complete and the density is small. However, the morphology and distribution of black silicon materials prepared in SF6 gas are better than those prepared in air and nitrogen. The near infrared absorption is also improved obviously. (3) the properties of MEMS microstructural black silicon material are related to its surface microstructure. When the size of the microstructure reaches nanoscale, a resonant cavity will be formed in the microstructure layer. The reaction of 1060 nm wavelength incident light was reduced obviously. However, when the size of the microstructure reaches the micron level, its reaction to the incident light at the wavelength of 1060 nm is weakened. Through ion implantation, the spectral absorption of MEMS microstructure black silicon material can be improved to some extent. (4) the simulation study based on ordinary Si-PIN four-quadrant detector and black silicon Si-PIN four-quadrant detector shows that: The introduction of black silicon material can obviously improve the response wavelength range and spectral responsivity of silicon-based detectors, especially in the near infrared band. However, the dark current of the black silicon Si-PIN four-quadrant detector increases and the crosstalk between the quadrants increases. (5) Black silicon materials based on femtosecond laser ablation and MEMS are fabricated. The principle device of black silicon Si-PIN four-quadrant detector has been developed. Up to now, the processing of N-plane black silicon material has been completed, and the follow-up process is being carried out.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN36
本文编号：2454470
[Abstract]:In this paper, the structure of black silicon PIN four-quadrant detector is optimized. Two kinds of black silicon materials were prepared by femtosecond laser ablation and MEMS process, and their surface morphology and spectral absorption characteristics were studied. Then the equivalent refractive index and extinction coefficient were calculated, and then the Si-PIN four-quadrant detector was simulated. The voltage-ampere characteristics, dark current, spectral response, crosstalk and response time of the two detectors are analyzed and compared. Finally, based on the fabrication process of the standard Si-PIN four-quadrant detector device, the black silicon Si-PIN four-quadrant detector principle device is developed. The main conclusions obtained are as follows: (1) the crosstalk of the four-quadrant detector is mainly affected by the carrier diffusion length, carrier lifetime, the absorption coefficient of silicon material, and the width of the isolation slot. The influence of the length of the photosensitive surface and the drift velocity of the carrier; The width of isolation slot and the size of object-limited crosstalk on photosensitive surface length play a decisive role, and the quadrant crosstalk decreases exponentially with the increase of isolation slot width and length of photosensitive surface. (2) the black silicon materials prepared by femtosecond laser have different laser power. The properties of laser scanning velocity and gas atmosphere parameters are also different. When the laser power is 0.2w and the scanning speed is 1 mm/s, the sharp cone structure of the black silicon material is complete, the density is large, the distribution is more uniform, and the spectral absorption is higher than 95%. The structure of black silicon prepared in air and nitrogen is not complete and the density is small. However, the morphology and distribution of black silicon materials prepared in SF6 gas are better than those prepared in air and nitrogen. The near infrared absorption is also improved obviously. (3) the properties of MEMS microstructural black silicon material are related to its surface microstructure. When the size of the microstructure reaches nanoscale, a resonant cavity will be formed in the microstructure layer. The reaction of 1060 nm wavelength incident light was reduced obviously. However, when the size of the microstructure reaches the micron level, its reaction to the incident light at the wavelength of 1060 nm is weakened. Through ion implantation, the spectral absorption of MEMS microstructure black silicon material can be improved to some extent. (4) the simulation study based on ordinary Si-PIN four-quadrant detector and black silicon Si-PIN four-quadrant detector shows that: The introduction of black silicon material can obviously improve the response wavelength range and spectral responsivity of silicon-based detectors, especially in the near infrared band. However, the dark current of the black silicon Si-PIN four-quadrant detector increases and the crosstalk between the quadrants increases. (5) Black silicon materials based on femtosecond laser ablation and MEMS are fabricated. The principle device of black silicon Si-PIN four-quadrant detector has been developed. Up to now, the processing of N-plane black silicon material has been completed, and the follow-up process is being carried out.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN36
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