半导体激光器封装及甲酸气体回流烧结技术

发布时间：2019-04-12 11:05

【摘要】：半导体激光器自其诞生以来就备受关注,它具有体积小、重量轻、寿命长、转换效率高等优点,无论是在军事领域还是在民用领域的应用上它都显示出了强劲的势头。但是从目前国内形势来看,决定着半导体激光器寿命及可靠性的关键技术——封装技术,与国外还有很大的差距。而封装中的主要工艺管芯的烧结水平对半导体激光器的性能有重要影响。在管芯的烧结中最困难的是烧焊过程中如何去除焊料层表面的氧化膜,从而使焊料、芯片以及热沉达到最佳的浸润状态。本文对半导体激光器的封装类型和封装工艺做了简要的介绍,并且研究了银层和金层对In焊料性能的影响以及焊料空洞、金属间化合物对焊料性能的影响。在对文献调研的基础上,本文详细介绍了甲酸气体回流烧结技术的原理及具体烧结过程,并进行了大量的实验,从以下几个方面研究了甲酸气体回流烧结技术对焊料性能的影响。(1)采用Si片作为基底并在其上进行了In焊料的制备,对制备样品进行甲酸气体回流烧结。通过XRD图谱分析了甲酸气体和氧化铟不同阶段的具体反应过程,证实了合理设定烧结曲线的反应温度和分解温度甲酸气体就能够有效去除焊料表面的氧化膜。(2)通过两种烧结方式的SEM图像对比发现,甲酸气体回流烧结焊料的颗粒均匀性明显好于在空气中直接烧结的焊料,而对焊料表面的EDS检测结果也进一步证实了甲酸气体与氧化铟进行了反应。(3)通过对甲酸气体回流烧结的焊料和直接在空气中烧结的焊料的剪切强度的测量,讨论了甲酸气体回流烧结技术对焊料浸润性的影响。(4)通过对直接滴入甲酸溶液烧结的In焊料进行研究,观察了样品的SEM图像并分析了样品的XRD图谱得出结论:甲酸溶液能够去除焊料表面的氧化膜,但是会造成溶液残留,降低了焊料的性能。
[Abstract]:Semiconductor laser has attracted much attention since its birth. It has the advantages of small size, light weight, long life and high conversion efficiency. It has shown a strong momentum in both military and civilian applications. However, from the domestic situation, packaging technology, the key technology to determine the lifetime and reliability of semiconductor lasers, is still far from that of other countries. The sintering level of the main process cores in packaging has an important effect on the performance of semiconductor lasers. The most difficult problem in the sintering process is how to remove the oxide film on the surface of the solder layer, so that the solder, chip and heat sink can reach the optimal infiltration state. The packaging type and packaging technology of semiconductor laser are briefly introduced in this paper. The effects of silver layer and gold layer on the properties of In solder and the effects of solder voids and intermetallic compounds on the solder properties are also studied. On the basis of literature investigation, the principle and specific sintering process of reflux sintering of formic acid gas are introduced in detail, and a large number of experiments are carried out. The influence of formic acid gas refluxing sintering technology on solder properties was studied in the following aspects. (1) In solder was prepared by using Si as substrate, and formic acid gas refluxing sintering was carried out on the prepared samples. The specific reaction processes of formic acid gas and indium oxide at different stages were analyzed by XRD spectra. It is proved that the oxidation film on the solder surface can be effectively removed by setting the reaction temperature and decomposition temperature of sintering curve properly. (2) by comparing the SEM images of the two sintering methods, it is found that the oxidation film on the solder surface can be removed effectively by formic acid gas. The particle uniformity of formic acid gas refluxing sintering solder is better than that of direct sintering solder in air. The EDS results on the surface of the solder further confirmed the reaction of formic acid gas with indium oxide. (3) the shear strength of the solder sintered with formic acid gas and sintered directly in the air was measured by means of the measurement of the shear strength of the solder sintered with formic acid gas refluxing and sintered directly in the air. The influence of formic acid gas refluxing sintering technology on the wettability of solder was discussed. (4) the In solder sintered by dropping directly into formic acid solution was studied. The SEM images of the samples were observed and the XRD profiles of the samples were analyzed. It was concluded that formic acid solution could remove the oxide film on the surface of the solder, but it would cause the residue of the solution and decrease the performance of the solder.
【学位授予单位】：郑州大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN248.4

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