双栅隧穿场效应晶体管的模型研究

发布时间：2019-04-22 16:14

【摘要】：MOS晶体管是当今世界的主流,它具有很好的电学特性,但是其物理尺寸已接近极限而且功耗大等问题日益突出。为了适应未来集成电路发展的需要,新型的场效应晶体管如铁电场效应晶体管(Mental-Ferroelectric-Semiconductor Field-Effect Transistor),双栅隧穿场效应晶体管(Double-gate Tunneling Field-Effect Transistor),鳍式场效应晶体管(Fin Field-Effect Transistor)最近几年获得了广泛的关注与研究。其中,双栅隧穿场效应晶体管具有很多的优点,例如亚阈值摆幅低、功耗小、与CMOS工艺有很好的兼容性等,因此被认为是一个MOS晶体管的很好的替代者。双栅隧穿场效应晶体管是一种新型的晶体管。有别于至今电路普遍采用的MOS晶体管的源区、漏区掺杂类型相同的方法,双栅隧穿场效应晶体管的源、漏区采用了掺杂类型相反的方式,从而致使其工作时在栅极电压的作用下源区与沟道之间的界面发生了不同于MOS晶体管工作机制的电荷隧穿现象,导致了漏电流的产生。由于特殊的漏电流产生机制,隧穿场效应晶体管的亚阈值摆幅降低到60 mV/dec以下,功耗得到了有效地减少,同时也面临着工作时开态电流较小的问题。为了解决上述问题,在本论文中我们利用计算机软件TCAD-ATLAS通过改变双栅隧穿场效应晶体管的组成材料模拟出了GaSbAs同质结双栅隧穿效应晶体管、AlxGa1-xSb/Ga As异质结双栅隧穿场效应晶体管、SixGe1-x/Inx Ga1-x P异质结双栅隧穿场效应晶体管的物理结构,并对其进行了仿真得到一些器件性能参数。通过比较,这三种不同类型的双栅隧穿场效应晶体管在模拟中都展现出非常好的器件性能,例如较大的开态电流、理想的电流开关比、较低的亚阈值摆幅等。其中,在AlxGa1-x Sb/GaAs异质结、SixGe1-x/Inx Ga1-xP异质结双栅隧穿场效应晶体管中,我们发现改变形成异质结的材料中的摩尔分数x的值能够引起其器件性能的改变。所以我们通过优化和筛选材料中摩尔分数x的值,发现Al0.05Ga0.95Sb/GaAs(即铝的摩尔分数x为0.05)异质结、Si0.9Ge0.1/In0.01Ga0.99P(即Si与In的摩尔分数x分别为0.9与0.01)异质结能使双栅隧穿场效应晶体管的开态电流增加,电流开关比提高,达到了优化器件性能的目的。
[Abstract]:MOS transistor is the mainstream of the world today, it has good electrical properties, but its physical size is close to the limit and the problem of large power consumption is becoming more and more prominent. In order to meet the needs of future integrated circuit development, new field effect transistors such as ferroelectric field effect transistor (Mental-Ferroelectric-Semiconductor Field-Effect Transistor), double gate tunneling field effect transistor (Double-gate Tunneling Field-Effect Transistor),) have been developed. Fin field effect transistor (Fin Field-Effect Transistor) has received extensive attention and research in recent years. Among them, double-gate tunneling FET has many advantages, such as low sub-threshold swing, low power consumption and good compatibility with CMOS process, so it is considered as a good substitute for MOS transistor. Double gate tunneling field effect transistor (TFET) is a new type of transistor. Different from the source region of MOS transistor and the same method of doping type in leakage region, the source of double-gate tunneling field-effect transistor and the leakage region of double-gate tunneling field effect transistor adopt the opposite mode of doping type, which is different from the source region of double-gate tunneling FET. Thus, under the action of gate voltage, the interface between the source region and the channel has a charge tunneling phenomenon different from that of the MOS transistor, which leads to the generation of leakage current. Due to the special leakage current generation mechanism, the sub-threshold swing of TFET is reduced to less than 60 mV/dec, and the power consumption is reduced effectively. At the same time, the problem of small on-state current is also faced with. In order to solve the above problems, we use the computer software TCAD-ATLAS to simulate the GaSbAs homogenous junction double gate tunneling effect transistor by changing the composition of the dual gate tunneling field effect transistor. The physical structures of AlxGa1-xSb/Ga As heterojunction double gate tunneling field effect transistor and SixGe1-x/Inx Ga1-x P heterojunction double gate tunneling field effect transistor are simulated and some performance parameters of the device are obtained. By comparison, the three different types of double-gate tunneling field-effect transistors show very good performance in simulation, such as large open-state current, ideal current-switching ratio, lower sub-threshold swing, and so on. Among them, in AlxGa1-x Sb/GaAs heterojunction and SixGe1-x/Inx Ga1-xP heterojunction double gate tunneling field effect transistor, we found that changing the molar fraction x of the material forming heterojunction can cause the change of device performance. So by optimizing and screening the molar fraction x in the material, we found that Al0.05Ga0.95Sb/GaAs (that is, the molar fraction of aluminum x is 0.05) heterojunction. Si0.9Ge0.1/In0.01Ga0.99P (the molar fraction x of Si and In is 0.9 and 0.01, respectively) heterojunction can increase the open-state current and the current-switching ratio of the double-gate tunneling field-effect transistor, thus achieving the purpose of optimizing the performance of the device.
【学位授予单位】：湘潭大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386

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